Anomalous Stark Shifts in Single Vertically Coupled Pairs of InGaAs Quantum Dots

Vertically coupled Stranski Krastanow QDs are predicted to exhibit strong tunnelling interactions that lead to the formation of hybridised states. We report the results of investigations into single pairs of coupled QDs in the presence of an electric field that is able to bring individual carrier levels into resonance and to investigate the Stark shift properties of the excitons present. Pronounced changes in the Stark shift behaviour of exciton features are identified and attributed to the significant redistribution of the carrier wavefunctions as resonance between two QDs is achieved. At low electric fields coherent tunnelling between the two QD ground states is identified from the change in sign of the permanent dipole moment and dramatic increase of the electron polarisability, and at higher electric fields a distortion of the Stark shift is attributed to a coherent tunnelling effect between the ground state of the upper QD and the excited state of the lower QD.Comment: Conference paper for QD2004 3 figure

Strong electrically tunable exciton g-factors in an individual quantum dots due to hole orbital angular momentum quenching

Strong electrically tunable exciton g-factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight band k.p simulations quantitatively account for our observations, simultaneously reproducing the exciton transition energy, DC Stark shift, diamagnetic shift and g-factor tunability for model dots with the measured size and a comparatively low In-composition of x(In)~35% near the dot apex. We show that the observed g-factor tunability is dominated by the hole, the electron contributing only weakly. The electric field induced perturbation of the hole wavefunction is shown to impact upon the g-factor via orbital angular momentum quenching, the change of the In:Ga composition inside the envelope function playing only a minor role. Our results provide design rules for growing self-assembled quantum dots for electrical spin manipulation via electrical g-factor modulation

Self-consistent Coulomb effects and charge distribution of quantum dot arrays

This paper considers the self-consistent Coulomb interaction within arrays of self-assembled InAs quantum dots (QDs) which are embedded in a pn structure. Strong emphasis is being put on the statistical occupation of the electronic QD states which has to be solved self-consistently with the actual three-dimensional potential distribution. A model which is based on a Green's function formalism including screening effects is used to calculate the interaction of QD carriers within an array of QDs, where screening due to the inhomogeneous bulk charge distribution is taken into acount. We apply our model to simulate capacitance-voltage (CV) characteristics of a pn structure with embedded QDs. Different size distributions of QDs and ensembles of spatially perodic and randomly distributed arrays of QDs are investigated.Comment: submitted to pr

Time-resolved spectroscopy of multi-excitonic decay in an InAs quantum dot

The multi-excitonic decay process in a single InAs quantum dot is studied through high-resolution time-resolved spectroscopy. A cascaded emission sequence involving three spectral lines is seen that is described well over a wide range of pump powers by a simple model. The measured biexcitonic decay rate is about 1.5 times the single-exciton decay rate. This ratio suggests the presence of selection rules, as well as a significant effect of the Coulomb interaction on the biexcitonic wavefunction.Comment: one typo fixe

Electron and hole storage in self-assembled InAs quantum dots

FWN – Publicaties zonder aanstelling Universiteit Leide

Spin-based quantum information processing with semiconductor quantum dots and cavity QED

A quantum information processing scheme is proposed with semiconductor quantum dots located in a high-Q single mode QED cavity. The spin degrees of freedom of one excess conduction electron of the quantum dots are employed as qubits. Excitonic states, which can be produced ultrafastly with optical operation, are used as auxiliary states in the realization of quantum gates. We show how properly tailored ultrafast laser pulses and Pauli-blocking effects, can be used to achieve a universal encoded quantum computing.Comment: RevTex, 2 figure

Sub-microsecond correlations in photoluminescence from InAs quantum dots

Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is observed, while with quasi-resonant excitation, a positive correlation (blinking) is observed. A simple model based on long-lived charged states is presented that approximately explains the observed behavior, providing insight into the excitation process. Such memory effects can limit the internal efficiency of light emitters based on single quantum dots, and could also be problematic for proposed quantum-computation schemes.Comment: 8 pages, 8 figure

Polarization-Correlated Photon Pairs from a Single Quantum Dot

Polarization correlation in a linear basis, but not entanglement, is observed between the biexciton and single-exciton photons emitted by a single InAs quantum dot in a two-photon cascade. The results are well described quantitatively by a probabilistic model that includes two decay paths for a biexciton through a non-degenerate pair of one-exciton states, with the polarization of the emitted photons depending on the decay path. The results show that spin non-degeneracy due to quantum-dot asymmetry is a significant obstacle to the realization of an entangled-photon generation device.Comment: 4 pages, 4 figures, revised discussio

Tuning the optical emission of MoS2 nanosheets using proximal photoswitchable azobenzene molecules

We report photoluminescence measurements performed on monolayer- and two-layer-MoS2 placed on two types of mixed self-assembled monolayers (mSAMs) of photoswitchable azobenzene molecules. The two mSAMs differ via the electronegative character of the azobenzene derivatives. Thin layers of a transition metal dichalcogenide - MoS2 - were mechanically exfoliated on mSAM to allow for direct interaction between the molecules and the MoS2 layers. When the MoS2 nanosheet is in contact with the electropositive azobenzene molecules in trans configuration, an emission side band at lower energies and at low excitation powers suggest n-type doping. The photoisomerization of the molecules from trans to cis configuration lowers the doping, quenching the side band and enhancing the overall PL efficiency by a factor of 3c3. Opposite results were observed with the chlorinated, more electronegative molecules, exhibiting a reversed trend in the PL efficiency between trans and cis, but with an overall larger intensity. The type of doping induced by the two types of mSAMs was determined by Kelvin probe force microscopy technique