Circuit Design in Nanoscale FDSOI Technologies

Abstract -Planar fully-depleted SOI technology with ultrathin body and buried oxide presents a platform for an energyefficient design in deeply scaled technologies without major changes in the bulk-CMOS design infrastructure. Good control of short-channel effects with thin transistor body offers a possibility to reduce the supply voltage. Thin buried oxide provides threshold tuning via body bias. Overall design optimality is achieved through sensitivity-based optimization by selecting optimal supplies and thresholds

A RISC-V Vector Processor With Simultaneous-Switching Switched-Capacitor DC-DC Converters in 28 nm FDSOI

This work demonstrates a RISC-V vector microprocessor implemented in 28 nm FDSOI with fully integrated simultaneous-switching switched-capacitor DC-DC (SC DC-DC) converters and adaptive clocking that generates four on-chip voltages between 0.45 and 1 V using only 1.0 V core and 1.8 V IO voltage inputs. The converters achieve high efficiency at the system level by switching simultaneously to avoid charge-sharing losses and by using an adaptive clock to maximize performance for the resulting voltage ripple. Details about the implementation of the DC-DC switches, DC-DC controller, and adaptive clock are provided, and the sources of conversion loss are analyzed based on measured results. This system pushes the capabilities of dynamic voltage scaling by enabling fast transitions (20 ns), simple packaging (no off-chip passives), low area overhead (16%), high conversion efficiency (80%-86%), and high energy efficiency (26.2 DP GFLOPS/W) for mobile devices

Independent body-biasing of P-N transistors in an 28nm UTBB FD-SOI ULP near-threshold multi-core cluster

Advanced Ultra-Low Power (ULP) computing platforms can be affected by large performance variations. This phenomenon is mainly caused by process and ambient temperature variations, and it is magnified by the strong Temperature Effect Inversion (TEI) that characterizes devices when operating Near-Threshold (NT) in highly scaled nodes. 28nm UTBB FD-SOI technology supports an extended range of both forward and reverse Body-Bias (BB) voltage. This feature can be efficiently used to reduce margins at design time and compensate variations at runtime. In this paper we propose a BB voltage controller capable to independently probe the maximum frequency of P and N transistors, and leverage a BB voltage adjustment to achieve a user-specified target frequency, minimizing the leakage current. Compared to the case where zero BB is applied to the transistors, the controller achieves up to 23% power reduction exploiting the performance increase originated by TEI, further reducing power by 12% with respect to a symmetric BB approach

Resilient Automotive Products through Process, Temperature and Aging Compensation Schemes

International audienc

Performance-aware predictive-model-based on-chip body-bias regulation strategy for an ULP multi-core cluster in 28 nm UTBB FD-SOI

The performance and reliability of Ultra-Low-Power (ULP) computing platforms are adversely affected by environmental temperature and process variations. Mitigating the effect of these phenomena becomes crucial when these devices operate near-threshold, due to the magnification of process variations and to the strong temperature inversion effect that affects advanced technology nodes in low-voltage corners, which causes huge overhead due to margining for timing closure. Supporting an extended range of reverse and forward body-bias, UTBB FD-SOI technology provides a powerful knob to compensate for such variations. In this work we propose a methodology to maximize energy efficiency at run-time exploiting body biasing on a ULP platform operating near-threshold. The proposed method relies on on-line performance measurements by means of Process Monitoring Blocks (PMBs) coupled with an on-chip low-power body bias generator. We correlate the measurement performed by the PMBs to the maximum achievable frequency of the system, deriving a predictive model able to estimate it with an error of 9.7% at 0.7 V. To minimize the effect of process variations we propose a calibration procedure that allows to use a PMB model affected by only the temperature-induced error, which reduces the frequency estimation error by 2.4x (from 9.7% to 4%). We finally propose a controller architecture relying on the derived models to automatically regulate at run-time the body bias voltage. We demonstrate that adjusting the body bias voltage against environmental temperature variations leads up to 2X reduction in the leakage power and a 15% improvement on the global energy consumption when the system operates at 0.7 V and 170 MHz

Resilient Automotive Products through Process, Temperature and Aging Compensation Schemes

International audienc