Simple and Accurate Method for Microwave Noise Parameters Calculation

This paper proposes a new method for microwave two-port noise parameters values extraction. The method is based on a set of simple and accurate formulas witch allows the noise characterization without any optimization procedure. The measurements were performed using a system based on a short cascaded with a long transmission line and a passive two-port designed to exhibit versus frequency a behavior close to a transistor. The results presented for a measurement example show good agreement with those obtained using an optimization procedure. The new extraction method based on the frequency variation noise measurement principle and used with a simple hardware can be a practical tool for workers in the field

Comparative Study of Temperature Effect on Thin Film Solar Cells

The quaternary compound Cu2ZnSnS4 (CZTS) is considered as an alternative material to replace CIGS material in future manufacturing of thin film solar cells. In this paper, a comparative study of temperature effect on thin film CZTS (Cu2ZnSnS4) and CIGS (Cu(In, Ga)Se2) solar cells was leaded. For this purpose we used the one dimensional simulation program tool SCAPS-1D (Solar Cell Capacitance Simulator in one Dimension. The dependence of the CZTS and CIGS solar cells characteristics with temperature was investigated from 300°K to 360°K. The comparative results showed that the cell with CZTS had an improved behavior at high operation temperatures. The maximum power coefficients, depending on temperature variations, were respectively – 1.8 mW/cm2 °K and – 7.84 mW/cm2 °K

Optimum design of non-uniform symmetrical linear antenna arrays using a novel modified invasive weeds optimization

This paper presents a new modified method for the synthesis of non-uniform linear antenna arrays. Based on the recently developed invasive weeds optimization technique (IWO), the modified invasive weeds optimization method (MIWO) uses the mutation process for the calculation of standard deviation (SD). Since the good choice of SD is particularly important in such algorithm, MIWO uses new values of this parameter to optimize the spacing between the array elements, which can improve the overall efficiency of the classical IWO method in terms of side lobe level (SLL) suppression and nulls control. Numerical examples are presented and compared to the existing array designs found in the literature, such as ant colony optimization (ACO), particle swarm optimization (PSO), and comprehensive learning PSO (CLPSO). Results show that MIWO method can be a good alternative in the design of non-uniform linear antenna array

A spectroscopic charge pumping model in spice for the low dimensional MOSFET's

We have simulated the experimental spectroscopic charge pumping technique by the implementation of a model in the electrical simulator SPICE3F4. This model takes into account the temperature effect on the geometrical and electrical parameters of the studied transistor. The simulated results are in a good agreement with recent and different experimental results

Modeling of submicronic TMOS

We have developed a model of TMOS submicronic with ultra thin oxide layers as small as 4,5-nm in order to study MOSFET's output characteristics and its associated characterization facility for advanced integrated-circuit design are described. This model makes use of the SPICE3F4 simulator and takes in consideration the majority of the physical effects describing the device's real behavior. The validation of our model has provided us with results on the drain current I$_{\rm DS}$ versus drain voltage V$_{\rm DS}$. Our analysis and conclusions should be of interest to all who work with VLSI circuit technology

Characterization of interface traps on MOS transistor submicronic by the three level charge pumping

Because of its efficiency, its high precision and its easy use regarding to classical techniques of Si-Sio2 (C-V, DLTS, Conductance$\ldots$), interface characterization, the charge pumping technique has seen a large evolution these years. Many improvements have been made other, derivation techniques have been developed (at three-level charge pumping, spectroscopic charge pumping $\ldots$) This technique is particularly used for very slight geometry MOS transistors damaging, where other techniques have no utility. This damaging often leads to the creation of a fixed trapped charge in the oxide coat and active electronically defaults in the oxide Semi-conductor interface after the application of ageing constraint (ionizing radiation, injection carrier). This ageing is so pronounced when the dimensions are slight this represents the main obstacle that the microelectronics must face. In this article we simulate the three-level charge pumping technique with SPICE3F4 simulator. This simulation will permit the obtaining of spatial and energetic spread of defaults at the interface