20,629 research outputs found
Kondo Resonance Decoherence by an External Potential
The Kondo problem, for a quantum dot (QD), subjected to an external bias, is
analyzed in the limit of infinite Coulomb repulsion by using a consistent
equations of motion method based on a slave-boson Hamiltonian. Utilizing a
strict perturbative solution in the leads-dot coupling, T, to T^4 and T^6
orders, we calculate the QD spectral density and conductance, as well as the
decoherent rate that drive the systemm from the strong to the weak coupling
regime. Our results indicate thet the weak coupling regime is reached for
voltages larger than a few units of the Kondo temperature.Comment: 5 figure
A new Viola (Violaceae) from the Argentinian Andes
Viola beati, a hitherto unknown species of V. sect. Andinium (Violaceae) is described and illustrated. It is an inconspicuous, diminutive, perennial forb currently known from only one locality in NW Argentina. We draw attention to its morphology, ecology, rarity and endemism. The differences between V. beati and its apparently only close relative, V. singularis J. M. Watson & A. R. Flores, are defined
The two gap transitions in GeSn: effect of non-substitutional complex defects
The existence of non-substitutional -Sn defects in GeSn
was confirmed by emission channeling experiments [Decoster et al., Phys. Rev. B
81, 155204 (2010)], which established that although most Sn enters
substitutionally (-Sn) in the Ge lattice, a second significant fraction
corresponds to the Sn-vacancy defect complex in the split-vacancy configuration
( -Sn ), in agreement with our previous theoretical study [Ventura et
al., Phys. Rev. B 79, 155202 (2009)]. Here, we present our electronic structure
calculation for GeSn, including substitutional -Sn as
well as non-substitutional -Sn defects. To include the presence of
non-substitutional complex defects in the electronic structure calculation for
this multi-orbital alloy problem, we extended the approach for the purely
substitutional alloy by Jenkins and Dow [Jenkins and Dow, Phys. Rev. B 36, 7994
(1987)]. We employed an effective substitutional two-site cluster equivalent to
the real non-substitutional -Sn defect, which was determined by a
Green's functions calculation. We then calculated the electronic structure of
the effective alloy purely in terms of substitutional defects, embedding the
effective substitutional clusters in the lattice. Our results describe the two
transitions of the fundamental gap of GeSn as a function of the
total Sn-concentration: namely from an indirect to a direct gap, first, and the
metallization transition at higher . They also highlight the role of
-Sn in the reduction of the concentration range which corresponds to the
direct-gap phase of this alloy, of interest for optoelectronics applications.Comment: 11 pages, 9 Figure
Temperature and doping dependence of normal state spectral properties in a two-orbital model for ferropnictides
Using a second-order perturbative Green's functions approach we determined
the normal state single-particle spectral function
employing a minimal effective model for iron-based superconductors. The
microscopic model, used before to study magnetic fluctuations and
superconducting properties, includes the two effective tight-binding bands
proposed by S.Raghu et al. [Phys. Rev. B 77, 220503 (R) (2008)], and intra- and
inter-orbital local electronic correlations, related to the Fe-3d orbitals.
Here, we focus on the study of normal state electronic properties, in
particular the temperature and doping dependence of the total density of
states, , and of in different Brillouin zone
regions, and compare them to the existing angle resolved photoemission
spectroscopy (ARPES) and previous theoretical results in ferropnictides. We
obtain an asymmetric effect of electron and hole doping, quantitative agreement
with the experimental chemical potential shifts as a function of doping, as
well as spectral weight redistributions near the Fermi level as a function of
temperature consistent with the available experimental data. In addition, we
predict a non-trivial dependence of the total density of states with the
temperature, exhibiting clear renormalization effects by correlations.
Interestingly, investigating the origin of this predicted behaviour by
analyzing the evolution with temperature of the k-dependent self-energy
obtained in our approach, we could identify a number of specific Brillouin zone
points, none of them probed by ARPES experiments yet, where the largest
non-trivial effects of temperature on the renormalization are present.Comment: Manuscript accepted in Physics Letters A on Feb. 25, 201
Normal state electronic properties of LaOFBiS superconductors
A good description of the electronic structure of BiS-based
superconductors is essential to understand their phase diagram, normal state
and superconducting properties. To describe the first reports of normal state
electronic structure features from angle resolved photoemission spectroscopy
(ARPES) in LaOFBiS, we used a minimal microscopic model to
study their low energy properties. It includes the two effective tight-binding
bands proposed by Usui et al [Phys.Rev.B 86, 220501(R)(2012)], and we added
moderate intra- and inter-orbital electron correlations related to Bi-(,
) and S-(, ) orbitals. We calculated the electron Green's
functions using their equations of motion, which we decoupled in second-order
of perturbations on the correlations. We determined the normal state spectral
density function and total density of states for LaOFBiS,
focusing on the description of the k-dependence, effect of doping, and the
prediction of the temperature dependence of spectral properties. Including
moderate electron correlations, improves the description of the few
experimental ARPES and soft X-ray photoemission data available for
LaOFBiS. Our analytical approximation enabled us to
calculate the spectral density around the conduction band minimum at
, and to predict the temperature dependence of
the spectral properties at different BZ points, which might be verified by
temperature dependent ARPES.Comment: 9 figures. Manuscript accepted in Physica B: Condensed Matter on Jan.
25, 201
Signatures of rocky planet engulfment in HAT-P-4. Implications for chemical tagging studies
Aims. To explore the possible chemical signature of planet formation in the
binary system HAT-P-4, by studying abundance vs condensation temperature Tc
trends. The star HAT-P-4 hosts a planet detected by transits while its stellar
companion does not have any detected planet. We also study the Lithium content,
which could shed light on the problem of Li depletion in exoplanet host stars.
Conclusions. The exoplanet host star HAT-P-4 is found to be ~0.1 dex more metal
rich than its companion, which is one of the highest differences in metallicity
observed in similar systems. This could have important implications for
chemical tagging studies, disentangling groups of stars with a common origin.
We rule out a possible peculiar composition for each star as lambda Boo, delta
Scuti or a Blue Straggler. The star HAT-P-4 is enhanced in refractory elements
relative to volatile when compared to its stellar companion. Notably, the
Lithium abundance in HAT-P-4 is greater than in its companion by ~0.3 dex,
which is contrary to the model that explains the Lithium depletion by the
presence of planets. We propose a scenario where, at the time of planet
formation, the star HAT-P-4 locked the inner refractory material in
planetesimals and rocky planets, and formed the outer gas giant planet at a
greater distance. The refractories were then accreted onto the star, possibly
due to the migration of the giant planet. This explains the higher metallicity,
the higher Lithium content, and the negative Tc trend detected. A similar
scenario was recently proposed for the solar twin star HIP 68468, which is in
some aspects similar to HAT-P-4. We estimate a mass of at least Mrock ~ 10
Mearth locked in refractory material in order to reproduce the observed Tc
trends and metallicity.Comment: 5 pages, 6 figures, A&A Letters accepte
- …