12 research outputs found
The contribution of x-ray specular reflectometry to the oxygen-induced magnetic properties in Pt/Co/AlOx
3 pagesInternational audienceTwo key parameters were analyzed in Si/SiO/Pt/Co/AlOx: the oxidation time of the Al layer resulting in AlOx, and the ex situ annealing temperatures varied in the 15 and 55 s and 20, 300, and 450 °C ranges, respectively. For intermediate annealing temperatures (∼300 °C), the quantitative analysis of specular reflectometry data shows that the progressive oxidation of layers by increasing the oxidation time goes along with an improvement of the homogeneity of the alumina layer. This outcome casts new light on the temperature dependence of magnetic properties of the samples. The remarkable temperature variation of the coercive field, extracted from extraordinary Hall effects in the 5-300 K range, is associated with structural change due to Co-oxygen bondings, which leads to strong pinning of Co spins in the low temperature regime
Investigation of metallic/oxide interfaces in Pt/Co/AlOx trilayers by hard x-ray reflectivity
International audienceX-ray reflectivity (XRR) is used to determine the oxidation front at the nanometer scale in sputtered perpendicular semi tunnel junctions, as the form Pt/Co/AlOx, by varying the oxidation time tOx of the capping layer. From XRR simulations, we show that the nature of the stack is gradually defined according to the value of tOx. For low tOx values (<40 s), a simple Pt/Co/Al/AlOx multilayer is appearing whereas a Pt/Co/CoO/AlOx architecture takes place for higher tOx. The oxygen-induced magnetic properties obtained by extraordinary Hall effects measurements are explained by the structural results. The increase of Co-O bondings with tOx is at the origin of the appearing of the perpendicular magnetic anisotropy (PMA)
Simulation of surface resonant x-ray diffraction
We present an ab initio numerical tool to simulate surface resonant X-ray diffraction experiments. The crystal truncation rods and the spectra around a given X-ray absorption edge are calculated at any position of the reciprocal space. Density functional theory is used to determine the resonant scattering factor of an atom within its local environment and to calculate the diffraction peak intensities for surfaces covered with a thin film or with one or several adsorbed layers. Besides the sample geometry, the collected data also depend on several parameters, such as beam polarization and incidence and exit angles. In order to account for these factors, a numerical diffractometer mimicking the experimental operation modes has been created. Finally two case studies are presented in order to compare our simulations with experimental spectra: (i) a magnetite thin film deposited on a silver substrate and (ii) an electrochemical interface consisting of bromine atoms adsorbed on copper
A novel oxalate-based three dimensional polymorphs supramolecular compounds: Synthesis, spectroscopic characterization, magnetic and photocatalytic properties
International audienceThis is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain
Magnetic Properties of Cobalt Films at the Initial Stage of Ion-Beam Deposition
International audienceVariations in the magnetic properties of ion-beam-deposited cobalt (Co) films from the onset of nucleation until the passage to a bulk-like state have been studied using ferromagnetic resonance (FMR) measurements at 9.55 GHz and SQUID magnetometry. Depending on the Co film thickness, the FMR line width ΔH exhibits a sharp transition from large values (0.24 kOe 0.54 kOe at 10 K), while thicker films are char acterized by HC < 0.16 kOe in the entire range of temperatures up to 300 K. Large values of ΔH and HC at the nucleation and initial growth stages are related to the contribution from a transition Co/Si layer formed under the action of self irradiation with a high-energy component of the deposited flux, which is inherent in the ion-beam sputtering in high vacuum. This fraction of high-energy Co atoms does not exceed 10% of their total flux and is characterized by a mean projected range of 0.8 nm in the growing Co layer and 1.2 nm in the Si substrate. Conditions of using Co films with intermediate thicknesses within 0.8 nm < t ≤ 2 nm for the injection of a spin-polarized current into silicon at room temperature are discussed
Structural and magnetic properties of Ni3N synthesized by multidipolar microwave plasma-assisted reactive sputtering
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Reduced Thermal Variation of Perpendicular Magnetic Anisotropy in Magnetically Stiffened Dual-W Composite Storage Layer for Spin-Transfer-Torque Magnetic Random-Access Memory
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Controlled Growth of Co Nanofilms on Si(100) by Ion-Beam puttering
International audienceThe effect of process conditions on the properties of cobalt films grown on silicon by ion-beam sputtering is analyzed from the nucleation stage to film thicknesses corresponding to the properties of bulk material. The argon ion energy is shown to play a central role in determining the sputtering process. Sputtering a cobalt target with argon ions less than 0.8 keV in energy produces granular layers. The cobalt layers grown at argon ion energies above 1.2 keV are continuous even in the nucleation stage. The layers 1.2 to 2 nm in thickness have high resistivity and are comparable in magnetic properties to bulk material. The high-energy component of the total flux of cobalt atoms ejected from the target plays an important role in the initial stages of deposition, especially at argon ion energies from 1.2 to 2.2 keV. In the nucleation stage, the energy deposited by cobalt atoms in the silicon substrate facilitates the formation of a continuous layer in the initial stage of the process
Competition between CoOx and CoPt phases in Pt/Co/AlOx semi tunnel junctions
10 pagesInternational audienceWe report on the evolution of the structure and composition of a Pt(3 nm)/Co(0.6 nm)/AlOx(2 nm) trilayer sputtered on Si/SiO2 under oxidation and annealing processes by combined x-ray reflectivity and x-ray absorption studies. We describe the progressive and inhomogeneous oxidation of the layers by increasing the oxidation time. Before annealing, the layers have lower density than bulk samples and noticeable roughness. After thermal annealing, a significant improvement of the quality of the alumina layer goes along with the formation of a CoPt alloy that reduces the number of Co-O bonds. These structural outcomes clarify the evolution of the magnetic and transport properties reported at room temperature in these samples