Renal involvement in psychological eating disorders

Psychological eating disorders--anorexia nervosa (AN), bulimia nervosa (BN), binge eating disorder--are an increasing public health problem with severe clinical manifestations: hypothermia, hypotension, electrolyte imbalance, endocrine disorders and kidney failure; they are of interest to nephrologists, but pathophysiological mechanisms in determining the renal involvement are still unclear. We describe pathophysiology, histological features and clinical manifestations of the most frequent psychological eating disorders: AN and BN. Regarding AN, we analyze the recent literature, and identify 3 principal pathways towards renal involvement: chronic dehydration-hypokalemia, nephrocalcinosis and chronic rhabdomyolysis. Regarding BN, we describe the correlation between obesity and many proinflammatory cytokines, chemokines, growth factors and adipokines, having potential metabolic and hemodynamic effects on the kidney and an important role in the pathogenesis of obesity-related renal injury, independently of hypertension and diabetes

incidence of hepatitis c virus infection in patients with chronic kidney disease on conservative therapy

Summary Hepatitis C virus (HCV) infection is a never-ending public health problem. Many studies have investigated the incidence of HCV infection among dialysis patients, but there have only been a few epidemiological studies in renal conservative therapy. We studied 320 subjects with pre-dialysis chronic kidney disease living in Sicily, Italy. The incidence of HCV infection was 6.25%. In Europe, incidence ranges from 0.2% to 3.5%. It appears that the incidence of HCV infection is higher in the studied patient population than in the population as a whole

Study of atmospheric muon interactions in Si nanoscale devices

International audienceIn this paper the impact of the muon radial ionization profile on Single-Event Upset (SEU) sensitivity for nanoscale technologies is investigated with simulations and experimental measurements. The physical model used in the simulation framework is compared with experimental measurements of the charge deposit induced by atmospheric particles on a CCD pixel array. This scientific instrument is used to monitor the atmospheric muons, and allows to investigate the charge deposition induced by muon of micrometric sensitive volumes (i.e. the CCD pixel). Atmospheric and underground sites are considered for monitoring pixel-charge events and the combined analysis of the data is used to discriminate muons from other particles. 3D descriptions of muon tracks were simulated with radiation transport code Geant4, and coupled with Single Event Effect (SEE) simulation based on multi-physics approaches (MUSCA SEP3) to investigate the SEU cross-section and Soft Error Rate (SER) trends as function of technological downscaling. SER trends are analyzed for bulk technologies, from 65 to 14 nm integration nodes, in both ground and avionic environments. Results show that for technologies whose characteristic lengths are greater than 50 nm, it is not necessary to consider radial energy deposit structure of muon in SEE assessment. At ground, downscaling of the technological node induces an increase in the SEU susceptibility to cosmic ray showers, mainly because of muons. For nanoscale devices operating at avionic altitude, the muon contribution to the SER is very weak in comparison of the proton and neutron contributions

Effect of the Radial Ionization Profile of Proton on SEU Sensitivity of Nanoscale SRAMs

International audienceThis paper investigates the impact of the radial ionization profile of proton on SEU sensitivity for nanoscale devices. Intrinsic radial track structures of energy deposition of protons (from 0.5 to 2 MeV) in a silicon box with 2 μm of Si over-layer and a 100-nm silicon film were investigated. The orders of magnitude of the radial deposition is around 200 to 300 nm. Approaches based on punctual or average depositions induce a drift increasing for nanoscale volumes. Realistic energy deposition databases were developed thanks to GEANT4 and coupled with MUSCA SEP3 to perform SEU cross sections and SER estimations. Calculations applied to SOI and bulk technologies (65 and 45-nm) were conducted and compared with experimental results. Calculations are consistent with experiments, despite some drifts. Analyses demonstrate the necessity to consider the 3D morphology description in SEE modeling for nanoscale technologies, more particularly for SOI technologies