InAs-AlSb quantum wells in tilted magnetic fields

InAs-AlSb quantum wells are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. Using the coincidence method we find for magnetic fields up to 28 T that the spin splitting can be as large as 5 times the Landau splitting. We find a value of the g-factor of about 13. For small even-integer filling factors the corresponding minima in the Shubnikov-de Haas oscillations cannot be tuned into maxima for arbitrary tilt angles. This indicates the anti-crossing of neighboring Landau and spin levels. Furthermore we find for particular tilt angles a crossover from even-integer dominated Shubnikov-de Haas minima to odd-integer minima as a function of magnetic field

Zero-field spin splitting in InAs-AlSb quantum wells revisited

We present magnetotransport experiments on high-quality InAs-AlSb quantum wells that show a perfectly clean single-period Shubnikov-de Haas oscillation down to very low magnetic fields. In contrast to theoretical expectations based on an asymmetry induced zero-field spin splitting, no beating effect is observed. The carrier density has been changed by the persistent photo conductivity effect as well as via the application of hydrostatic pressure in order to influence the electric field at the interface of the electron gas. Still no indication of spin splitting at zero magnetic field was observed in spite of highly resolved Shubnikov- de Haas oscillations up to filling factors of 200. This surprising and unexpected result is discussed in view of other recently published data.Comment: 4 pages, 3 figures, submitted to Phys. Rev.

Magnetically-controlled impurities in quantum wires with strong Rashba coupling

We investigate the effect of strong spin-orbit interaction on the electronic transport through non-magnetic impurities in one-dimensional systems. When a perpendicular magnetic field is applied, the electron spin polarization becomes momentum-dependent and spin-flip scattering appears, to first order in the applied field, in addition to the usual potential scattering. We analyze a situation in which, by tuning the Fermi level and the Rashba coupling, the magnetic field can suppress the potential scattering. This mechanism should give rise to a significant negative magnetoresistance in the limit of large barriers.Comment: 4 pages, 2 figure

Anti-crossings of spin-split Landau levels in an InAs two-dimensional electron gas with spin-orbit coupling

We report tilted-field transport measurements in the quantum-Hall regime in an InAs/In_0.75Ga_0.25As/In_0.75Al_0.25As quantum well. We observe anti-crossings of spin-split Landau levels, which suggest a mixing of spin states at Landau level coincidence. We propose that the level repulsion is due to the presence of spin-orbit and of band-non-parabolicity terms which are relevant in narrow-gap systems. Furthermore, electron-electron interaction is significant in our structure, as demonstrated by the large values of the interaction-induced enhancement of the electronic g-factor.Comment: 4 pages, 3 figure

Electron correlation effects in a wide channel from the ν=1\nu =1 quantum Hall edge states

The spatial behavior of Landau levels (LLs) for the $nu=1$ quantum Hall regime at the edge of a wide channel is studied in a self-consistent way by using a generalized local density approximation proposed here. Both exchange interaction and strong electron correlations, due to edge states, are taken into account. They essentially modify the spatial behavior of the occupied lowest spin-up LL in comparison with that of the lowest spin-down LL, which is totally empty. The contrast in the spatial behavior can be attributed to a different effective one-electron lateral confining potentials for the spin-split LLs. Many-body effects on the spatially inhomogeneous spin-splitting are calculated within the screened Hartree-Fock approximation. It is shown that, far from the edges, the maximum activation energy is dominated by the gap between the Fermi level and the bottom of the spin-down LL, because the gap between the Fermi level and the spin-up LL is much larger. In other words, the maximum activation energy in the bulk of the channel corresponds to a highly asymmetric position of the Fermi level within the gap between spin-down and spin-up LLs in the bulk. We have also studied the renormalization of the edge-state group velocity due to electron correlations. The results of the present theory are in line with those suggested and reported by experiments on high quality samples.Comment: 9 pages, 4 figure

Measurement of Rashba and Dresselhaus spin-orbit magnetic fields

Spin-orbit coupling is a manifestation of special relativity. In the reference frame of a moving electron, electric fields transform into magnetic fields, which interact with the electron spin and lift the degeneracy of spin-up and spin-down states. In solid-state systems, the resulting spin-orbit fields are referred to as Dresselhaus or Rashba fields, depending on whether the electric fields originate from bulk or structure inversion asymmetry, respectively. Yet, it remains a challenge to determine the absolute value of both contributions in a single sample. Here we show that both fields can be measured by optically monitoring the angular dependence of the electrons' spin precession on their direction of movement with respect to the crystal lattice. Furthermore, we demonstrate spin resonance induced by the spin-orbit fields. We apply our method to GaAs/InGaAs quantum-well electrons, but it can be used universally to characterise spin-orbit interactions in semiconductors, facilitating the design of spintronic devices

Rashba precession in quantum wires with interaction

Rashba precession of spins moving along a one-dimensional quantum channel is calculated, accounting for Coulomb interactions. The Tomonaga--Luttinger model is formulated in the presence of spin-orbit scattering and solved by Bosonization. Increasing interaction strength at decreasing carrier density is found to {\sl enhance} spin precession and the nominal Rashba parameter due to the decreasing spin velocity compared with the Fermi velocity. This result can elucidate the observed pronounced changes of the spin splitting on applied gate voltages which are estimated to influence the interface electric field in heterostructures only little.Comment: now replaced by published versio

Magnetotransport in Two-Dimensional Electron Systems with Spin-Orbit Interaction

We present magnetotransport calculations for homogeneous two-dimensional electron systems including the Rashba spin-orbit interaction, which mixes the spin-eigenstates and leads to a modified fan-chart with crossing Landau levels. The quantum mechanical Kubo formula is evaluated by taking into account spin-conserving scatterers in an extension of the self-consistent Born approximation that considers the spin degree of freedom. The calculated conductivity exhibits besides the well-known beating in the Shubnikov-de Haas (SdH) oscillations a modulation which is due to a suppression of scattering away from the crossing points of Landau levels and does not show up in the density of states. This modulation, surviving even at elevated temperatures when the SdH oscillations are damped out, could serve to identify spin-orbit coupling in magnetotransport experiments. Our magnetotransport calculations are extended also to lateral superlattices and predictions are made with respect to 1/B periodic oscillations in dependence on carrier density and strength of the spin-orbit coupling.Comment: 8 pages including 8 figures; submitted to PR

Group Polarization in the Team Dictator Game reconsidered

While most papers on team decision-making find teams to behave more selfish, less trusting and less altruistic than individuals, Cason and Mui (1997) report that teams are more altruistic than individuals in a dictator game. Using a within-subjects design we re-examine group polarization by letting subjects make individual as well as team decisions in an experimental dictator game. In our experiment teams are more selfish than individuals, and the most selfish team member has the strongest influence on team decisions. Various sources of the different findings in Cason and Mui (1997) and in our paper are discussed

Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes from the published versio