27 research outputs found

    UV radiation enhanced oxygen vacancy formation caused by the PLD plasma plume

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    Pulsed Laser Deposition is a commonly used non-equilibrium physical deposition technique for the growth of complex oxide thin films. A wide range of parameters is known to influence the properties of the used samples and thin films, especially the oxygen-vacancy concentration. One parameter has up to this point been neglected due to the challenges of separating its influence from the influence of the impinging species during growth: the UV-radiation of the plasma plume. We here present experiments enabled by a specially designed holder to allow a separation of these two influences. The influence of the UV-irradiation during pulsed laser deposition on the formation of oxygen-vacancies is investigated for the perovskite model material SrTiO3. The carrier concentration of UV-irradiated samples is nearly constant with depth and time. By contrast samples not exposed to the radiation of the plume show a depth dependence and a decrease in concentration over time. We reveal an increase in Ti-vacancy–oxygen-vacancy-complexes for UV irradiated samples, consistent with the different carrier concentrations. We find a UV enhanced oxygen-vacancy incorporation rate as responsible mechanism. We provide a complete picture of another influence parameter to be considered during pulsed laser depositions and unravel the mechanism behind persistent-photo-conductivity in SrTiO3

    Enhanced Thermoelectric Power Factor of NaxCoO2 Thin Films by Structural Engineering

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    By controlling the crystallinity and average grain size of thermoelectric NaxCoO2 thin films, a doubling of the thermoelectric power factor is achieved in combination with a strong suppression of the thermal conductivity. These structurally engineered NaxCoO2 thin films outperform single crystalline and polycrystalline samples at room temperature and demonstrate the potential of thermoelectric oxide thin films

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    Effect of Growth Induced (Non)Stoichiometry on the Structure, Dielectric Response, and Thermal Conductivity of SrTiO<sub>3</sub> Thin Films

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    We report dramatic variations in cation stoichiometry in SrTiO<sub>3</sub> thin films grown via pulsed laser deposition and the implications of this nonstoichiometry for structural, dielectric, and thermal properties. The chemical composition of SrTiO<sub>3</sub> thin films was characterized via X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. These studies reveal that deviations in laser fluence and deposition geometry can result in deviations of cation stoichiometry as large as a few percent. Additionally, X-ray diffraction was used to probe structural evolution and revealed an asymmetric strain relaxation mechanism in which films possessing Sr-excess undergo relaxation before those possessing Sr-deficiency. Furthermore, the dielectric constant decreases and the loss tangent increases with increasing nonstoichiometry with intriguing differences between Sr-excess and -deficiency. Thermal conductivity is also found to be sensitive to nonstoichiometry, with Sr-excess and -deficiency resulting in 65% and 35% reduction in thermal conductivity, respectively. These trends are explained by the expected defect structures
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