Review of the Supply of and Demand for Further Education in Scotland

These documents provide are an Executive Summary and Full Report of the background to, methodology for, and overall conclusions and recommendations of a review of the supply of and demand for Further Education (FE) provision in Scottish Further Education colleges in 2000. The review was commissioned by the Scottish Further Education Funding Council (SFEFC), and carried out between November 1999 and June 2000 by a team of researchers drawn from the Scottish Further Education Unit (SFEU), the Centre for Research in Lifelong Learning, Glasgow Caledonian University/University of Stirling, and the Applied Statistics Group, Napier University

1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates

Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare

Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

Mid-infrared intersubband absorption from p-Ge quantum wells with Si0.5Ge0.5 barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm

Mid-Infrared Intersubband Absorption from P-Ge Quantum Wells on Si

Mid-infrared intersubband absorption from p-Ge quantum wells with Si0.5Ge0.5 barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red spectroscopy measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm

Review of the Supply of and Demand for Further Education in Scotland

These documents provide are an Executive Summary and Full Report of the background to, methodology for, and overall conclusions and recommendations of a review of the supply of and demand for Further Education (FE) provision in Scottish Further Education colleges in 2000. The review was commissioned by the Scottish Further Education Funding Council (SFEFC), and carried out between November 1999 and June 2000 by a team of researchers drawn from the Scottish Further Education Unit (SFEU), the Centre for Research in Lifelong Learning, Glasgow Caledonian University/University of Stirling, and the Applied Statistics Group, Napier University

Pepper-pot emittance measurement of laser-plasma wakefield accelerated electrons

The transverse emittance is an important parameter governing the brightness of an electron beam. Here we present the first pepper-pot measurement of the transverse emittance for a mono-energetic electron beam from a laser-plasma wakefield accelerator, carried out on the Advanced Laser-Plasma High Energy Accelerators towards X-Rays (ALPHA-X) beam line. Mono-energetic electrons are passed through an array of 52 mu m diameter holes in a tungsten mask. The pepper-pot results set an upper limit for the normalised emittance at 5.5 +/- 1 pi mm mrad for an 82 MeV beam

Mid-Infrared Plasmonic Platform Based on n-Doped Ge-on-Si: Molecular Sensing with Germanium Nano-Antennas on Si

CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nanoantennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared

Heavily-doped Germanium on Silicon with Activated Doping Exceeding 1020 cm−3 as an Alternative to Gold for Mid-infrared Plasmonics

Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser thermal annealing to demonstrate activated doping levels >1020 cm-3 which allows most of the 3 to 20 μm mid-infrared sensing window to be covered with enhancements comparable to gold plasmonics

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies