Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi2Te4A

Modification of the gap at the Dirac point (DP) in axion antiferromagnetic topological insulator MnBi2Te4 and its electronic and spin structure have been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation at various temperatures (9-35 K), light polarizations and photon energies. We have distinguished both large (60-70 meV) and reduced (< 20 meV) gaps at the DP in the ARPES dispersions, which remain open above the Neel temperature (T-N = 24.5 K). We propose that the gap above T-N remains open due to a short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for the "large gap" sample and apparently significantly reduced effective magnetic moment for the "reduced gap" sample. These observations can be explained by a shift of the Dirac cone (DC) state localization towards the second Mn layer due to structural disturbance and surface relaxation effects, where DC state is influenced by compensated opposite magnetic moments. As we have shown by means of ab-initio calculations surface structural modification can result in a significant modulation of the DP gap.The authors acknowledge support by the Saint Petersburg State University (Grant No. 51126254), Russian Science Foundation (Grant No. 18-12-00062 in part of the photoemission measurements and Grant No. 18-12-00169 in part of the electronic band structure calculations) and by Russian Foundation of Basic Researches (Grants Nos. 18-52-06009 and 20-32-70179) and Science Development Foundation under the President of the Republic of Azerbaijan (Grant No. EI F-BGM-4-RFTF1/2017-21/04/1-M-02). A. Kimura was financially supported by KAKENHI (Grants No. 17H06138, No. 17H06152, and No. 18H03683). S.V.E. and E.V.C. acknowledge support by the Fundamental Research Program of the State Academies of Sciences (line of research III.23.2.9). The authors kindly acknowledge the HiSOR staff and A. Harasawa at ISSP for technical support and help with the experiment. The ARPES measurements at HiSOR were performed with the approval of the Proposal Assessing Committee (Proposal Numbers: 18BG027 and 19AG048). XAS and XMCD measurements were performed at BL23SU of SPring-8 (Proposal Nos. 2018A3842 and 2018B3842) under the Shared Use Program of JAEA Facilities (Proposal Nos. 2018A-E25 and 2018B-E24) with the approval of Nanotechnology Platform project supported by MEXT, Japan (Proposal Nos. A-18-AE-0020 and A-18-AE-0042). M. M. Otrokov acknowledges the support by Spanish Ministerio de Ciencia e Innovacion (Grant no. PID2019-103910GB-I00). K. Yaji was financially supported by KAKENHI (Grants No. 18K03484)

Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi2_2Te4_4

Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the N\'eel temperature ($T_\mathrm{N}=24.5$~K). We propose that the gap above $T_\mathrm{N}$ remains open due to short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for large-gap sample and significantly reduced effective magnetic moment for the reduced-gap sample. These effects can be associated with a shift of the topological DC state towards the second Mn layer due to structural defects and mechanical disturbance, where it is influenced by a compensated effect of opposite magnetic moments

Impact of Co atoms on the electronic structure of Bi2Te3 and MnBi2Te4 topological insulators

This work is devoted to an experimental investigation of the electronic structure of the surface of topological insulators of various stoichiometry during the adsorption of Co atoms. Changes in the surface electronic structure of Bi2Te3 and MnBi2Te4 systems upon deposition of Co atoms at various temperatures have been studied using the methods of angle-resolved photoemission spectroscopy, as well as X-ray photoelectron spectroscopy. It is suggested that binding of the adsorbed Co atoms to the substrate surface modifies Dirac point position. The observed changes are associated with the possible formation of magnetic Co-containing ordered surface alloys.This work was supported by the St. Petersburg State University, grant no. 73028629, the Russian Science Foundation, grant no. 18-12-00062, the Russian Foundation for Basic Research, grant nos. 20-32-70127, 21-52-12024, and 18-29-12094, the Science Development Foundation of the President of Azerbaijan, grant no. EIF-BGM-4-RFTF-1/2017-21/04/1-M-02, and in the framework of the state assignment of Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, and the Rzhanov Institute of Semiconductors Physics, Siberian Branch of the Russian Academy of Sciences.Peer reviewe

Sample-dependent Dirac-point gap in MnBi2Te4 and its response to applied surface charge: A combined photoemission and ab initio study

Recently discovered intrinsic antiferromagnetic topological insulator MnBi2Te4 presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimental measurements reported on large DP gaps, a number of recent studies claimed to observe a gapless dispersion of the MnBi2Te4 Dirac cone. Here, using micro(μ)-laser angle-resolved photoemission spectroscopy, we study the electronic structure of 15 different MnBi2Te4 samples, grown by two different chemists groups. Based on the careful energy distribution curves analysis, the DP gaps between 15 and 65 meV are observed, as measured below the Néel temperature at about 10–16 K. At that, roughly half of the studied samples show the DP gap of about 30 meV, while for a quarter of the samples the gaps are in the 50 to 60 meV range. Summarizing the results of both our and other groups, in the currently available MnBi2Te4 samples the DP gap can acquire an arbitrary value between a few and several tens of meV. Furthermore, based on the density functional theory, we discuss a possible factor that might contribute to the reduction of the DP gap size, which is the excess surface charge that can appear due to various defects in surface region. We demonstrate that the DP gap is influenced by the applied surface charge and even can be closed, which can be taken advantage of to tune the MnBi2Te4 DP gap size.The authors acknowledge support by the Saint Petersburg State University Grant No. ID 73028629, Russian Science Foundation Grant No. 18-12-00062 in part of the photoemission measurements and total analysis of the results, Grant No. 18-12-00169-p in part of the electronic band structure calculations and Grant No. 20-42-08002 in part of analysis of magnetic properties and Science Development Foundation under the President of the Republic of Azerbaijan Grant No. EI F-BGM-4-RFTF1/2017-21/04/1-M-02. M.M.O. acknowledges the support by Spanish Ministerio de Ciencia e Innovación (Grant No. PID2019-103910GB-I00). K.K. and O.E.T. acknowledge the support from state assignment of IGM SB RAS and ISP SB RAS.Peer reviewe