511 research outputs found

    Dilute Multi Alpha Cluster States in Nuclei

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    Dilute multi α\alpha cluster condensed states with spherical and axially deformed shapes are studied with the Gross-Pitaevskii equation and Hill-Wheeler equation, where the α\alpha cluster is treated as a structureless boson. Applications to self-conjugate 4N4N nuclei show that the dilute NαN\alpha states of 12^{12}C to 40^{40}Ca with Jπ=0+J^\pi=0^+ appear in the energy region from threshold up to about 20 MeV, and the critical number of α\alpha bosons that the dilute NαN\alpha system can sustain as a self-bound nucleus is estimated roughly to be Ncr∌10N_{cr}\sim10. We discuss the characteristics of the dilute NαN\alpha states with emphasis on the NN dependence of their energies and rms radii.Comment: 44 pages, 8 figure

    A PET Study of Memory for Future Plan

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    In vitro feeding of all life stages of two-host Hyalomma excavatum and Hyalomma scupense and three-host Hyalomma dromedarii ticks

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    Ticks are blood-sucking ectoparasites and can transmit various pathogens of medical and veterinary relevance. The life cycle of ticks can be completed under laboratory conditions on experimental animals, but the artificial feeding of ticks has attracted increased interest as an alternative method. This study represents the first report on the successful in vitro feeding of all life stages of two-host tick species, Hyalomma scupense and Hyalomma excavatum, and the three-host tick Hyalomma dromedarii. The attachment and engorgement rates of adults were 84% (21/25) and 76% (19/25) for H. scupense females. For adult H. excavatum and H. dromedarii, 70% (21/30) and 34.4% (11/32) of the females attached and all attached females successfully fed to repletion. The oviposition rates of the artificially fed females were 36.4%, 57.1% and 63.1% for H. dromedarii, H. excavatum and H. scupense, respectively, with a reproductive efficiency index varying between 44.3 and 60.7%. For the larvae, the attachment and engorgement rates were 44.2% (313/708) and 42.8% (303/708) for H. dromedarii, 70.5% (129/183) and 56.8% (104/183) for H. excavatum and 92.6% (113/122) and 55.7% (68/122) for H. scupense. The attachment and engorgement rates for the nymphs were 90.2% (129/143) and 47.6% (68/143) for H. dromedarii, 66.7% (34/51) and 41.2% (21/51) for H. excavatum, and 44.1% (30/68) and 36.8% (25/68) for H. scupense. Molting rates of the immature stages varied between 71.3% (216/303) and 100% (68/68) for the larvae and between 61.9% (13/21) and 96% (24/25) for the nymphs. The successful in vitro feeding of all stages of the three Hyalomma species makes this method a valuable tool for tick research, with potential applications in studies on the pathogens transmitted by these tick species such as Theileria annulata

    Measurement of forward neutral pion transverse momentum spectra for s\sqrt{s} = 7TeV proton-proton collisions at LHC

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    The inclusive production rate of neutral pions in the rapidity range greater than y=8.9y=8.9 has been measured by the Large Hadron Collider forward (LHCf) experiment during LHC s=7\sqrt{s}=7\,TeV proton-proton collision operation in early 2010. This paper presents the transverse momentum spectra of the neutral pions. The spectra from two independent LHCf detectors are consistent with each other and serve as a cross check of the data. The transverse momentum spectra are also compared with the predictions of several hadronic interaction models that are often used for high energy particle physics and for modeling ultra-high-energy cosmic-ray showers.Comment: 18 Pages, 10 figures, submitted to Phys. Rev.

    Quantum Information Processing with Ferroelectrically Coupled Quantum Dots

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    I describe a proposal to construct a quantum information processor using ferroelectrically coupled Ge/Si quantum dots. The spin of single electrons form the fundamental qubits. Small (<10 nm diameter) Ge quantum dots are optically excited to create spin polarized electrons in Si. The static polarization of an epitaxial ferroelectric thin film confines electrons laterally in the semiconductor; spin interactions between nearest neighbor electrons are mediated by the nonlinear process of optical rectification. Single qubit operations are achieved through "g-factor engineering" in the Ge/Si structures; spin-spin interactions occur through Heisenberg exchange, controlled by ferroelectric gates. A method for reading out the final state, while required for quantum computing, is not described; electronic approaches involving single electron transistors may prove fruitful in satisfying this requirement.Comment: 10 pages, 3 figure

    An addressable quantum dot qubit with fault-tolerant control fidelity

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    Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has orders of magnitude improved coherence times compared with other quantum dot qubits, with T_2* = 120 mus and T_2 = 28 ms. By gate-voltage tuning of the electron g*-factor, we can Stark shift the electron spin resonance (ESR) frequency by more than 3000 times the 2.4 kHz ESR linewidth, providing a direct path to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies
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