Fabrication of small laterally patterned multiple quantum wells

A technique of high voltage electron beam lithography and BCI_3/Ar reactive ion etching for laterally patterning GaAs/Al_0_3 Ga_(0.7) As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated

Detection of DNA and Poly-L-Lysine using CVD Graphene-channel FET Biosensors

A graphene channel field-effect biosensor is demonstrated for detecting the binding of double-stranded DNA and poly-l-lysine. Sensors consist of CVD graphene transferred using a clean, etchant-free transfer method. The presence of DNA and poly-l-lysine are detected by the conductance change of the graphene transistor. A readily measured shift in the Dirac Voltage (the voltage at which the graphenes resistance peaks) is observed after the graphene channel is exposed to solutions containing DNA or poly-l-lysine. The Dirac voltage shift is attributed to the binding/unbinding of charged molecules on the graphene surface. The polarity of the response changes to positive direction with poly-l-lysine and negative direction with DNA. This response results in detection limits of 8 pM for 48.5 kbp DNA and 11 pM for poly-l-lysine. The biosensors are easy to fabricate, reusable and are promising as sensors of a wide variety of charged biomolecule

Low-power photothermal self-oscillation of bimetallic nanowires

We investigate the nonlinear mechanics of a bimetallic, optically absorbing SiN-Nb nanowire in the presence of incident laser light and a reflecting Si mirror. Situated in a standing wave of optical intensity and subject to photothermal forces, the nanowire undergoes self-induced oscillations at low incident light thresholds of $<1\, \rm{\mu W}$ due to engineered strong temperature-position ($T$-$z$) coupling. Along with inducing self-oscillation, laser light causes large changes to the mechanical resonant frequency $\omega_0$ and equilibrium position $z_0$ that cannot be neglected. We present experimental results and a theoretical model for the motion under laser illumination. In the model, we solve the governing nonlinear differential equations by perturbative means to show that self-oscillation amplitude is set by the competing effects of direct $T$-$z$ coupling and $2\omega_0$ parametric excitation due to $T$-$\omega_0$ coupling. We then study the linearized equations of motion to show that the optimal thermal time constant $\tau$ for photothermal feedback is $\tau \to \infty$ rather than the widely reported $\omega_0 \tau = 1$. Lastly, we demonstrate photothermal quality factor ($Q$) enhancement of driven motion as a means to counteract air damping. Understanding photothermal effects on micromechanical devices, as well as nonlinear aspects of optics-based motion detection, can enable new device applications as oscillators or other electronic elements with smaller device footprints and less stringent ambient vacuum requirements.Comment: New references adde

Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage

We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl2 gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov–Bohm oscillations are seen in rings defined by this controlled etch-damage patterning. This patterning technique holds promise for creating one-dimensional conducting wires of even smaller sizes

Dissipation in nanocrystalline-diamond nanomechanical resonators

We have measured the dissipation and frequency of nanocrystalline-diamond nanomechanical resonators with resonant frequencies between 13.7 MHz and 157.3 MHz, over a temperature range of 1.4–274 K. Using both magnetomotive network analysis and a time-domain ring-down technique, we have found the dissipation in this material to have a temperature dependence roughly following T^(0.2), with Q^(–1) ≈ 10^(–4) at low temperatures. The frequency dependence of a large dissipation feature at ~35–55 K is consistent with thermal activation over a 0.02 eV barrier with an attempt frequency of 10 GHz

Response of parametrically-driven nonlinear coupled oscillators with application to micro- and nanomechanical resonator arrays

The response of a coupled array of nonlinear oscillators to parametric excitation is calculated in the weak nonlinear limit using secular perturbation theory. Exact results for small arrays of oscillators are used to guide the analysis of the numerical integration of the model equations of motion for large arrays. The results provide a qualitative explanation for a recent experiment [Buks and Roukes, cond-mat/0008211, to appear in J. MEMS (2002)] involving a parametrically-excited micromechanical resonator array. Future experiments are suggested that could provide quantitative tests of the theoretical predictions.Comment: 27 pages (in preprint format), 8 figure