2,412 research outputs found

    Search for Ferromagnetism in doped semiconductors in the absence of transition metal ions

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    In contrast to semiconductors doped with transition metal magnetic elements, which become ferromagnetic at temperatures below ~ 100K, semiconductors doped with non-magnetic ions (e.g. silicon doped with phosphorous) have not shown evidence of ferromagnetism down to millikelvin temperatures. This is despite the fact that for low densities the system is expected to be well modeled by the Hubbard model, which is predicted to have a ferromagnetic ground state at T=0 on 2- or 3-dimensional bipartite lattices in the limit of strong correlation near half-filling. We examine the impurity band formed by hydrogenic centers in semiconductors at low densities, and show that it is described by a generalized Hubbard model which has, in addition to strong electron-electron interaction and disorder, an intrinsic electron-hole asymmetry. With the help of mean field methods as well as exact diagonalization of clusters around half filling, we can establish the existence of a ferromagnetic ground state, at least on the nanoscale, which is more robust than that found in the standard Hubbard model. This ferromagnetism is most clearly seen in a regime inaccessible to bulk systems, but attainable in quantum dots and 2D heterostructures. We present extensive numerical results for small systems that demonstrate the occurrence of high-spin ground states in both periodic and positionally disordered 2D systems. We consider how properties of real doped semiconductors, such as positional disorder and electron-hole asymmetry, affect the ground state spin of small 2D systems. We also discuss the relationship between this work and diluted magnetic semiconductors, such as Ga_(1-x)Mn_(x)As, which though disordered, show ferromagnetism at relatively high temperatures.Comment: 47 page

    Introduction to dynamical horizons in numerical relativity

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    This paper presents a quasi-local method of studying the physics of dynamical black holes in numerical simulations. This is done within the dynamical horizon framework, which extends the earlier work on isolated horizons to time-dependent situations. In particular: (i) We locate various kinds of marginal surfaces and study their time evolution. An important ingredient is the calculation of the signature of the horizon, which can be either spacelike, timelike, or null. (ii) We generalize the calculation of the black hole mass and angular momentum, which were previously defined for axisymmetric isolated horizons to dynamical situations. (iii) We calculate the source multipole moments of the black hole which can be used to verify that the black hole settles down to a Kerr solution. (iv) We also study the fluxes of energy crossing the horizon, which describes how a black hole grows as it accretes matter and/or radiation. We describe our numerical implementation of these concepts and apply them to three specific test cases, namely, the axisymmetric head-on collision of two black holes, the axisymmetric collapse of a neutron star, and a non-axisymmetric black hole collision with non-zero initial orbital angular momentum.Comment: 20 pages, 16 figures, revtex4. Several smaller changes, some didactic content shortene

    Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

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    We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns

    Temporal expression pattern of genes during the period of sex differentiation in human embryonic gonads

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    Abstract The precise timing and sequence of changes in expression of key genes and proteins during human sex-differentiation and onset of steroidogenesis was evaluated by whole-genome expression in 67 first trimester human embryonic and fetal ovaries and testis and confirmed by qPCR and immunohistochemistry (IHC). SRY/SOX9 expression initiated in testis around day 40 pc, followed by initiation of AMH and steroidogenic genes required for androgen production at day 53 pc. In ovaries, gene expression of RSPO1, LIN28, FOXL2, WNT2B, and ETV5, were significantly higher than in testis, whereas GLI1 was significantly higher in testis than ovaries. Gene expression was confirmed by IHC for GAGE, SOX9, AMH, CYP17A1, LIN28, WNT2B, ETV5 and GLI1. Gene expression was not associated with the maternal smoking habits. Collectively, a precise temporal determination of changes in expression of key genes involved in human sex-differentiation is defined, with identification of new genes of potential importance

    Effect of Genetic Variants, Especially CYP2C9 and VKORC1, on the Pharmacology of Warfarin

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    The genes encoding the cytochrome P450 2C9 enzyme (CYP2C9) and vitamin K-epoxide reductase complex unit 1 (VKORC1) are major determinants of anticoagulant response to warfarin. Together with patient demographics and clinical information, they account for approximately one-half of the warfarin dose variance in individuals of European descent. Recent prospective and randomized controlled trial data support pharmacogenetic guidance with their use in warfarin dose initiation and titration. Benefits from pharmacogenetics-guided warfarin dosing have been reported to extend beyond the period of initial dosing, with supportive data indicating benefits to at least 3 months. The genetic effects of VKORC1 and CYP2C9 in African and Asian populations are concordant with those in individuals of European ancestry; however, frequency distribution of allelic variants can vary considerably between major populations. Future randomized controlled trials in multiethnic settings using population-specific dosing algorithms will allow us to further ascertain the generalizability and cost-effectiveness of pharmacogenetics-guided warfarin therapy. Additional genome-wide association studies may help us to improve and refine dosing algorithms and potentially identify novel biological pathways

    Anonymized Video Analysis Methods and Systems

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    Methods and systems for anonymized video analysis are described. In one embodiment, a first silhouette image of a person in a living unit may be accessed. The first silhouette image may be based on a first video signal recorded by a first video camera. A second silhouette image of the person in the living unit may be accessed. The second silhouette image may be of a different view of the person than the first silhouette image. The second silhouette image may be based on a second video signal recorded by a second video camera. A three-dimensional model of the person in voxel space may be generated based on the first silhouette image, the second silhouette image, and viewing conditions of the first video camera and the second video camera. In some embodiments, information on falls, gait parameters, and other movements of the person living unit are determined. Additional methods and systems are disclosed

    Development of pseudorandom binary arrays for calibration of surface profile metrology tools

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    Optical Metrology tools, especially for short wavelength (EUV and X-Ray), must cover a wide range of spatial frequencies from the very low, which affects figure, to the important mid-spatial frequencies and the high spatial frequency range, which produces undesirable scattering. A major difficulty in using surface profilometers arises due to the unknown Point-Spread Function (PSF) of the instruments [1] that is responsible for distortion of the measured surface profile. Generally, the distortion due to the PSF is difficult to account because the PSF is a complex function that comes to the measurement via the convolution operation, while the measured profile is described with a real function. Accounting for instrumental PSF becomes significantly simpler if the result of measurement of a profile is presented in a spatial frequency domain as a Power Spectral Density (PSD) distribution [2]. For example, the measured PSD distributions provide a closed set of data necessary for three-dimensional calculations of scattering of light by the optical surfaces [3], [4]. The distortion of the surface PSD distribution due to the PSF can be modeled with the Modulation Transfer Function (MTF), which is defined over the spatial frequency bandwidth of the instrument [1], [2]. The measured PSD distribution can be presented as a product of the squared MTF and the ideal PSD distribution inherent for the System Under Test (SUT). Therefore, the instrumental MTF can be evaluated by comparing a measured PSD distribution of a known test surface with the corresponding ideal numerically simulated PSD. The square root of the ratio of the measured and simulated PSD distributions gives the MTF of the instrument. In previous work [5], [6] the instrumental MTF of a surface profiler was precisely measured using reference test surfaces based on Binary Pseudo-Random (BPR) gratings. Here, we present results of fabricating and using two-dimensional (2D) BPR arrays that allow for a direct 2D calibration of the instrumental MTF. BPR sequences are widely used in engineering and communication applications such as Global Position System, and wireless communication protocols. The ideal BPR pattern has a flat 'white noise' response over the entire range of spatial frequencies of interest. The BPR array used here is based on the Uniformly Redundant Array prescription [7] initially used for x-ray and gamma ray astronomy applications. The URA's superior imaging capability originates from the fact that its cyclical autocorrelation function very closely approximates a delta function, which produces a flat PSD. Three different size BPR array patterns were fabricated by electron beam lithography and ICP etching of silicon. The basic size unit was 200 nm, 400 nm, and 600 nm. Two different etch processes were used, CF{sub 4}/Ar and HBr, which resulted in undercut and vertical sidewall profiles, respectively. The 2D BPR arrays were used as standard test surfaces for MTF calibration of the MicroMap{trademark}-570 interferometric microscope using all available objectives. The HBr etched two-dimensional BPR arrays have proven to be a very effective calibration standard making possible direct calibration corrections without the need of additional calculation considerations, while departures from the ideal vertical sidewall require an additional correction term for the CF{sub 4}/Ar etched samples. [8] Initial surface roughness of low cost 'prime' wafers limits low magnification calibration but should not be a limitation if better polished samples are used
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