Gate-Controlled Skyrmion Chirality

Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that this key parameter can be controlled by a gate voltage. We observed that the current-induced skyrmion motion can be reversed by the application of a gate voltage. This local and dynamical reversal of the skyrmion chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This gate-controlled chirality provides a local and dynamical degree of freedom, yielding new functionalities to skyrmion-based logic devices.Comment: 4 figure

Magnetic domain wall dynamics in the precessional regime: Influence of the Dzyaloshinskii-Moriya interaction

International audienceThe domain wall dynamics driven by an out of plane magnetic field was measured for a series of magnetic trilayers with different strengths of the interfacial Dzyaloshinskii-Moriya interaction (DMI). The features of the field-driven domain wall velocity curves strongly depend on the ratio of the field $H_{D}$ stabilizing chiral N\'{e}el walls to the demagnetizing field within the domain wall $H_{DW}$. The measured Walker velocity, which in systems with large DMI is maintained after the Walker field, giving rise to a velocity plateau up to the Slonczewski field $H_S$, can be related to the DMI strength. Yet, when $H_{D}$ and $H_{DW}$ have comparable values, a careful analysis needs to be done in order to evaluate the impact of the DMI on the domain wall velocity. By means of a one-dimensional model and 2D simulations, we extend this method and we clarify the interpretation of the experimental curves measured for samples where $H_{D}$ and $H_{DW}$ are comparable

Asymmetry of nucleation density and its variation with Pt spacer thickness in exchange-biased [Pt/Co] 5 /Pt/FeMn multilayers

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Kinetics of Ion Migration in the Electric Field‐Driven Manipulation of Magnetic Anisotropy of Pt/Co/Oxide Multilayers

International audienceMagneto-ionics is a fast developing research field which opens the perspective of energy efficient magnetic devices, where the magnetization direction is controlled by an electric field which drives the migration of ionic species. In this work, the interfacial perpendicular magnetic anisotropy (PMA) of Pt/Co/oxide stacks covered by ZrO2, acting as a ionic conductor, is tuned by a gate voltage at room temperature. A large variation of the PMA is obtained by modifying the oxidation of the cobalt layer through the migration of oxygen ions: the easy magnetization axis can be switched reversibly from in-plane, with under-oxidized Co, to in-plane, with over-oxidized Co, passing through an out-of-plane magnetization state. The switching time between the different magnetic states is limited by the ion drift velocity. This depends exponentially on the gate voltage, and is varied by over five orders of magnitude, from several minutes to a few ms. The variation of the PMA versus time during the application of the gate voltage can be modeled with a parabolic variation of the PMA and an exponential decrease of the Co oxidation rate. The possibility to explain the observed effect with a simple theoretical model opens the possibility to engineer materials with optimized properties

Reversible and irreversible voltage manipulation of interfacial magnetic anisotropy in Pt/Co/oxide multilayers

Main texte (3 figures) + supplemental Information (3 figures)International audienceThe perpendicular magnetic anisotropy at the Co/oxide interface in Pt/Co/MOx (MOx = MgOx, AlOx, TbOx) was modified by an electric field using a 10 nm-thick ZrO2 as a solid electrolyte. The large voltage-driven modification of interfacial magnetic anisotropy and the non-volatility of the effect is explained in terms of the migration of oxygen ions towards/away from the Co/MOx interface. While the effect is reversible in Pt/Co/AlOx and Pt/Co/TbOx, where the Co layer can be oxidised or reduced, in Pt/Co/MgOx the effect has been found to be irreversible. We propose that these differences may be related to the different nature of the ionic conduction within the MOx layers

Tuning the Dynamics of Chiral Domain Walls of Ferrimagnetic Films by Magnetoionic Effects

International audienceThe manipulation of magnetism with a gate voltage is expected to lead the way towards the realization of energy-efficient spintronics devices and high-performance magnetic memories. Exploiting magneto-ionic effects under micro-patterned electrodes in solid-state devices adds the possibility to modify magnetic properties locally, in a non-volatile and reversible way. Tuning magnetic anisotropy, magnetization and Dzyaloshinskii-Moriya interaction allows modifying "at will" the dynamics of non trivial magnetic textures such as skyrmions and chiral domain walls in magnetic race tracks. In this work, we illustrate efficient magneto-ionic effects in a ferrimagnetic Pt/Co/Tb/AlOx stack using a ZrO 2 thin layer as a solid state ionic conductor. When a thin layer of terbium is deposited on top of cobalt, it acquires a magnetic moment that aligns antiparallel to that of cobalt, reducing the effective magnetization. Below the micro-patterned electrodes, the voltage-driven migration of oxygen ions in a ZrO 2 towards the ferrimagnetic stack partially oxidizes the Tb layer, leading to the local variation not only of the magnetization, but also of the magnetic anisotropy and of the Dzyaloshinskii-Moriya interaction. This leads to a huge increase of the domain wall velocity, which varies from 10 m/s in the pristine state to 250 m/s after gating. This non-volatile and reversible tuning of the domain wall dynamics may lead to applications to reprogrammable magnetic memories or other spintronic devices

Improving Néel domain walls dynamics and skyrmion stability using He ion irradiation

10 pages, 4 figuresMagnetization reversal and domain wall dynamics in Pt/Co/AlOx trilayers have been tuned by He+ ion irradiation. Fluences up to 1.5x10$^{15}$ ions/cm$^2$ strongly decrease the perpendicular magnetic anisotropy (PMA), without affecting neither the spontaneous magnetization nor the strength of the Dzyaloshinskii-Moriya interaction (DMI). This confirms the robustness of the DMI interaction against interfacial chemical intermixing, already predicted by theory. In parallel with the decrease of the PMA in the irradiated samples, a strong decrease of the depinning field is observed. This allows the domain walls to reach large maximum velocities with lower magnetic fields with respect to those needed for the pristine films. Decoupling PMA from DMI can therefore be beneficial for the design of low energy devices based on domain wall dynamics. When the samples are irradiated with larger He+ fluences, the magnetization gets close to the out-of-plane/in-plane reorientation transition where 100nm size magnetic skyrmions are stabilized. We observe that as the He+ fluence increases, the skyrmion size decreases while these magnetic textures become more stable against the application of an external magnetic field

Designing networks of resistively-coupled stochastic Magnetic Tunnel Junctions for energy-based optimum search

International audienceWe study recurrent networks of binary stochastic Magnetic Tunnel Junctions (sMTJ), aiming at efficiently solving computationally hard optimization problems. After validating a prototyping route, we investigate the impact of hybrid CMOS+MTJ building block variants on the quality of stochastic sampling, a key feature for optimum search in a complex landscape. In this regard, a better decoupling of the read/write paths gives spin-orbit torque (SOT) sMTJs an advantage over two-terminal spin-transfer torque (STT) sMTJs. We carry out a functional and power consumption analysis on asynchronous Ising networks in which coupling occurs through arrays of resistors, in the frame of Boolean satisfiability (SAT) solving. Using our SPICE model, we demonstrate that a 48-node SOT sMTJs network successfully converges to its ground state, factoring an 8-bit integer in 10µs with an estimated power consumption of 133µW/node

Gate-controlled skyrmion and domain wall chirality

International audienceMagnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter. We probe the chirality of skyrmions and chiral domain walls by observing the direction of their current-induced motion and show that a gate voltage can reverse it. This local and dynamical reversal of the chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This control of chirality with 2–3 V gate voltage can be used for skyrmion-based logic devices, yielding new functionalities

Gate-Controlled Skyrmion Chirality

Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that this key parameter can be controlled by a gate voltage. We observed that the current-induced skyrmion motion can be reversed by the application of a gate voltage. This local and dynamical reversal of the skyrmion chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This gate-controlled chirality provides a local and dynamical degree of freedom, yielding new functionalities to skyrmion-based logic devices