8 research outputs found

    Growth velocity and the topography of Ni-Zn binary alloy electrodeposits

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    We show that the electrodeposition of Ni-Zn alloys at the lowest growth velocities, v<0.5μv < 0.5 \mum/s, exclusively proceeds from an abnormal co-deposition phenomenon. The growth process in this v region greatly depends on the initial [ Co2+] concentration of the film deposition bath. A theoretical approach of this process including the role of the saturation surface roughness of the alloy, σsat\sigma_{\rm sat}, leads to an estimation of the transport properties of the ad-atoms involved during the deposit formation. Their surface diffusion coefficient varying between 1.76×10−101.76\times 10^{-10} and 2.40×10−82.40\times 10^{-8} cm-2/s exhibits a minimal value, Ds=2.10×10−10D_{\rm s} = 2.10\times 10^{-10} cm-2/s located between v = 0.17 and 0.35μ0.35 \mum/s. The spatial scaling analysis of the local roughness, σ, examined according to the power-law σ≈Lα\sigma\approx L^{\alpha} reveals that the resulting roughness exponents concurs with the Kardar-Parisi-Zhang dynamics including the restricted surface diffusion. Two main v regions leads to different fractal textural features of the alloy film surface. Below 0.10 μm/s, the roughness exponent obtained is α≈0.6\alpha\approx 0.6, depicting a limited ad-atom mobility. Over v=0.30μv = 0.30 \mum/s, this exponent stabilises at α≈0.82\alpha\approx 0.82, indicating an increase of the surface diffusion

    Nonlinear Optical Study of Nano-Sized Effects in a-Si: H Thin Films Deposited by RF-Glow Discharge

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    We have evidenced the high sensitivity of infrared-induced second harmonic generation (IR-ISHG) to the structural changes occurred in amorphous hydrogenated silicon films (a-Si: H) prepared by RF-glow discharge technique at different substrate temperatures and doping types. In every case, a maximal signal of the IR-induced SHG is achieved at temperature of about 110 K and pump-probe delaying time about 22–39 ps. It indicates a marked effect of doped subsystems in the observed nonlinear optical effects. A substantial effect of doping is established from a drastic change of the IR-induced SHG behavior presenting an anomaly at about 400 MW/cm2 for a pumping power with wavelength 1.54 μm. A minimum of the SHG is observed in that case for standard nondoped films. Note here that the doping type does not affect the behavior of the second-order nonlinear optical susceptibility. The thermo annealing leads to a slight decrease of the effective second-order susceptibilities. Larger changes are observed with doped samples for the pump-probe delaying time from about 39 till 24 ps
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