243 research outputs found

    Elimination of unoccupied state summations in it ab initio self-energy calculations for large supercells

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    We present a new method for the computation of self-energy corrections in large supercells. It eliminates the explicit summation over unoccupied states, and uses an iterative scheme based on an expansion of the Green's function around a set of reference energies. This improves the scaling of the computational time from the fourth to the third power of the number of atoms for both the inverse dielectric matrix and the self-energy, yielding improved efficiency for 8 or more silicon atoms per unit cell

    Density-functional theory of polar insulators

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    We examine the density-functional theory of macroscopic insulators, obtained in the large-cluster limit or under periodic boundary conditions. For polar crystals, we find that the two procedures are not equivalent. In a large-cluster case, the exact exchange-correlation potential acquires a homogeneous ``electric field'' which is absent from the usual local approximations, and the Kohn-Sham electronic system becomes metallic. With periodic boundary conditions, such a field is forbidden, and the polarization deduced from Kohn-Sham wavefunctions is incorrect even if the exact functional is used

    Efficient total energy calculations from self-energy models

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    We propose a new method for calculating total energies of systems of interacting electrons, which requires little more computational resources than standard density-functional theories. The total energy is calculated within the framework of many-body perturbation theory by using an efficient model of the self-energy, that nevertheless retains the main features of the exact operator. The method shows promising performance when tested against quantum Monte Carlo results for the linear response of the homogeneous electron gas and structural properties of bulk silicon

    Ab initio formulation of the four-point conductance of interacting electronic systems

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    We derive an expression for the four-point conductance of a general quantum junction in terms of the density response function. Our formulation allows us to show that the four-point conductance of an interacting electronic system possessing either a geometrical constriction and/or an opaque barrier becomes identical to the macroscopically measurable two-point conductance. Within time-dependent density-functional theory the formulation leads to a direct identification of the functional form of the exchange-correlation kernel that is important for the conductance. We demonstrate the practical implementation of our formula for a metal-vacuum-metal interface

    The long-wavelength behaviour of the exchange-correlation kernel in the Kohn-Sham theory of periodic systems

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    The polarization-dependence of the exchange-correlation (XC) energy functional of periodic insulators within Kohn-Sham (KS) density-functional theory requires a O(1/q2){\cal O} (1/q^2) divergence in the XC kernel for small vectors q. This behaviour, exemplified for a one-dimensional model semiconductor, is also observed when an insulator happens to be described as a KS metal, or vice-versa. Although it can occur in the exchange-only kernel, it is not found in the usual local, semi-local or even non-local approximations to KS theory. We also show that the test-charge and electronic definitions of the macroscopic dielectric constant differ from one another in exact KS theory, but are equivalent in the above-mentioned approximations

    Comment on "Quantum Confinement and Optical Gaps in Si Nanocrystals"

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    We show that the method used by Ogut, Chelikowsky and Louie (Phys. Rev. Lett. 79, 1770 (1997)) to calculate the optical gap of Si nanocrystals omits an electron-hole polarization energy. When this contribution is taken into account, the corrected optical gap is in excellent agreement with semi-empirical pseudopotential calculations.Comment: 3 pages, 1 figur

    The charge density of semiconductors in the GW approximation

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    We present a method to calculate the electronic charge density of periodic solids in the GW approximation, using the space-time method. We investigate for the examples of silicon and germanium to what extent the GW approximation is charge-conserving and how the charge density compares with experimental values. We find that the GW charge density is close to experiment and charge is practically conserved. We also discuss how using a Hartree potential consistent with the level of approximation affects the quasi-particle energies and find that the common simplification of using the LDA Hartree potential is a very well justified

    Diagrammatic self-energy approximations and the total particle number

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    There is increasing interest in many-body perturbation theory as a practical tool for the calculation of ground-state properties. As a consequence, unambiguous sum rules such as the conservation of particle number under the influence of the Coulomb interaction have acquired an importance that did not exist for calculations of excited-state properties. In this paper we obtain a rigorous, simple relation whose fulfilment guarantees particle-number conservation in a given diagrammatic self-energy approximation. Hedin's G(0)W(0) approximation does not satisfy this relation and hence violates the particle-number sum rule. Very precise calculations for the homogeneous electron gas and a model inhomogeneous electron system allow the extent of the nonconservation to be estimated

    GW approximations and vertex corrections on the Keldysh time-loop contour: application for model systems at equilibrium

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    We provide the formal extension of Hedin's GW equations for single-particle Green's functions with electron-electron interaction onto the Keldysh time-loop contour. We show an application of our formalism to the plasmon model of a core electron within the plasmon-pole approximation. We study in detail the diagrammatic perturbation expansion of the core-electron/plasmon coupling on the spectral functions of the so-called S-model which provides an exact solution, concentrating especially on the effects of self-consistency and vertex corrections on the GW self-energy. For the S-model, self-consistency is essential for GW-like calculations to obtain the full spectral information. The second- order exchange diagram (i.e. a vertex correction) is crucial to obtain a better spectral description of the plasmon peak and side-band peaks in comparison to GW-like calculations. However, the vertex corrections are well reproduced within a non-self-consistent calculation. We also consider conventional equilibrium GW calculations for the pure jellium model. We find that with no second-order vertex correction, we cannot obtain the full set of plasmon side-band peaks. Finally, we address the issues of formal connection for the Dyson equations of the time-ordered Green's function and the Keldysh Green's functions at equilibrium in the cases of zero and finite temperature.Comment: Published in PRB November 22 201

    Spectra and total energies from self-consistent many-body perturbation theory

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    With the aim of identifying universal trends, we compare fully self-consistent electronic spectra and total energies obtained from the GW approximation with those from an extended GW Gamma scheme that includes a nontrivial vertex function and the fundamentally distinct Bethe-Goldstone approach based on the T matrix. The self-consistent Green's function G, as derived from Dyson's equation, is used not only in the self-energy but also to construct the screened interaction W for a model system. For all approximations we observe a similar deterioration of the spectrum, which is not removed by vertex corrections. In particular, satellite peaks are systematically broadened and move closer to the chemical potential. The corresponding total energies are universally raised, independent of the system parameters. Our results, therefore, suggest that any improvement in total energy due to self-consistency, such as for the electron gas in the GW approximation, may be fortuitous. [S0163-1829 (98)05040-1]
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