Spin torque driven dynamics of a coupled two layer structure: interplay between conservative and dissipative coupling

In this manuscript the general concepts of spin wave theory are adapted to the dynamics of a self-polarized system based on two layers coupled via interlayer exchange (conservative coupling) and mutual spin torque (dissipative coupling). An analytical description of the non-linear dynamics is proposed and validated through numerical simulations. In contrast to the single layer model, the phase equation of the coupled system has a contribution coming from the dissipative part of the LLGS equation. It is shown that this is a major contribution to the frequency mandatory to describe well the most basic features of the dynamics of coupled systems. Using the proposed model a specific feature of coupled dynamics is addressed: the redshift to blueshift transition observed in the frequency current dependence of this kind of exchange coupled systems upon increasing the applied field. It is found that the blueshift regime can only occur in a region of field where the two linear eigenmodes contribute equally to the steady state mode (i.e. high mode hybridization). Finally, a general perturbed Hamiltonian equation for the coupled system is proposed.Comment: 16 pages, 7 figue

Dependence of nonlocal Gilbert damping on the ferromagnetic layer type in FM/Cu/Pt heterostructures

We have measured the size effect in nonlocal Gilbert relaxation rate in FM(t$_{FM}$) / Cu (5nm) [/ Pt (2nm)] / Al(2nm) heterostructures, FM = \{ Ni$_{81}$Fe$_{19}$, Co$_{60}$Fe$_{20}$B$_{20}$, pure Co\}. Common behavior is observed for three FM layers, where the additional relaxation obeys both a strict inverse power law dependence $\Delta G =K \:t^{n}$, $n=-\textrm{1.04}\pm\textrm{0.06}$ and a similar magnitude $K=\textrm{224}\pm\textrm{40 Mhz}\cdot\textrm{nm}$. As the tested FM layers span an order of magnitude in spin diffusion length $\lambda_{SDL}$, the results are in support of spin diffusion, rather than nonlocal resistivity, as the origin of the effect

Spin pumping damping and magnetic proximity effect in Pd and Pt spin-sink layers

We investigated the spin pumping damping contributed by paramagnetic layers (Pd, Pt) in both direct and indirect contact with ferromagnetic Ni$_{81}$Fe$_{19}$ films. We find a nearly linear dependence of the interface-related Gilbert damping enhancement $\Delta\alpha$ on the heavy-metal spin-sink layer thicknesses t$_\textrm{N}$ in direct-contact Ni$_{81}$Fe$_{19}$/(Pd, Pt) junctions, whereas an exponential dependence is observed when Ni$_{81}$Fe$_{19}$ and (Pd, Pt) are separated by \unit[3]{nm} Cu. We attribute the quasi-linear thickness dependence to the presence of induced moments in Pt, Pd near the interface with Ni$_{81}$Fe$_{19}$, quantified using X-ray magnetic circular dichroism (XMCD) measurements. Our results show that the scattering of pure spin current is configuration-dependent in these systems and cannot be described by a single characteristic length

Microwave spectroscopy on magnetization reversal dynamics of nanomagnets with electronic detection

We demonstrate a detection method for microwave spectroscopy on magnetization reversal dynamics of nanomagnets. Measurement of the nanomagnet anisotropic magnetoresistance was used for probing how magnetization reversal is resonantly enhanced by microwave magnetic fields. We used Co strips of 2 um x 130 nm x 40 nm, and microwave fields were applied via an on-chip coplanar wave guide. The method was applied for demonstrating single domain-wall resonance, and studying the role of resonant domain-wall dynamics in magnetization reversal

Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio

We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the relative amplitude of the two spin-torque contributions. This was confirmed by micromagnetic simulations. Real-time measurements of the reversal were performed with samples of low and high aspect ratio. For low aspect ratios, a precessional motion of the magnetization was observed and the effect of temperature on the precession coherence was studied. For high aspect ratios, we observed magnetization reversals in less than 1 ns for high enough current densities, the final state being controlled by the current direction in the magnetic tunnel junction cell.Comment: 6 pages, 7 figure

Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis

We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current induced magnetization switching between the antiparallel and parallel alignments at DC current densities as low as 4*106A/cm2. We attribute the low value of the critical current to the influence of localized reductions in the tunnel barrier, which affects the current distribution. The analysis of random telegraph noise, which appears in the field interval near a magnetization switch, provides an estimate to the dimension of the pseudo pinholes that trigger the magnetization switching via local spin torque. Micromagnetic simulations qualitatively and quantitatively reproduce the main experimental observations

Angular dependence of domain wall resistivity in SrRuO3_{{\bf 3}} films

${\rm SrRuO_3}$ is a 4d itinerant ferromagnet (T$_{c}$ $\sim$150 K) with stripe domain structure. Using high-quality thin films of SrRuO$_{3}$ we study the resistivity induced by its very narrow ($\sim 3$ nm) Bloch domain walls, $\rho_{DW}$ (DWR), at temperatures between 2 K and T$_{c}$ as a function of the angle, $\theta$, between the electric current and the ferromagnetic domains walls. We find that $\rho_{DW}(T,\theta)=\sin^2\theta \rho_{DW}(T,90)+B(\theta)\rho_{DW}(T,0)$ which provides the first experimental indication that the angular dependence of spin accumulation contribution to DWR is $\sin^2\theta$. We expect magnetic multilayers to exhibit a similar behavior.Comment: 5 pages, 5 figure