70 research outputs found

    Interface steps in field effect devices

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    The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which in turn is screened by the doped carriers. We analyze the dipolar electronic structure of a single step in the Thomas-Fermi approximation and find that the transmission coefficient through the step is exponentially suppressed by the electric field and the induced carrier density as well as by the step height. In addition, the field enhancement at the step edge can facilitate the electric breakthrough of the insulating layer. We suggest that these two effects may lead to severe problems when engineering FET devices with very high doping. On the other hand steps can give rise to interesting physics in superconducting FETs by forming weak links and potentially creating atomic size Josephson junctions.Comment: 6 pages, 4 figures, submitted to J. Appl. Phy

    Magnetic pair-breaking in superconducting (Ba,K)BiO_3 investigated by magnetotunneling

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    The de Gennes and Maki theory of gapless superconductivity for dirty superconductors is used to interpret the tunneling measurements on the strongly type-II high-Tc oxide-superconductor Ba1-xKxBiO3 in high magnetic fields up to 30 Tesla. We show that this theory is applicable at all temperatures and in a wide range of magnetic fields starting from 50 percent of the upper critical field Bc2. In this magnetic field range the measured superconducting density of states (DOS) has the simple energy dependence as predicted by de Gennes from which the temperature dependence of the pair-breaking parameter alpha(T), or Bc2(T), has been obtained. The deduced temperature dependence of Bc2(T) follows the Werthamer-Helfand-Hohenberg prediction for classical type-II superconductors in agreement with our previous direct determination. The amplitudes of the deviations in the DOS depend on the magnetic field via the spatially averaged superconducting order parameter which has a square-root dependence on the magnetic field. Finally, the second Ginzburg-Landau parameter kappa2(T) has been determined from the experimental data.Comment: 11 pages, 5 figure

    Anomalous magnetic field dependence of the thermodynamic transition line in the isotropic superconductor (K,Ba)Bi03

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    Thermodynamic (specific heat, reversible magnetization, tunneling spectroscopy) and transport measurements have been performed on high quality (K,Ba)BiO3_3 single crystals. The temperature dependence of the magnetic field HCpH_{Cp} corresponding to the onset of the specific heat anomaly presents a clear positive curvature. HCpH_{Cp} is significantly smaller than the field HΔH_\Delta for which the superconducting gap vanishes but is closely related to the irreversibility line deduced from transport data. Moreover, the temperature dependence of the reversible magnetization present a strong deviation from the Ginzburg--Landau theory emphasazing the peculiar nature of the superconducting transition in this material.Comment: 4 pages, 4 figures, 28 reference

    Evidence for Nodal superconductivity in Sr2_{2}ScFePO3_{3}

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    Point contact Andreev reflection spectra have been taken as a function of temperature and magnetic field on the polycrystalline form of the newly discovered iron-based superconductor Sr2ScFePO3. A zero bias conductance peak which disappears at the superconducting transition temperature, dominates all of the spectra. Data taken in high magnetic fields show that this feature survives until 7T at 2K and a flattening of the feature is observed in some contacts. Here we inspect whether these observations can be interpreted within a d-wave, or nodal order parameter framework which would be consistent with the recent theoretical model where the height of the P in the Fe-P-Fe plane is key to the symmetry of the superconductivity. However, in polycrystalline samples care must be taken when examining Andreev spectra to eliminate or take into account artefacts associated with the possible effects of Josephson junctions and random alignment of grains.Comment: Published versio

    Anisotropy of the Upper Critical Field and Critical Current in Single Crystal MgB2_2

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    We report on specific heat, high magnetic field transport and acac-susceptibility measurements on magnesium diboride single crystals. The upper critical field Hc2H_{c2} for magnetic fields perpendicular and parallel to the Mg and B planes is presented for the first time in the entire temperature range. A very different temperature dependence has been observed in the two directions which yields to a temperature dependent anisotropy with Γ\Gamma \sim 5 at low temperatures and about 2 near TcT_c. A peak effect is observed in susceptibility measurements for HH \sim 2 T parallel to the cc-axis and the critical current density presnts a sharp maximum for HH parallel to the ab-plane.Comment: 6 pages, 5 figure

    The optical response of Ba_{1-x}K_xBiO_3: Evidence for an unusual coupling mechanism of superconductivity?

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    We have analysed optical reflectivity data for Ba_{1-x}K_xBiO_3 in the far-infrared region using Migdal-Eliashberg theory and found it inconsistent with standard electron-phonon coupling: Whereas the superconducting state data could be explained using moderate coupling, \lambda=0.7, the normal state properties indicate \lambda \le 0.2. We have found that such behaviour could be understood using a simple model consisting of weak standard electron-phonon coupling plus weak coupling to an unspecified high energy excitation near 0.4 eV. This model is found to be in general agreement with the reflectivity data, except for the predicted superconducting gap size. The additional high energy excitation suggests that the dominant coupling mechanism in Ba_{1-x}K_xBiO_3 is not standard electron-phonon.Comment: 5 pages REVTex, 5 figures, 32 refs, accepted for publication in Phys. Rev.

    Momentum-resolved superconducting gap in the bulk of Ba1x_{1-x}Kx_{x}Fe2_2As2_2 from combined ARPES and μ\muSR measurements

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    Here we present a calculation of the temperature-dependent London penetration depth, λ(T)\lambda(T), in Ba1x_{1-x}Kx_{x}Fe2_2As2_2 (BKFA) on the basis of the electronic band structure [1,2] and momentum-dependent superconducting gap [3] extracted from angle-resolved photoemission spectroscopy (ARPES) data. The results are compared to the direct measurements of λ(T)\lambda(T) by muon spin rotation (μ\muSR) [4]. The value of λ(T=0)\lambda(T=0), calculated with \emph{no} adjustable parameters, equals 270 nm, while the directly measured one is 320 nm; the temperature dependence λ(T)\lambda(T) is also easily reproduced. Such agreement between the two completely different approaches allows us to conclude that ARPES studies of BKFA are bulk-representative. Our review of the available experimental studies of the superconducting gap in the new iron-based superconductors in general allows us to state that all hole-doped of them bear two nearly isotropic gaps with coupling constants 2Δ/kBTc=2.5±1.52\Delta/k_{\rm B}T_{\rm c}=2.5\pm1.5 and 7±27\pm2

    Suspended dry pick-up and flip-over assembly for van der Waals heterostructures with ultra-clean surfaces

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    Van der Waals heterostructures are an excellent platform for studying intriguing interface phenomena, such as moir\'e and proximity effects. Surface science techniques like scanning tunneling microscopy (STM) have proven a powerful tool to study such heterostructures but have so far been hampered because of their high sensitivity to surface contamination. Here, we report a dry polymer-based assembly technique to fabricate van der Waals heterostructures with atomically clean surfaces. The key features of our suspended dry pick-up and flip-over technique are 1) the heterostructure surface never comes into contact with polymers, 2) it is entirely solvent-free, 3) it is entirely performed in a glovebox, and 4) it only requires temperatures below 130^{\circ}. By performing ambient atomic force microscopy and atomically-resolved scanning tunneling microscopy on example heterostructures, we demonstrate that we can fabricate air-sensitive heterostructures with ultra-clean interfaces and surfaces. Due to the lack of polymer melting, the technique is further compatible with heterostructure assembly under ultra-high vacuum conditions, which promises ultimate heterostructure quality
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