Cathodoluminescence And Structural Studies Of Nitrided 3d Gallium Structures Grown By Mocvd

Cathodoluminescence (CL) spectrum imaging and grazing incidence X-ray diffraction (GIXRD) are employed to investigate nitride three-dimensional (3D) gallium structures. The metallic precursors are naturally obtained on a large variety of substrates by metal-organic chemical vapor deposition (CVD) with different shape/size controlled by the growth conditions, especially the temperature. These 3D metallic structures are subsequently exposed to a nitridation process in a conventional CVD reactor to form GaN nanocrystals, as confirmed by GIXRD measurements. CL spectroscopy shows visible light emission (2.5-2.8 eV) excited from the GaN in the 3D structures. © 2008 Elsevier B.V.1293176180Levi, B.G., (1996) Phys. Today, 49, p. 18Johnson, N.M., Nurmikko, A.V., DenBaars, S.P., (2000) Phys. Today, 53, p. 31Beaumont, B., Vennéguès, Ph., Gibart, P., (2001) Phys. Stat. Sol. B, 227, p. 1Viste, P., Colombier, I., Donatini, F., Vial, J.C., Baldeck, P., Herino, R., Duc-Maugé, A., Sacilotti, M., (2004) J. Cryst. Growth, 272, p. 466Sacilotti, M., Imhoff, L., Viste, P., Dumas, C., Vial, J.C., Baldeck, P., Colombier, I., Donatini, F., (2004) Jpn. J. Appl. Phys., 43, pp. L698Sacilotti, M., Decobert, J., Sick, H., Post, G., Viste, P., Dumas, C., Patriarche, G., (2004) J. Cryst. Growth, 272, p. 198Nakaema, M.K.K., Godoy, M.P.F., Brasil, M.J.S.P., Iikawa, F., Silva, D., Sacilotti, M., Decobert, J., Patriarche, G., (2005) J. Appl. Phys., 98, p. 053506Chiaramonte, Th., Patriarche, G., Decobert, J., Cardoso, L.P., Sacilotti, M., (2005) Nanotechnology, 16, p. 2790Sacilotti, M., Imhoff, L., Bourgeois, S., Dumas, C., Decobert, J., Baldeck, P., Colombier, I., (2004) J. Cryst. Growth, 261, p. 253Haffouz, S., Hageman, P., Kirilyuk, V., Macht, L., Weyher, J., Larsen, P., (2003) Mater. Sci. Eng. B, 97Chandrasekaran, H., Sunkara, M., MRS proceedings (2001) GaN and Related Alloys, 13, p. 30. , Northrup J.E., Neugebauer J., Chichibu S.F., and Look D.C. (Eds)Duan, X., Lib!e, C., (2000) J. Am. Chem. Soc., 122, p. 188Decobert, J., Patriarche, G., (2002) J. Appl. Phys., 92, p. 5749Romero, M.J., Ramanathan, K., Contreras, M.A., Al-Jassim, M.M., Noufi, R., Sheldon, P., (2003) Appl. Phys. Lett., 83, p. 4770Widmann, F., Simon, J., Pelekanos, N.T., Daudin, B., Feuillet, G., Rouvière, J.L., Fishman, G., (1999) Microelectron J., 30, p. 353Wagner, R., Ellis, W., (1964) Appl. Phys. Lett., 4, p. 89Pinault, M., Pichot, V., Khodja, H., Launois, P., Reynaud, C., L'Hermite, M., (2005) Nano Lett., 5, p. 2394Newman, N., Ross, J., Rubin, M., (1993) Appl. Phys. Lett., 62, p. 1242Le Flohic, M., (2001) Photoniques, 1, p. 2

X-ray Multiple Diffraction In The Characterization Of Tino And Tio2 Thin Films Grown On Si(0 0 1)

TiO2 and TiNxOy thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO2[1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate (-80 Å/min) of TiO2 and (-40 Å/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., φ{symbol}-scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained. © 2006 Elsevier B.V. All rights reserved.253315901594Buiting, M.J., Oterloo, A.F., (1992) J. Electrochem. Soc., 139, p. 2580Staia, M.H., Cervantes, C., Viloria, S., (1995) Surf. Coat. Technol., 72, p. 500Buiting, M.J., Oterloo, A.F., Montree, A.H., (1991) J. Electrochem. Soc., 138, p. 500Hedge, R.I., Tobin, P.J., Fiordalice, R.W., Travis, E.O., (1993) J. Vac. Sci. Technol. A, 11, p. 1692Fabreguette, F., Imhoff, L., Guillot, J., (2000) Surf. Coat. Technol., 125, p. 396Granier, B., Chatillon, C., Allibert, M., (1982) J. Am. Ceram. Soc., 65, p. 465Fabreguette, F., Maglione, M., Imhoff, L., (2001) Appl. Surf. Sci., 6881, p. 1Chiaramonte, T., Cardoso, L.P., Gelamo, R.V., Fabreguette, F., Sacilotti, M., Imhoff, L., Bourgeois, S., Marco de Lucas, M.C., (2003) Appl. Surf. Sci., 212-213, pp. 661-666Avanci, L.H., Cardoso, L.P., Girdwood, S.E., Pugh, D., Sherwood, J.N., Roberts, K.J., (1998) Phys. Rev. Lett., 81 (24), pp. 5426-5429Morelhao, S.L., Cardoso, L.P., (1996) J. Appl. Cryst., 29, p. 446Renninger, M., (1937) Z. Phys., 106, pp. 141-176Morelhão, S.L., Cardoso, L.P., (1992) Mater. Res. Soc. Symp. Proc., 262, pp. 175-180Morelhão, S.L., Avanci, L.H., Cardoso, L.P., (1995) Mater. Res. Soc. Symp. Proc., 355, pp. 215-220Cole, H., Chambers, F.W., Dunn, H.M., (1962) Acta Cryst., 15, p. 138Fabreguette, F., Maglione, M., Imhoff, L., (2000) Chem. Vap. Deposition, 6, p. 109Bauer, G., Richter, W., (1996) Optical Characterization of Epitaxial Semiconductor Layers, , Springer-Verlag, Berlin, Heidelberg, New YorkDoener, M.F., Brennan, S., (1988) J. Appl. Phys., 63, p. 12

Cathodoluminescence and structural studies of nitrided 3D gallium structures grown by MOCVD

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Cathodoluminescence (CL) spectrum imaging and grazing incidence X-ray diffraction (GIXRD) are employed to investigate nitride three-dimensional (3D) gallium structures. The metallic precursors are naturally obtained on a large variety of substrates by metal-organic chemical vapor deposition (CVD) with different shape/size controlled by the growth conditions, especially the temperature. These 3D metallic structures are subsequently exposed to a nitridation process in a conventional CVD reactor to form GaN nanocrystals, as confirmed by GIXRD measurements. CL spectroscopy shows visible light emission (2.5-2.8 eV) excited from the GaN in the 3D structures. (C) 2008 Elsevier B.V. All rights reserved.1293176180ANR-Filemon 3-5 FranceConseil Regional de Bourgogne-FranceConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Department of Energy [DE-AC36-99GO10337]Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Department of Energy [DE-AC36-99GO10337

X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(001)

TiO2 and TiNxOy thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(001) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO2[1 1 0] and TiNO[ 1 0 0] polycrystalline layers allowed to determine the growth rate (-80 angstrom/min) of TiO2 and (-40 angstrom/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., phi-scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained. (c) 2006 Elsevier B.V. All rights reserved.25331590159

Anisotropic and non-heterogeneous continuum percolation in titanium oxynitride thin columnar films

International audienceWe report the percolation behaviour of the conductivity of titanium oxynitride films grown by low-pressure metal-organic chemical vapour deposition, composed of TiNxOy mixed with TiO2. The usual DC parameters (t, s and Φc), obtained from the effective media theory equations, are compared to the universal values (s = sun while t < tun because of the film anisotropy). This is the first example of an electrical continuum percolation applied to columnar films with chemically similar conducting and insulating units (non-heterogeneous percolation) whose mixing is based upon the growth temperature during the film growth

Structural Characterization Of Tinxoy/tio2 Single Crystalline And Nanometric Multilayers Grown By Lp-mocvd On (110)tio2

TiO2/TiNxOy superlattices were grown by Low Pressure-Metal-Organic Vapor Phase Epitaxy (LP-MOVPE) technique at deposition temperatures ranking from 650 to 750°C. The growth was performed on top of TiO2(110) rutile substrates. Intense peaks observed in the X-rays rocking curves and θ-2θ diffraction patterns show the presence of crystalline epilayers. The TiNxOy layers were grown in a (200) cubic structure on the (110) quadratic TiO2 epilayer structure. Transmission electron microscopy confirmed the XRD results and showed the formation of periodic and well structured epilayers. © 2001 Elsevier Science B.V. All rights reserved.4001-2125129Ting, C., (1984) Thin Solid Films, 119, p. 11Buiting, M.J., Otterloo, A.F., (1992) J. Electrochem. Soc., 139, p. 2580Lazarov, M., Raths, P., Metzger, H., Spirkl, W., (1995) J. Appl. Phys., 77, p. 2133Oyama, T., Ohsaki, H., Tachibana, Y., Hayashi, Y., Ono, Y., Hori, N., (1999) Thin Solid Films, 351, p. 235Fabreguette, F., Imhoff, L., Guillot, J., (2000) Surface Coatings Technol., 125, p. 396Granier, B., Chatillon, C., Allibert, M., (1982) J. Am. Ceram. Soc., 65, p. 465Fabreguette, F., Maglione, M., Imhoff, L., (2001) Appl. Surf. Sci., 6881, p. 1Marco de Lucas, M.C., Fabreguette, F., Collin, S., Bourgeois, S., (2000) Int. J. Inorg. Mat., 2, p. 255Gao, Y., Merkle, K., Chang, H., Zhang, T., Lam, D., (1991) Mat. Res. Soc. Symp. Proc., 209, p. 685Fabreguette, F., Maglione, M., Imhoff, L., (2000) Chem. Vapor Deposition, 6, p. 109Mattews, J., Blakeslee, A., (1974) J. Crystal Growth, 27, p. 118Rozgonui, G.A., Ciesielka, T.J., (1973) Rev. Sci. Instrum., 44, p. 1053Segmuller, A., Angilelo, A., La Placa, S., (1980) J. Appl. Phys., 51, p. 622

Structural characterization of TiO2/TiN O (δ-doping) heterostructures on (1 1 0)TiO2 substrates

International audienc

Structural Characterization Of Tio2/tinxoy (δ-doping) Heterostructures On (1 1 0)tio2 Substrates

TiO2/TiNxOy δ-doping structures were grown on the top of (110)TiO2 rutile substrates by low pressure metal-organic vapor phase epitaxy (LP-MOVPE) technique at 750°C. The samples were analyzed by high resolution transmission electron microscopy (HRTEM), electron energy loss spectroscopy (EELS) and X-ray diffraction techniques (rocking curves and φ-scans). The presence of satellites in the (110)TiO2 rocking curve revealed the epitaxial growth of 10 period δ-doping structures. The thickness of the TiO2 layers, 84nm, was deduced from the satellites period. HRTEM observations showed around 1.5nm thick δ-doping layers, where the presence of nitrogen was detected by EELS. The analysis of the Bragg surface diffraction peaks observed in the φ-scans points to an almost negligible strain in this sample which was confirmed by substrate curvature radius measurements. © 2003 Elsevier Science B.V. All rights reserved.212-213SPEC.661666Ting, C., (1984) Thin Solid Films, 119, p. 11Buiting, M.J., Otterloo, A.F., (1992) J. Electrochem. Soc., 139, p. 2580Lazarov, M., Raths, P., Metzger, H., Spirkl, W., (1995) J. Appl. Phys., 77, p. 2133Fabreguette, F., Imhoff, L., Guillot, J., (2000) Surf. Coat. Technol., 125, p. 396Granier, B., Chatillon, C., Allibert, M., (1982) J. Am. Ceram. Soc., 65, p. 465Fabreguette, F., Maglione, M., Imhoff, L., (2001) Appl. Surf. Sci., 6881, p. 1Chang, T.C., Liu, P.T., Yang, Y.L., Hu, J.C., Sze, S., (2000) Jpn. J. Appl. Phys., 39, pp. L82Madan, A., Yashar, P., Shinn, M., Barnett, S.A., (1997) Thin Solid Films, 302, p. 147Jensen, H., Sobota, J., Sorensen, G., (2000) J. Vac. Sci. Technol., 124, p. 210Fabreguette, F., Imhoff, L., (2001) Appl. Surf. Sci., 175-176, p. 685Fabreguette, F., Guillot, J., (2001) Thin Solid Films, 400, p. 125Fabreguette, F., Maglione, M., Imhoff, L., (2000) Chem. Vapor Deposition, 6, p. 109Guillot, J., (2002), PhD Thesis, Université de BourgogneRozgonyi, G.A., Ciesielka, T.J., (1973) Rev. Sci. Instrum., 44, p. 1053Segmuller, A., Angilelo, A., La Placa, S., (1980) J. Appl. Phys., 51, p. 6224Chang, S.L., (1984) Multiple Diffraction of X-Rays in Crystals, , H.J. Queisser (Ed.), Springer, BerlinMorelhão, S.L., Cardoso, L.P., (1992) Mat. Res. Soc. Symp. Proc., 262, p. 175Morelhão, S.L., Cardoso, L.P., (1993) J. Appl. Phys., 73 (9), p. 421