695 research outputs found

    Hydrodynamic Equations in Quantum Hall Systems at Large Currents

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    Hydrodynamic equations (HDEQs) are derived which describe spatio-temporal evolutions of the electron temperature and the chemical potential of two-dimensional systems in strong magnetic fields in states with large diagonal resistivity appearing at the breakdown of the quantum Hall effect. The derivation is based on microscopic electronic processes consisting of drift motions in a slowly-fluctuating potential and scattering processes due to electron-electron and electron-phonon interactions. In contrast with the usual HDEQs, one of the derived HDEQs has a term with an energy flux perpendicular to the electric field due to the drift motions in the magnetic field. As an illustration, the current distribution is calculated using the derived HDEQs.Comment: 10 pages, 2 Postscript figures, to be published in J. Phys. Soc. Jpn. 71 (2002) No.

    Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

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    We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under applied bias and magnetic field. The abrupt changes in the photoluminescence, with the applied bias, provide information of the charge accumulation effects on the device.Comment: 4 pages, 2 figure

    Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors

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    We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InAs layers. Electrons move ballistically for short times while moving diffusively for sufficiently long times. We find that electrons show anomalous diffusion in the intermediate time domain. Our study suggests that electrons in inhomogeneous InAs could be used to experimentally explore generalized random walk phenomena, which, some studies assert, also occur naturally in the motion of animal foraging paths

    Theory of Current-Induced Breakdown of the Quantum Hall Effect

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    By studying the quantum Hall effect of stationary states with high values of injected current using a von Neumann lattice representation, we found that broadening of extended state bands due to a Hall electric field occurs and causes the breakdown of the quantum Hall effect. The Hall conductance agrees with a topological invariant that is quantized exactly below a critical field and is not quantized above a critical field. The critical field is proportional to B3/2B^{3/2} and is enhanced substantially if the extended states occupy a small fraction of the system.Comment: 5 pages, RevTeX, final version to appear in PR

    Bifurcations and chaos in semiconductor superlattices with a tilted magnetic field

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    We study the effects of dissipation on electron transport in a semiconductor superlattice with an applied bias voltage and a magnetic field that is tilted relative to the superlattice axis.In previous work, we showed that although the applied fields are stationary,they act like a THz plane wave, which strongly couples the Bloch and cyclotron motion of electrons within the lowest miniband. As a consequence,the electrons exhibit a unique type of Hamiltonian chaos, which creates an intricate mesh of conduction channels (a stochastic web) in phase space, leading to a large resonant increase in the current flow at critical values of the applied voltage. This phase-space patterning provides a sensitive mechanism for controlling electrical resistance. In this paper, we investigate the effects of dissipation on the electron dynamics by modifying the semiclassical equations of motion to include a linear damping term. We demonstrate that even in the presence of dissipation,deterministic chaos plays an important role in the electron transport process. We identify mechanisms for the onset of chaos and explore the associated sequence of bifurcations in the electron trajectories. When the Bloch and cyclotron frequencies are commensurate, complex multistability phenomena occur in the system. In particular, for fixed values of the control parameters several distinct stable regimes can coexist, each corresponding to different initial conditions. We show that this multistability has clear, experimentally-observable, signatures in the electron transport characteristics.Comment: 14 pages 11 figure

    Solving variational inequalities defined on a domain with infinitely many linear constraints

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    We study a variational inequality problem whose domain is defined by infinitely many linear inequalities. A discretization method and an analytic center based inexact cutting plane method are proposed. Under proper assumptions, the convergence results for both methods are given. We also provide numerical examples to illustrate the proposed method

    Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects

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    We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry.Comment: 5 pages, 3 figure

    Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors

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    We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene–boron nitride heterostructures and are close to peaks in the single phonon density of states
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