Analytic, Non-Perturbative, Gauge-invariant QCD: Nucleon Scattering and Binding Potentials

Removal of the quenched approximation in the mechanism which produced an analytic estimate of quark-binding potentials, along with a reasonable conjecture of the color structure of the nucleon formed by such a binding potential, is shown to generate an effective, nucleon scattering and binding potential. The mass-scale factor on the order of the pion mass, previously introduced to define transverse imprecision of quark coordinates, is again used, while the strength of the potential is proportional to the square of a renormalized QCD coupling constant. The potential so derived does not include corrections due to spin, angular momentum, nucleon structure, and electroweak interactions; rather, it is qualitative in nature, showing how Nuclear Physics can arise from fundamental QCD.Comment: 25 pages, 3 figures in REVTeX. The fifth of a series on Non-Perturbative QCD (Eur. Phys. J. C65, 395 (2010) or arXiv:0903.2644 [hep-th], arXiv:1003.2936 [hep-th], arXiv:1103.4179 [hep-th] and arXiv:1104.4663 [hep-th].

A New Approach to Analytic, Non-Perturbative and Gauge-Invariant QCD

Following a previous calculation of quark scattering in eikonal approximation, this paper presents a new, analytic and rigorous approach to the calculation of QCD phenomena. In this formulation a basic distinction between the conventional "idealistic" description of QCD and a more "realistic" description is brought into focus by a non-perturbative, gauge-invariant evaluation of the Schwinger solution for the QCD generating functional in terms of the exact Fradkin representations of the Green's functional and the vacuum functional. Because quarks exist asymptotically only in bound states, their transverse coordinates can never be measured with arbitrary precision; the non-perturbative neglect of this statement leads to obstructions that are easily corrected by invoking in the basic Lagrangian a probability amplitude which describes such transverse imprecision. The second result of this non-perturbative analysis is the appearance of a new and simplifying output called "Effective Locality", in which the interactions between quarks by the exchange of a "gluon bundle" - which "bundle" contains an infinite number of gluons, including cubic and quartic gluon interactions - display an exact locality property that reduces the several functional integrals of the formulation down to a set of ordinary integrals. It should be emphasized that "non-perturbative" here refers to the effective summation of all gluons between a pair of quark lines, but does not (yet) include a summation over all closed-quark loops which are tied by gluon-bundle exchange to the rest of the "Bundle Diagram". As an example of the power of these methods we offer as a first analytic calculation the quark-antiquark binding potential of a pion, and the corresponding three-quark binding potential of a nucleon, obtained in a simple way from relevant eikonal scattering approximations.Comment: 38 pages, 3 figures in REVTeX. Collections of follow-on work of Eur. Phys. J. C65, pp. 395-411 (2010). arXiv admin note: text overlap with arXiv:1103.4179, arXiv:1104.4663, arXiv:1003.293

Non-perturbative QCD amplitudes in quenched and eikonal approximations

Even though approximated, strong coupling non-perturbative QCD amplitudes remain very difficult to obtain. In this article, in eikonal and quenched approximations, physical insights are presented that rely on the newly-discovered property of Effective Locality.Comment: Revised version (28 pages and 1 figure in REVTeX). Follow-up work of Eur. Phys. J. C65, pp. 395-411 (2010), (arXiv:1204.2038 [hep-ph]), and Ann. Phys. 327, pp. 2666-2690 (2012), (arXiv:1203.6137 [hep-ph]

Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon

We previously developed a fitting method of several parameters to evaluate ion-implantation-caused damage profiles from spectroscopic ellipsometry (SE) (M. Fried et al., J. Appl. Phys., 71 (1992) 2835). Our optical model consists of a stack of layers with fixed and equal thicknesses and damage levels described by a depth profile function (coupled half Gaussians). The complex refractive index of each layer is calculated from the actual damage level by Bruggeman effective medium approximation (EMA) using crystalline (c-Si) and amorphous (a-Si) silicon as end-points. Two examples are presented of the use of this method with modified optical models. First, we investigated the surface damage formed by room temperature B+ and N+ implantation into silicon. For the analysis of the SE data we added a near surface amorphous layer to the model with variable thickness. Second, we determined 20 keV B+ implantation-caused damage profiles in relaxed (annealed) amorphous silicon. In this special case, the complex refractive index of each layer was calculated from the actual damage level by the EMA using relaxed a-Si and implanted a-Si as end-points. The calculated profiles are compared with Monte Carlo simulations (TRIM code); good agreement is obtained

Determination of complex dielectric functions of ion implanted and implanted‐annealed amorphous silicon by spectroscopic ellipsometry

Measuring with a spectroscopic ellipsometer (SE) in the 1.8–4.5 eV photon energy region we determined the complex dielectric function (ϵ = ϵ1 + iϵ2) of different kinds of amorphous silicon prepared by self‐implantation and thermal relaxation (500 °C, 3 h). These measurements show that the complex dielectric function (and thus the complex refractive index) of implanted a‐Si (i‐a‐Si) differs from that of relaxed (annealed) a‐Si (r‐a‐Si). Moreover, its ϵ differs from the ϵ of evaporated a‐Si (e‐a‐Si) found in the handbooks as ϵ for a‐Si. If we use this ϵ to evaluate SE measurements of ion implanted silicon then the fit is very poor. We deduced the optical band gap of these materials using the Davis–Mott plot based on the relation: (ϵ2E2)1/3 ∼ (E− Eg). The results are: 0.85 eV (i‐a‐Si), 1.12 eV (e‐a‐Si), 1.30 eV (r‐a‐Si). We attribute the optical change to annihilation of point defects

On QCD and Effective Locality

In a recent paper it was shown how quark scattering in a quenched, eikonal model led to a momentum-transfer dependent amplitude expressed in terms of Halpern's functional integral; and how the requirement of manifest gauge invariance converted that functional integral into a local integral, capable of being evaluated with precision by a finite set of numerical integrations. We here prove that this property of "effective locality" holds true for all quark processes, without approximation and without exception.Comment: Expanded and Revised in REVTeX 4.1, 14 pages, follow-on work of Eur. Phys. J. C65, pp.395-411 (2010) or arXiv:0903.2644v2 [hep-th

Meeting The Challenges Of The International Financial Crisis

I had earlier been invited to focus on the Canadian proposal for enhanced surveillance of international financial system