36 research outputs found

    Total Dose and Dose Rate Effects on Some Current Semiconducting Devices

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    AN APPROXIMATE CALCULATION OF ACTIVE PIXEL SENSORS TEMPORAL NOISE FOR HIGH ENERGY PHYSICS

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    Research NoteA simple calculation of the temporal noise of an elementary pixel is made. The equivalent noise charge takes into consideration the series and parallel noise as a function of the observation time

    High Purity Germanium: From Gamma-Ray Detection to Dark Matter Subterranean Detectors

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    High purity germanium remains the material of choice for the detection of photons in the range of MeV or higher, down to the hard X-ray range. Since the operation of HPGe-based detectors is possible only at or below the liquid nitrogen temperature, their advantage is mainly the resolution, which matches the Fano factor if appropriate cooled electronic readout is used. We focus here on present-day applications of HPGe detectors, which are now broader than ever despite the recent development of room-temperature photon detectors based on binary compounds. We present in particular dark matter detectors and γ-ray trackers as examples of the recent applications of HPGe as a detecting medium. More generally, we discuss the future of γ-ray detectors and the role that the semiconductor detectors will keep with respect to alternative detection materials. This chapter is an introduction to this general topic, and the reader is encouraged to refer to research and review articles on this subject published in the past or recently

    Progress in particle tracking and vertexing detectors

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    This is part of a document, which is devoted to the developments of pixel detectors in the context of the International Linear Collider. From the early developments of the MIMOSAs to the proposed DotPix I recall some of the major progresses. The need for very precise vertex reconstruction is the reason for the Research and Development of new pixel detectors, first derived from the CMOS sensors and in further steps with new semiconductors structures. The problem of radiation effects was investigated and this is the case for the noise level with emphasis of the benefits of downscaling. Specific semiconductor processing and characterisation techniques are also described, with the perspective of a new pixel structure

    Degradation de dispositifs MOS durcis à basse température

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