Current-voltage correlations in interferometers

We investigate correlations of current at contacts and voltage fluctuations at voltage probes coupled to interferometers. The results are compared with correlations of current and occupation number fluctuations at dephasing probes. We use a quantum Langevin approach for the average quantities and their fluctuations. For higher order correlations we develop a stochastic path integral approach and find the generating functions of voltage or occupation number fluctuations. We also derive a generating function for the joint distribution of voltage or occupation number at the probe and current fluctuations at a terminal of a conductor. For energy independent scattering we found earlier that the generating function of current cumulants in interferometers with a one-channel dephasing or voltage probe are identical. Nevertheless, the distribution function for voltage and the distribution function for occupation number fluctuations differ, the latter being broader than that of former in all examples considered here.Comment: 23 pages, 10 figures, minor changes, additional appendix, added reference

Review of SIS Experimental Results on Strangeness

>A review of meson emission in heavy ion collisions at incident energies around 1 -- 2 $A\cdot$GeV is presented. It is shown how the shape of the spectra and the various particle yields vary with system size, with centrality and with incident energy. A statistical model assuming thermal and chemical equilibrium and exact strangeness conservation (i.e. strangeness conservation per collision) explains most of the observed features. Emphasis is put onto the study of $K^+$ and $K^-$ emission. In the framework of this statistical model it is shown that the experimentally observed equality of $K^+$ and $K^-$ rates at threshold corrected energies $\sqrt{s} - \sqrt{s_{th}}$ is due to a crossing of two excitation functions. Furthermore, the independence of the $K^+$ to $K^-$ ratio on the number of participating nucleons observed between 1 and 10 $A\cdot$GeV is consistent with this model. The observed flow effects are beyond the scope of this model.Comment: 10 pages, 9 figures, Strangeness 2000, V International Conference on Strangeness in Quark Matter, July, 2000, Berkeley, Californi

Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications

Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the HL-LHC. For experiments at hadron colliders, radiation hardness is a key requirement which is not fulfilled by standard CMOS sensor designs that collect charge by diffusion. This issue has been addressed by depleted active pixel sensors in which electronics are embedded into a large deep implantation ensuring uniform charge collection by drift. Very first small prototypes of hybrid depleted active pixel sensors have already shown a radiation hardness compatible with the ATLAS requirements. Nevertheless, to compete with the present hybrid solutions a further reduction in costs achievable by a fully monolithic design is desirable. The H35DEMO is a large electrode full reticle demonstrator chip produced in AMS 350 nm HV-CMOS technology by the collaboration of Karlsruher Institut f\"ur Technologie (KIT), Institut de F\'isica d'Altes Energies (IFAE), University of Liverpool and University of Geneva. It includes two large monolithic pixel matrices which can be operated standalone. One of these two matrices has been characterised at beam test before and after irradiation with protons and neutrons. Results demonstrated the feasibility of producing radiation hard large area fully monolithic pixel sensors in HV-CMOS technology. H35DEMO chips with a substrate resistivity of 200$\Omega$ cm irradiated with neutrons showed a radiation hardness up to a fluence of $10^{15}$n$_{eq}$cm$^{-2}$ with a hit efficiency of about 99% and a noise occupancy lower than $10^{-6}$ hits in a LHC bunch crossing of 25ns at 150V

3D sensors for the HL-LHC

In order to increase its discovery potential, the Large Hadron Collider (LHC) accelerator will be upgraded in the next decade. The high luminosity LHC (HL-LHC) period demands new sensor technologies to cope with increasing radiation fluences and particle rates. The ATLAS experiment will replace the entire inner tracking detector with a completely new silicon-only system. 3D pixel sensors are promising candidates for the innermost layers of the Pixel detector due to their excellent radiation hardness at low operation voltages and low power dissipation at moderate temperatures. Recent developments of 3D sensors for the HL-LHC are presented.Comment: 8 pages, 5 figures, International Workshops on Radiation Imaging Detectors 201

K+ and K- production in heavy-ion collisions at SIS-energies

The production and the propagation of K+ and of K- mesons in heavy-ion collisions at beam energies of 1 to 2 AGeV have systematically been investigated with the Kaon Spectrometer KaoS at the SIS at the GSI. The ratio of the K+ production excitation function for Au+Au and for C+C reactions increases with decreasing beam energy, which is expected for a soft nuclear equation-of-state. At 1.5 AGeV a comprehensive study of the K+ and of the K- emission as a function of the size of the collision system, of the collision centrality, of the kaon energy, and of the polar emission angle has been performed. The K-/K+ ratio is found to be nearly constant as a function of the collision centrality. The spectral slopes and the polar emission patterns are different for K- and for K+. These observations indicate that K+ mesons decouple earlier from the reaction zone than K- mesons.Comment: invited talk given at the SQM2003 conference in Atlantic Beach, USA (March 2003), to be published in Journal of Physics G, 10pages, 7 figure

Decrumpling membranes by quantum effects

The phase diagram of an incompressible fluid membrane subject to quantum and thermal fluctuations is calculated exactly in a large number of dimensions of configuration space. At zero temperature, a crumpling transition is found at a critical bending rigidity $1/\alpha_{\rm c}$. For membranes of fixed lateral size, a crumpling transition occurs at nonzero temperatures in an auxiliary mean field approximation. As the lateral size L of the membrane becomes large, the flat regime shrinks with $1/\ln L$.Comment: 9 pages, 4 figure

Cooling and the SU(2) Instanton Vaccuum

We present results of an investigation into the nature of instantons in 4-dimensional pure gauge lattice $SU(2)$\ obtained from configurations which have been cooled using an under-relaxed cooling algorithm. We discuss ways of calibrating the cooling and the effects of different degrees of cooling, and compare our data for the shapes, sizes and locations of instantons with continuum results. In this paper we extend the ideas and techniques developed by us for use in $O(3)$, and compare the results with those obtained by other groups.Comment: 22 pages, LaTeX, uuencoded compressed tarfile of figures sent separately. Full (compressed) postscript version (118k)available from ftp://rock.helsinki.fi/pub/preprints/tft/Year1995/HU-TFT-95-21/paper.ps.

Difference Equations and Highest Weight Modules of U_q[sl(n)]

The quantized version of a discrete Knizhnik-Zamolodchikov system is solved by an extension of the generalized Bethe Ansatz. The solutions are constructed to be of highest weight which means they fully reflect the internal quantum group symmetry.Comment: 9 pages, LaTeX, no figure