Quantum Hall Ferromagnetism in a Two-Dimensional Electron System

Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction $\nu = 1/3$) and spin-unpolarized ($\nu = 2/5$) states is accompanied by a complicated series of hysteresis loops reminiscent of a classical ferromagnet. In correlation with the hysteresis, magnetoresistance can either grow or decay logarithmically in time with remarkable persistence and does not saturate. In contrast to the established models of relaxation, the relaxation rate exhibits an anomalous divergence as temperature is reduced. These results indicate the presence of novel two-dimensional ferromagnetism with a complicated magnetic domain dynamic.Comment: 15 pages, 5 figure

Entanglement witnesses arising from Choi type positive linear maps

We construct optimal PPTES witnesses to detect $3\otimes 3$ PPT entangled edge states of type $(6,8)$ constructed recently \cite{kye_osaka}. To do this, we consider positive linear maps which are variants of the Choi type map involving complex numbers, and examine several notions related to optimality for those entanglement witnesses. Through the discussion, we suggest a method to check the optimality of entanglement witnesses without the spanning property.Comment: 18 pages, 4 figures, 1 tabl

Oxide two-dimensional electron gas with high mobility at room-temperature

The prospect of 2‐dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide‐bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high‐electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO(3)‐based heterostructures. Here, 2DEG formation at the LaScO(3)/BaSnO(3) (LSO/BSO) interface with a room‐temperature mobility of 60 cm(2) V(−1) s(−1) at a carrier concentration of 1.7 × 10(13) cm(–2) is reported. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO(3)‐based 2DEGs. This is achieved by combining a thick BSO buffer layer with an ex situ high‐temperature treatment, which not only reduces the dislocation density but also produces a SnO(2)‐terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak beam dark‐field transmission electron microscopy imaging and in‐line electron holography technique, a reduction of the threading dislocation density is revealed, and direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface is provided. This work opens a new pathway to explore the exciting physics of stannate‐based 2DEGs at application‐relevant temperatures for oxide nanoelectronics

Electron-hole asymmetry in Co- and Mn-doped SrFe2As2

Phase diagram of electron and hole-doped SrFe2As2 single crystals is investigated using Co and Mn substitution at the Fe-sites. We found that the spin-density-wave state is suppressed by both dopants, but the superconducting phase appears only for Co (electron)-doping, not for Mn (hole)-doping. Absence of the superconductivity by Mn-doping is in sharp contrast to the hole-doped system with K-substitution at the Sr sites. Distinct structural change, in particular the increase of the Fe-As distance by Mn-doping is important to have a magnetic and semiconducting ground state as confirmed by first principles calculations. The absence of electron-hole symmetry in the Fe-site-doped SrFe2As2 suggests that the occurrence of high-Tc superconductivity is sensitive to the structural modification rather than the charge doping.Comment: 7 pages, 6 figure

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly, an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system is characterized with a rectangular polarization hysteresis loop, with which we confirmed that the diode polarity switching occurred at the ferroelectric coercive voltage. Moreover, we observed a simultaneous switching of the diode polarity and the associated photovoltaic response dependent on the ferroelectric domain configurations. Our detailed study suggests that the polarization charge can affect the Schottky barrier at the ferroelectric/metal interfaces, resulting in a modulation of the interfacial carrier injection. The amount of polarization-modulated carrier injection can affect the transition voltage value at which a space-charge-limited bulk current-voltage (J-V) behavior is changed from Ohmic (i.e., J ~ V) to nonlinear (i.e., J ~ V^n with n \geq 2). This combination of bulk conduction and polarization-modulated carrier injection explains the detailed physical mechanism underlying the switchable diode effect in ferroelectric capacitors.Comment: Accepted for publication in Phys. Rev.

Design considerations for a background limited 350 micron pixel array using lumped element superconducting microresonators

Future submillimeter telescopes will demand arrays with ~ 10^6 pixels to fill the focal plane. MAKO is a 350 µm camera being developed to demonstrate the use of superconducting microresonators to meet the high multiplexing factors required for scaling to large-format arrays while offering background-limited single-pixel sensitivity. Candidate pixel designs must simultaneously meet many requirements. To achieve the desired noise equivalent powers it must efficiently absorb radiation, feature a high responsivity, and exhibit low intrinsic device noise. Additionally, the use of high resonator quality factors of order ~ 10^5 and resonant frequencies of order f_(res) ≈ 100 MHz are desirable in order to reduce the per-pixel bandwidth to a minimum set by telescope scan speeds. This allows a maximum number of pixels to be multiplexed in a fixed electronic bandwidth. Here we present measurement results of the first MAKO prototype array which meets these design requirements while demonstrating sufficient sensitivity for background-limited operation at ground-based, far-infrared telescopes

Anisotropic Dirac fermions in a Bi square net of SrMnBi2

We report the highly anisotropic Dirac fermions in a Bi square net of SrMnBi2, based on a first principle calculation, angle resolved photoemission spectroscopy, and quantum oscillations for high-quality single crystals. We found that the Dirac dispersion is generally induced in the (SrBi)+ layer containing a double-sized Bi square net. In contrast to the commonly observed isotropic Dirac cone, the Dirac cone in SrMnBi2 is highly anisotropic with a large momentum-dependent disparity of Fermi velocities of ~ 8. These findings demonstrate that a Bi square net, a common building block of various layered pnictides, provide a new platform that hosts highly anisotropic Dirac fermions.Comment: 5 pages, 4 figure

Phase Dependent Thermopower in Andreev Interferometers

We report measurements of the thermopower S of mesoscopic Andreev interferometers, which are hybrid loops with one arm fabricated from a superconductor (Al), and one arm from a normal metal (Au). S depends on the phase of electrons in the interferometer, oscillating as a function of magnetic flux with a period of one flux quantum (= h/2e). The magnitude of S increases as the temperature T is lowered, reaching a maximum around T = 0.14 K, and decreases at lower temperatures. The symmetry of S oscillations with respect to magnetic flux depends on the topology of the sample.Comment: 4 pages, 4 figure

Scaling of the anomalous Hall effect in Sr1−x_{1-x}Cax_xRuO3_3

The anomalous Hall effect (AHE) of ferromagnetic thin films of Sr$_{1-x}$Ca$_{x}$RuO$_3$ (0 $\leq x \leq$ 0.4) is studied as a function of $x$ and temperature $T$. As $x$ increases, both the transition temperature $T_c$ and the magnetization $M$ are reduced and vanish near $x \sim$ 0.7. For all compositions, the transverse resistivity $\rho_{H}$ varies non-monotonously with $T$, and even changes sign, thus violating the conventional expression $\rho_{H}=R_o B + 4\pi R_s M(T)$ ($B$ is the magnetic induction, while $R_o$ and $R_s$ are the ordinary and anomalous Hall coefficients). From the rather complicated data of $\rho_H$, we find a scaling behavior of the transverse conductivity $\sigma_{xy}$ with $M(T)$, which is well reproduced by the first-principles band calculation assuming the intrinsic origin of the AHE.Comment: REVTeX 4 style; 5 pages, 3 figures; revised 23/2 and accepted for publicatio