177 research outputs found

    Dopant Spatial Distributions: Sample Independent Response Function And Maximum Entropy Reconstruction

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    We demonstrate the use of maximum entropy based deconvolution to reconstruct boron spatial distribution from the secondary ion mass spectrometry (SIMS) depth profiles on a system of variously spaced boron δ\delta-layers grown in silicon. Sample independent response functions are obtained using a new method which reduces the danger of incorporating real sample behaviour in the response. Although the original profiles of different primary ion energies appear quite differently, the reconstructed distributions agree well with each other. The depth resolution in the reconstructed data is increased significantly and segregation of boron at the near surface side of the δ\delta-layers is clearly shown.Comment: 5 two-columne pages, 3 postscript figures, to appear in Phys. Rev. B1

    Mass distributions and morphological and chemical characterization of urban aerosols in the continental Balkan area (Belgrade)

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    This work presents characteristics of atmospheric aerosols of urban central Balkans area, using a size-segregated aerosol sampling method, calculation of mass distributions, SEM/EDX characterization, and ICP/MS analysis. Three types of mass distributions were observed: distribution with a pronounced domination of coarse mode, bimodal distribution, and distribution with minimum at 1 μm describing the urban aerosol. SEM/EDX analyses have shown morphological difference and variation in the content of elements in samples. EDX spectra demonstrate that particles generally contain the following elements: Al, Ca, K, Fe, Mg, Ni, K, Si, S. Additionally, the presence of As, Br, Sn, and Zn found in air masses from southeast segment points out the anthropogenic activities most probably from mining activities in southeastern part of Serbia. The ratio Al/Si equivalent to the ratio of desert dust was associated with air masses coming from southeastern and southwestern segments, pointing to influences from North Africa and Middle East desert areas whereas the Al/Si ratio in other samples is significantly lower. In several samples, we found high values of aluminum in the nucleation mode. Samples with low share of crustal elements in the coarse mode are collected when Mediterranean air masses prevailed, while high share in the coarse mode was associated with continental air masses that could be one of the approaches for identification of the aerosol origin. Graphical abstract ᅟ.This work presents characteristics of atmospheric aerosols of urban central Balkans area, using a size-segregated aerosol sampling method, calculation of mass distributions, SEM/EDX characterization, and ICP/MS analysis. Three types of mass distributions were observed: distribution with a pronounced domination of coarse mode, bimodal distribution, and distribution with minimum at 1 mu m describing the urban aerosol. SEM/EDX analyses have shown morphological difference and variation in the content of elements in samples. EDX spectra demonstrate that particles generally contain the following elements: Al, Ca, K, Fe, Mg, Ni, K, Si, S. Additionally, the presence of As, Br, Sn, and Zn found in air masses from southeast segment points out the anthropogenic activities most probably from mining activities in southeastern part of Serbia. The ratio Al/Si equivalent to the ratio of desert dust was associated with air masses coming from southeastern and southwestern segments, pointing to influences from North Africa and Middle East desert areas whereas the Al/Si ratio in other samples is significantly lower. In several samples, we found high values of aluminum in the nucleation mode. Samples with low share of crustal elements in the coarse mode are collected when Mediterranean air masses prevailed, while high share in the coarse mode was associated with continental air masses that could be one of the approaches for identification of the aerosol origin

    Model calculation of ion collection in the presence of sputtering. I. Zero order approximation.

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    This paper presents a zero order approximation of ion collection during sputtering. Neglecting diffusion, range shortening and knock-on effects and assuming a constant sputtering yield general analytical results are developed which allow a comparison with experimental data. The accumulation of implantation profiles and the build-up of surface concentrations and collected quantities are described in detail for Gaussian range distributions. A thorough discussion of available experimental results indicates that the model is suitable for a variety of projectile-target combinations, in particular for medium mass noble gas atoms collected in high melting point targets. Application to sputtering experiments presents further evidence of a strong fluence dependence of the silicon sputtering yield. Some comments are devoted to recently reported analytical and numerical treatments of ion collection during sputtering

    Epithelverdickungen an der Endolymphseite derReissnersschen Membran

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    Determination of implantation profiles in solids by secondary ion mass spectrometry.

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    Secondary ion mass spectrometry has been applied to a determination of theprofile of 22 keV boron implanted in amorphous silicon. A Gaussian range distribution is observed with a projected range of 840 Å and a standard deviation of 340 Å

    A low background secondary ion mass spectrometer with quadrupole analyser.

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    A simple secondary ion mass spectrometer has been developed to allow trace analysis at impurity concentrations down to the parts per billion range. The spectrometer consists of an aperture bounded plate capacitor followed by a quadrupole mass flter with an off-axis detector. This arrangement allows suppression of sputtered neutrals and high energy sputtered or backscattered ions which otherwise produce a high background intensity of more than 1% of the target peak intensity in our set-up. After optimization of the geometry of the plate capacitor an intensity ratio of peak to background of 2 × 108 could be obtained for an aluminium specimen. The capability of the arrangement is demonstrated by trace analysis of boron in silicon. The process of background formation by neutrals and high energy ions is studied and discussed
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