Intrinsic Noise of the Single Electron Box

Abstract

We quantify the intrinsic noise of the Single Electron Box arising from stochastic cyclic electron tunnelling between a quantum dot and a resevoir driven by a periodic gate voltage. We use both a master equation formalism and Markov Monte Carlo simulations to calculate the gate noise current, and find it to be generated by a cyclostationary process which displays significant spectral correlations at large excitation amplitudes and high tunnel rates. We model noise filtering through an electrical resonator and detection via synchronous demodulation to evaluate the effective noise spectral density in rf-reflectometry qubit readout applications, and determine the conditions under which the intrinsic noise limit could be measured experimentally. Our results have implications in the ultimate sensitivity of SEBs for fast, high-fidelity readout of spin qubits.Comment: 6 pages, 4 figure