Quantum interference in nanometric devices: ballistic transport across arrays of T-shaped quantum wires

We propose that the recently realized T-shaped semiconductor quantum wires (T-wires) could be exploited as three-terminal quantum interference devices. T-wires are formed by intersecting two quantum wells (QWs). By use of a scattering matrix approach and the Landauer-B\"uttiker theory, we calculate the conductance for ballistic transport in the parent QWs and across the wire region as a function of the injection energy. We show that different conductance profiles can be selected by tailoring the widths of the QWs and/or combining more wires on the scale of the Fermi wavelength. Finally, we discuss the possibility of obtaining spin-dependent conductance of ballistic holes in the same structures.Comment: To appear in the 09/15/97 issue of Appl. Phys. Lett. (9 pages in REVTEX + 2 figures in postscript

First Principles Calculations of Charge and Spin Density Waves of sqr3-Adsorbates on Semiconductors

We present ab-initio electronic structure results on the surface of sqr3 adsorbates. In particular, we address the issue of metal-insulator instabilities, charge-density-waves (CDWs) or spin-density-waves (SDWs), driven by partly filled surface states and their 2D Fermi surface, and/or by the onset of magnetic instabilities. The focus is both on the newly discovered commensurate CDW transitions in the Pb/Ge(111) and Sn/Ge(111) structures, and on the puzzling semiconducting behavior of the Pb/Ge(111), K/Si(111):B and SiC(0001) surfaces. In all cases, the main factor driving the instability appears to be an extremely narrow surface state band. We have carried out so far preliminary calculations for the Si/Si(111) surface, chosen as our model system, within the gradient corrected local density (LDA+GC) and local spin density (LSD+GC) approximations, with the aim of understanding the possible interplay between 2D Fermi surface and electron correlations in the surface + adsorbate system. Our spin- unrestricted results show that the sqr3 paramagnetic surface is unstable towards a commensurate SDW with periodicity 3x3 and magnetization 1/3.Comment: 9 pages, 4 Postscript figures, to be published in Surf. Sc

Raman signatures of classical and quantum phases in coupled dots: A theoretical prediction

We study electron molecules in realistic vertically coupled quantum dots in a strong magnetic field. Computing the energy spectrum, pair correlation functions, and dynamical form factor as a function of inter-dot coupling via diagonalization of the many-body Hamiltonian, we identify structural transitions between different phases, some of which do not have a classical counterpart. The calculated Raman cross section shows how such phases can be experimentally singled out.Comment: 9 pages, 2 postscript figures, 1 colour postscript figure, Latex 2e, Europhysics Letters style and epsfig macros. Submitted to Europhysics Letter

Valence band spectroscopy in V-grooved quantum wires

We present a combined theoretical and experimental study of the anisotropy in the optical absorption of V-shaped quantum wires. By means of realistic band structure calculations for these structures, we show that detailed information on the heavy- and light-hole states can be singled out from the anisotropy spectra {\em independently of the electron confinement}, thus allowing accurate valence band spectroscopy.Comment: To be published in Appl. Phys. Lett. (8 pages in REVTeX, two postscipt figures

The mechanism for the 3 x 3 distortion of Sn/ge (111)

We show that two distinct $3 \times 3$ ground states, one nonmagnetic, metallic, and distorted, the other magnetic, semimetallic (or insulating) and undistorted, compete in $\alpha$-phase adsorbates on semiconductor (111) surfaces. In Sn/Ge(111), LSDA/GGA calculations indicate, in agreement with experiment, that the distorted metallic ground state prevails. The reason for stability of this state is analysed, and is traced to a sort of bond density wave, specifically a modulation of the antibonding state filling between the adatom and a Ge-Ge bond directly underneath

I mercati della capacit\ue0 tra teoria economica e prassi regolatoria

La teoria economica suggerisce che alcune imperfezioni dei mercati dell\u2019energia elettrica possono determinare un\u2019insufficiente remunerazione del capitale investito in capacit\ue0 e livelli inefficienti di entrata ed uscita dal mercato. Si tratta del cosiddetto problema del missing money che pu\uf2 essere affrontato con mercati della capacit\ue0. Nei mercati reali il problema del missing money pu\uf2 essere associato sia a condizioni di deficit di potenza che di eccesso di potenza. Conseguentemente, i mercati della capacit\ue0 possono costituire solo una parte della soluzione. Per avere livelli efficienti di entrata e di uscita c\u2019\ue8 bisogno di una regolazione complessiva dei mercati dell\u2019energia, della riserva e della capacit\ue0, che sia anche coerente con lo stato del sistema elettrico