Intrinsic Noise of the Single Electron Box

We quantify the intrinsic noise of the Single Electron Box arising from stochastic cyclic electron tunnelling between a quantum dot and a resevoir driven by a periodic gate voltage. We use both a master equation formalism and Markov Monte Carlo simulations to calculate the gate noise current, and find it to be generated by a cyclostationary process which displays significant spectral correlations at large excitation amplitudes and high tunnel rates. We model noise filtering through an electrical resonator and detection via synchronous demodulation to evaluate the effective noise spectral density in rf-reflectometry qubit readout applications, and determine the conditions under which the intrinsic noise limit could be measured experimentally. Our results have implications in the ultimate sensitivity of SEBs for fast, high-fidelity readout of spin qubits.Comment: 6 pages, 4 figure

A silicon-based single-electron interferometer coupled to a fermionic sea

We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterise the coherent charge qubit dynamics in the strong-driving regime. The device is realised within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous non-demolition manner by measuring the dispersive response of a high-frequency electrical resonator coupled to the quantum system via the gate. By performing multiple fast passages around the qubit avoided crossing, we observe a multi-passage LZSM interferometry pattern. At larger driving amplitudes, a projective measurement to an even-parity charge state is realised, showing a strong enhancement of the dispersive readout signal. At even larger driving amplitudes, two projective measurements are realised within the coherent evolution resulting in the disappearance of the interference pattern. Our results demonstrate a way to increase the state readout signal of coherent quantum systems and replicate single-electron analogues of optical interferometry within a CMOS transistor

Gate-based spin readout of hole quantum dots with site-dependent g−g-factors

The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and addressability via all-electric drives. However, owing to a strong spin-orbit interaction, these systems present variability and anisotropy in key qubit control parameters such as the Land\'e $g-$factor, requiring careful characterisation for reliable qubit operation. Here, we experimentally investigate a hole double quantum dot in silicon by carrying out spin readout with gate-based reflectometry. We show that characteristic features in the reflected phase signal arising from magneto-spectroscopy convey information on site-dependent $g-$factors in the two dots. Using analytical modeling, we extract the physical parameters of our system and, through numerical calculations, we extend the results to point out the prospect of conveniently extracting information about the local $g-$factors from reflectometry measurements.Comment: Main manuscript: 12 pages, 8 figures. Supplementary Information: 3 pages, 2 figure

Electric-field tuning of the valley splitting in silicon corner dots

We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley splitting on back-gate voltage, from $880~\mu \text{eV}$ to $610~\mu \text{eV}$ with a slope of $-45\pm 3~\mu \text{eV/V}$ (or equivalently a slope of $-48\pm 3~\mu \text{eV/(MV/m)}$ with respect to the effective field). The experimental results are backed up by tight-binding simulations that include the effect of surface roughness, remote charges in the gate stack and discrete dopants in the channel. Our results demonstrate a way to electrically tune the valley splitting in silicon-on-insulator-based quantum dots, a requirement to achieve all-electrical manipulation of silicon spin qubits.Comment: 5 pages, 3 figures. In this version: Discussion of model expanded; Fig. 3 updated; Refs. added (15, 22, 32, 34, 35, 36, 37

Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Local temperature measurements are important in the study of quantum thermodynamics at the nanoscale. The authors report a sensor based on cyclic electron tunnelling between a quantum dot and single-electron reservoir which can be used to provide local and precise temperature measurements in nanoelectronic devices