23 research outputs found

    Practical quantum realization of the ampere from the electron charge

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    One major change of the future revision of the International System of Units (SI) is a new definition of the ampere based on the elementary charge \emph{e}. Replacing the former definition based on Amp\`ere's force law will allow one to fully benefit from quantum physics to realize the ampere. However, a quantum realization of the ampere from \emph{e}, accurate to within 10−810^{-8} in relative value and fulfilling traceability needs, is still missing despite many efforts have been spent for the development of single-electron tunneling devices. Starting again with Ohm's law, applied here in a quantum circuit combining the quantum Hall resistance and Josephson voltage standards with a superconducting cryogenic amplifier, we report on a practical and universal programmable quantum current generator. We demonstrate that currents generated in the milliampere range are quantized in terms of efJef_\mathrm{J} (fJf_\mathrm{J} is the Josephson frequency) with a measurement uncertainty of 10−810^{-8}. This new quantum current source, able to deliver such accurate currents down to the microampere range, can greatly improve the current measurement traceability, as demonstrated with the calibrations of digital ammeters. Beyond, it opens the way to further developments in metrology and in fundamental physics, such as a quantum multimeter or new accurate comparisons to single electron pumps.Comment: 15 pages, 4 figure

    Quantum Hall effect in exfoliated graphene affected by charged impurities: metrological measurements

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    Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-μm\mu\mathrm{m}-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene transferred on Si/SiO2\textrm{Si/SiO}_{2} substrate. From the charge carrier density dependence of the conductivity and from the measurement of the quantum corrections at low magnetic field, we deduce that transport properties in these devices are mainly governed by the Coulomb interaction of carriers with a large concentration of charged impurities. In the QHE regime, at high magnetic field and low temperature (T<1.3KT<1.3 \textrm{K}), the Hall resistance is measured by comparison with a GaAs based quantum resistance standard using a cryogenic current comparator. In the low dissipation limit, it is found quantized within 5 parts in 10710^{7} (one standard deviation, 1σ1 \sigma) at the expected rational fractions of the von Klitzing constant, respectively RK/2R_{\mathrm{K}}/2 and RK/4R_{\mathrm{K}}/4 in the ML and BL devices. These results constitute the most accurate QHE quantization tests to date in monolayer and bilayer exfoliated graphene. It turns out that a main limitation to the quantization accuracy, which is found well above the 10−910^{-9} accuracy usually achieved in GaAs, is the low value of the QHE breakdown current being no more than 1μA1 \mu\mathrm{A}. The current dependence of the longitudinal conductivity investigated in the BL Hall bar shows that dissipation occurs through quasi-elastic inter-Landau level scattering, assisted by large local electric fields. We propose that charged impurities are responsible for an enhancement of such inter-Landau level transition rate and cause small breakdown currents.Comment: 14 pages, 9 figure

    Basal and stress-induced corticosterone secretion is decreased by lesion of mesencephalic dopaminergic neurons.

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    There is evidence that certain psychopathological conditions are accompanied by a dysfunction in both the hypothalamo-pituitary-adrenal axis and dopaminergic systems, although the relationship between these two systems is as yet unclear. In the present study we investigated the effect of a specific lesion of dopamine mesencephalic neurons (Ventral Tegmental Area) on basal and stress-induced corticosterone secretion. Three weeks after injection of 6-OHDA, there was a depletion in dopamine in the frontal cortex and in the ventral and dorsal striatum, whereas norepinephrine and serotonin levels were unchanged. The dopamine-lesioned rats exhibited a lower basal and stress-induced corticosterone secretion than the sham-lesioned animals. The results indicate that the dopaminergic system may have a stimulatory influence on the hypothalamo-pituitary-adrenal axis

    THE MESOLIMBIC DOPAMINERGIC SYSTEM EXERTS AN INHIBITORY INFLUENCE ON BRAIN CORTICOSTEROID RECEPTOR AFFINITIES

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    Central type I and type II corticosteroid receptors play a principle role in the regulation of corticosterone secretion. Although the binding capacity of these receptors is thought to be regulated essentially hormonally, there is also evidence for a direct neural control. For example, experimental manipulation of central serotoninergic and noradrenergic activities modifies the binding capacity of type I and type II corticosteroid receptors via a corticosterone-independent mechanism. In this study, we tested the effect of lesions of dopaminergic neurons in the ventral tegmental area on corticosteroid receptor binding capacity. The study was performed in adrenalectomized rats whose corticosterone levels were maintained within normal limits by corticosterone pellets and corticosterone in their drinking water during the dark period to generate the circadian rhythm. Binding properties of corticosteroid receptors were analysed in target regions of the lesioned neurons, including the ventral and dorsal striatum. Corticosteroid receptors in the hippocampus were also studied as a control as these lesions do not significantly affect dopamine content in this structure. Three weeks after the lesion, type II corticosteroid receptor affinity was increased in the ventral striatum. There was no effect on receptors in the dorsal striatum or hippocampus. Our results, together with other reports showing that dopamine inhibits the expression of corticosteroid receptors in the anterior pituitary, suggest that dopamine transmission exerts a negative control on central corticosteroid receptors
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