Dark states of single NV centers in diamond unraveled by single shot NMR

The nitrogen-vacancy (NV) center in diamond is supposed to be a building block for quantum computing and nanometer scale metrology at ambient conditions. Therefore, precise knowledge of its quantum states is crucial. Here, we experimentally show that under usual operating conditions the NV exists in an equilibrium of two charge states (70% in the expected negative (NV-) and 30% in the neutral one (NV0)). Projective quantum non-demolition measurement of the nitrogen nuclear spin enables the detection even of the additional, optically inactive state. The nuclear spin can be coherently driven also in NV0 (T1 ~ 90 ms and T2 ~ 6 micro-s).Comment: 4 pages, 3 figure

Photo induced ionization dynamics of the nitrogen vacancy defect in diamond investigated by single shot charge state detection

The nitrogen-vacancy centre (NV) has drawn much attention for over a decade, yet detailed knowledge of the photophysics needs to be established. Under typical conditions, the NV can have two stable charge states, negative (NV-) or neutral (NV0), with photo induced interconversion of these two states. Here, we present detailed studies of the ionization dynamics of single NV centres in bulk diamond at room temperature during illumination in dependence of the excitation wavelength and power. We apply a recent method which allows us to directly measure the charge state of a single NV centre, and observe its temporal evolution. Results of this work are the steady state NV- population, which was found to be always < 75% for 450 to 610 nm excitation wavelength, the relative absorption cross-section of NV- for 540 to 610 nm, and the energy of the NV- ground state of 2.6 eV below the conduction band. These results will help to further understand the photo-physics of the NV centre.Comment: 9 pages, 7 figure

Science Alive!: Connecting with Elementary Students through Science Exploration

A novel program called Science Alive! was developed by undergraduate faculty members, K–12 school teachers, and undergraduate students to enrich science, technology, engineering, and mathematics (STEM) literacy at community schools located near the university. The ultimate goal of the program is to bolster the scientific knowledge and appreciation of local area students and community members and serve as a model for similar programs. Through the program, we observed that elementary school students made gains toward learning their grade-level science curricula after a hands-on learning experience and had fun doing these hands-on activities. Through the program, undergraduate students, working with graduate students and alumni, build scientific learning modules using explanatory handouts and creative activities as classroom exercises. This helps better integrate scientific education through a collaborative, hands-on learning program. Results showed that elementary school students made the highest learning gains in their performance on higher-level questions related to both forces and matter as a result of the hands-on learning modules. Additionally, college students enjoyed the hands-on activities, would consider volunteering their time at such future events, and saw the service learning program as a benefit to their professional development through community building and discipline-specific service. The science modules were developed according to grade-level curricular standards and can be used year after year to teach or explain a scientific topic to elementary school students via a hands-on learning approach

The Principles of Social Order. Selected Essays of Lon L. Fuller, edited With an introduction by Kenneth I. Winston

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields

Carbon antisite clusters in SiC: a possible pathway to the D_{II} center

The photoluminescence center D_{II} is a persistent intrinsic defect which is common in all SiC polytypes. Its fingerprints are the characteristic phonon replicas in luminescence spectra. We perform ab-initio calculations of vibrational spectra for various defect complexes and find that carbon antisite clusters exhibit vibrational modes in the frequency range of the D_{II} spectrum. The clusters possess very high binding energies which guarantee their thermal stability--a known feature of the D_{II} center. The di-carbon antisite (C_{2})_{Si} (two carbon atoms sharing a silicon site) is an important building block of these clusters.Comment: RevTeX 4, 6 pages, 3 figures Changes in version 2: Section headings, footnote included in text, vibrational data now given for neutral split-interstitial, extended discussion of the [(C_2)_Si]_2 defect incl. figure Changes version 3: Correction of binding energy for 3rd and 4th carbon atom at antisite; correction of typo