Numerical simulation of InGaN Schottky solar cell

The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potentiality to allow achieving high efficiency solar cells through the tuning of its band gap by changing the Indium composition. It also counts among its advantages a relatively low effective mass, high carriers\^a mobility, a high absorption coefficient along with good radiation tolerance.However, the main drawback of InGaN is linked to its p-type doping, which is difficult to grow in good quality and on which ohmic contacts are difficult to realize. The Schottky solar cell is a good alternative to avoid the p-type doping of InGaN. In this report, a comprehensive numerical simulation, using mathematically rigorous optimization approach based on state-of-the-art optimization algorithms, is used to find the optimum geometrical and physical parameters that yield the best efficiency of a Schottky solar cell within the achievable device fabrication range. A 18.2% efficiency is predicted for this new InGaN solar cell design

Robust Design by Antioptimization for Parameter Tolerant GaAs/AlOx High Contrast Grating Mirror for VCSEL Application

A GaAs/AlOx high contrast grating structure design which exhibits a 99.5% high reflectivity for a 425nm large bandwidth is reported. The high contrast grating (HCG) structure has been designed in order to enhance the properties of mid-infrared VCSEL devices by replacing the top Bragg mirror of the cavity. A robust optimization algorithm has been implemented to design the HCG structure not only as an efficient mirror but also as a robust structure against the imperfections of fabrication. The design method presented here can be easily adapted for other HCG applications at different wavelengths.Comment: (c) 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists or reuse of any copyrighted components of this work in other work

Simulation study of a new InGaN p-layer free Schottky based solar cell

On the road towards next generation high efficiency solar cells, the ternary Indium Gallium Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum through the change in its Indium composition. The choice of the main structure of the InGaN solar cell is however crucial. Obtaining a high efficiency requires to improve the light absorption and the photogenerated carriers collection that depend on the layers parameters, including the Indium composition, p-and n-doping, device geometry.. . Unfortunately, one of the main drawbacks of InGaN is linked to its p-type doping, which is very difficult to realize since it involves complex technological processes that are difficult to master and that highly impact the layer quality. In this paper, the InGaN p-n junction (PN) and p-in junction (PIN) based solar cells are numerically studied using the most realistic models, and optimized through mathematically rigorous multivariate optimization approaches. This analysis evidences optimal efficiencies of 17.8% and 19.0% for the PN and PIN structures. It also leads to propose, analyze and optimize player free InGaN Schottky-Based Solar Cells (SBSC): the Schottky structure and a new MIN structure for which the optimal efficiencies are shown to be a little higher than for the conventional structures: respectively 18.2% and 19.8%. The tolerance that is allowed on each parameter for each of the proposed cells has been studied. The new MIN structure is shown to exhibit the widest tolerances on the layers thicknesses and dopings. In addition to its being player free, this is another advantage of the MIN structure since it implies its better reliability. Therefore, these new InGaN SBSC are shown to be alternatives to the conventional structures that allow removing the p-type doping of InGaN while giving photovoltaic (PV) performances at least comparable to the standard multilayers PN or PIN structures.Comment: Superlattices and Microstructures, Elsevier, 201

The theory of photorefractive resonance for localized beams in two-carrier photorefractive systems

This paper extends the existing theory of two carrier photorefractivity resonance, which is generally applied to Iron doped Indium Phosphide (InP:Fe), to the case of low non-harmonic illumination. The space charge field profile is computed, and the variations of its amplitude, width and position are determined as functions of the background intensity. The effect of photorefractive resonance on these quantities is evidenced, contributing to the understanding of published experimental results in InP:Fe.Comment: Physical Review A: Atomic, Molecular and Optical Physics Accepted (2009) To be publishe

Cellular Computing and Least Squares for partial differential problems parallel solving

The pre-print archived version is not the one that is published, as the editor does not formally allow it.International audienceThis paper shows how partial differential problems can be solved thanks to cellular computing and an adaptation of the Least Squares Finite Elements Method. As cellular computing can be implemented on distributed parallel architectures, this method allows the distribution of a resource demanding differential problem over a computer network

Microsecond infrared beam bending in photorefractive iron doped indium phosphide

International audienceA time resolved study of the behavior of a single beam in photorefractive iron doped indium phosphide is provided down to the microsecond range, showing that infrared beam bending does occur on the microsecond time scale for moderate beam intensities. Two distinct time scales are evidenced, the behavior of which are the sign of two different photorefractive mechanisms

Optique Ondulatoire

Utiliser la version "slides" du cours pour la projeter avec n'importe quel lecteur de PDF (type Acrobat Reader), en ayant auparavant distribué la version "handout" imprimée..; http://moodle.univ-metz.fr/course/view.php?id=770Licence / L2Cours d'Optique Ondulatoire adapté à une vidéo-projection, associé à un manuel, de niveau Licence deuxième anné

Experimental control of steady state photorefractive self-focusing in InP:Fe at infrared wavelengths

International audienceThis paper reports an experimental study of the self-focusing process in iron doped indium phosphide at an 1.06 micron wavelength, identifying the influence of temperature, beam intensity and background illumination \RefereeOne{for two different iron dopings}. We point out that the iron ionization ratio is at the origin of different qualitative behavior previously reported and we show that it is possible to reproduce the said behaviors in the same crystal by applying a uniform illumination, allowing their eventual control for dynamic wave-guiding

SLALOM: Open-source, portable, and easy-to-use solar cell optimizer. Application to the design of InGaN solar cells

International audienceThe design and optimization of novel structures is an essential part of the next-generation solar cells development. Indeed, the technological steps involved in the development of high-performance solar cells involve a huge set of interdependent physical and geometrical parameters: layers thicknesses, dopings, compositions, and defect characteristics. In this work, we propose a new open-source and free solar cell optimizer: SLALOM À for SoLAr ceLl multivariate OptiMizer À that implements a rigorous multivariate approach, which improves from the one-parameter-at-a-time procedure that is traditionally used in the field to a state-of-the-art multivariate approach. Applied to indium gallium nitride (InGaN) solar cells, it shows its potential to become a useful tool for the development of novel solar cells. SLALOM is implemented to be extended to any semiconductor simulation engine. Several models for solar cells have been implemented in SLALOM, including, for instance, InGaN. One can adapt these models to any solar cell technology by changing the parameter set, the here proposed generic code structure remaining unchanged