Microcrystalline silicon solar cells: effect of substrate temperature on cracks and their role in post-oxidation

Microcrystalline silicon (mc-Si:H) cells can reach efficiencies up to typically 10% and are usually incorporated in tandem micromorph devices. When cells are grown on rough substrates, ‘‘cracks’’ can appear in the mc-Si:H layers. Previous works have demonstrated that these cracks have mainly detrimental effects on the fill factor and open-circuit voltage, and act as bad diodes with a high reverse saturation current. In this paper, we clarify the nature of the cracks, their role in postoxidation processes, and indicate how their density can be reduced. Regular secondary ion mass spectrometry (SIMS) and local nano-SIMS measurements show that these cracks are prone to local post-oxidation and lead to apparent high oxygen content in the layer. Usually the number of cracks can be decreased with an appropriate modification of the substrate surface morphology, but then, the required light scattering effect is reduced due to a lower roughness. This study presents an alternative/complementary way to decrease the crack density by increasing the substrate temperature during deposition. These results, also obtained when performing numerical simulation of the growth process, are attributed to the enhanced surface diffusion of the adatoms at higher deposition temperature. We evaluate the cracks density by introducing a fast method to count cracks with good statistics over approximately 4000 mm of sample cross-section. This method is proven to be useful to quickly visualize the impact of substrate morphology on the density of cracks in microcrystalline and in micromorph devices, which is an important issue in the manufacturing process of modules. Copyright#2010 John Wiley & Sons, Ltd

Micromorph tandem solar cells grown at high rate with in-situ intermediate reflector in industrial KAI PECVD reactors

We report on the latest results of tandem micromorph (a-Si:H/μc-Si:H) silicon solar cells fabricated in commercial Oerlikon Solar KAI-S and KAI-M PECVD reactors. First developments of in-situ silicon oxide based intermediate reflector (SOIR) in KAI reactors are as well presented. Under low depletion conditions (silane concentration 1cm2, with a deposition rate of 0.55 nm/s for microcrystalline silicon and an ex-situ silicon oxide-based intermediate reflector (SOIR). Under high depletion conditions, the growth rate could be raised up to 1.2 nm/s, in a modified KAI-M reactor, and the highest initial efficiency reached so far is 9.7% with in-situ SOIR and top cell thickness of ∼ 230 nm. Promising micromorph solar cells are thus produced under conditions that are highly favorable to low-cost fabrication of tandem modules at an industrial level

LATEST DEVELOPMENTS ON MICROMORPH TANDEM CELLS AT IMT

The latest developments on micromorph tandem cells in small area laboratory and large area industrial PE-CVD systems are reviewed. We report on a 13.3% initial efficiency micromorph tandem cell deposited in our small area system. The development of an in-situ silicon oxide based intermediate reflector layer (SOIR) was essential in order to achieve such high efficiencies. We describe its detailed material structure and discuss optical management aspects for different cell configurations. In our large area industrial R&D reactor the highest efficiency so far obtained is a 11.0% initial efficiency micromorph tandem cell. We discuss in detail the role of pressure and silane depletion on the cell parameters of single junction microcrystalline cells and present efficiency trends decreasing from 8.2% to 7.0% with deposition rates increasing from 0.3 nm/s to 1.2 nm/s

An overview of snow photochemistry: Evidence, mechanisms and impacts

It has been shown that sunlit snow and ice plays an important role in processing atmospheric species. Photochemical production of a variety of chemicals has recently been reported to occur in snow/ice and the release of these photochemically generated species may significantly impact the chemistry of the overlying atmosphere. Nitrogen oxide and oxidant precursor fluxes have been measured in a number of snow covered environments, where in some cases the emissions significantly impact the overlying boundary layer. For example, photochemical ozone production (such as that occurring in polluted mid-latitudes) of 3-4 ppbv/day has been observed at South Pole, due to high OH and NO levels present in a relatively shallow boundary layer. Field and laboratory experiments have determined that the origin of the observed NO x flux is the photochemistry of nitrate within the snowpack, however some details of the mechanism have not yet been elucidated. A variety of low molecular weight organic compounds have been shown to be emitted from sunlit snowpacks, the source of which has been proposed to be either direct or indirect photo-oxidation of natural organic materials present in the snow. Although myriad studies have observed active processing of species within irradiated snowpacks, the fundamental chemistry occurring remains poorly understood. Here we consider the nature of snow at a fundamental, physical level; photochemical processes within snow and the caveats needed for comparison to atmospheric photochemistry; our current understanding of nitrogen, oxidant, halogen and organic photochemistry within snow; the current limitations faced by the field and implications for the future

Kinetics of isothermal and non-isothermal precipitation in an Al-6at%Si alloy

A novel theory which describes the progress of a thermally activated reaction under isothermal and linear heating conditions is presented. It incorporates nucleation, growth and impingement and takes account of temperaturedependent solubility. The model generally fits very well to isothermal calorimetry and differential scanning calorimetry data on precipitation in an Al-6 at.% Si alloy. Analysis of the data shows that two processes occur in this precipitation reaction: growth of large Si particles and growth of pre-existing small nuclei. Determination of the sizes of Si precipitates by transmission electron microscopy indicates that interfacial energy contributions are small and have a negligible influence on solubilit

Research and developments in thin film silicon photovoltaics

The increasing demand for photovoltaic devices and the associated crystalline silicon feedstock demand scenario have led in the past years to the fast growth of the thin film silicon industry. The high potential for cost reduction and the suitability for building integration have initiated both industrial and research laboratories dynamisms for amorphous silicon and micro-crystalline silicon based photovoltaic technologies. The recent progress towards higher efficiencies thin film silicon solar cells obtained at the IMT-EPFL in Neuchatel in small-area laboratory and semi-large-area industrial Plasma Enhanced Chemical Vapor Deposition (PE-CVD) systems are reviewed. Advanced light trapping schemes are fundamental to reach high conversion efficiency and the potential of advanced Transparent Conductive Oxides (TCO) is presented, together with issues associated to the impact of the substrate morphology onto the growth of the silicon films. The recent improvements realized in amorphous-microcrystalline tandem solar cells on glass substrate are then presented, and the latest results on 1 cm2 cells are reported with up to 13.3 % initial efficiency for small-area reactors and up to 12.3 % initial for large-area industrial reactors. Finally, the different strategies to reach an improved light confinement in a thin film solar cell deposited on a flexible substrate are discussed, with the incorporation of asymmetric intermediate reflectors. Results of micromorph solar cells in the n-i-p configuration with up to 9.8 % stabilized efficiency are reported

ZnO Transparent conductive oxide for thin film silicon solar cells

There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively