28 research outputs found

    Role of micropipes in the formation of pores at foreign polytype boundaries in SiC crystals

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    The role of micropipes in pore formation in SiC crystals with foreign polytype inclusions is studied by means of synchrotron phase sensitive radiography, optical and scanning electron microscopies, and color photoluminescence. The pores at the inclusion boundaries are revealed, and their shapes and locations are analyzed. It is found that the pores arise due to the attraction of micropipes by the foreign polytype interfaces, followed by micropipe coalescence. The observed pores have tubular or slit shapes. Tubular pores nucleate at the inclusion corners, where the inclusion-associated stresses are concentrated. Slit pores spread between them and follow the shape of the inclusion boundaries. We explain the observations within a two-dimensional model of elastic interaction between micropipes and inclusion boundaries, which accounts for free surfaces of micropipes.open119sciescopu

    Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals

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    Using synchrotron X-ray topography and phase-contrast imaging, we investigated lattice defects in bulk SiC crystals grown by physical vapor transport in a free spreading condition. We find that polytype inclusions appearing at initial growth stage are overgrown by the matrix, making pores which are then transformed into micropipes with a low density of 10 cm(-2), in particular, in the lateral region. We propose that complex planar defects configured from dislocations and micropipes are transformed into slit pores via vacancy-diffusion and micropipes-attraction mechanisms. Our finding suggests that suppression of the nucleation of foreign polytype inclusions is a key approach for providing high quality free spreading SiC growth.open110sciescopu

    Structural transformation of dislocated micropipes in silicon carbide

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    The interaction of super screw-dislocations, or micropipes, in PVT grown SiC crystals has been studied by Synchrotron Radiation radiography. The reduction in micropipe density via reactions of coalescence, annihilation and transformation of micropipes has been observed. The reactions have been described quantitatively based on the micromechanics of these defects.X115sciescopu

    SR phase contrast imaging to address the evolution of defects during SiC growth

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    Sliced SiC boule grown by physical vapor transport is investigated using synchrotron white beam phase contrast imaging combined with Bragg diffraction. The evolution of defects is revealed. In the early growth stage, foreign polytype inclusions not only induce massive generation of full-core dislocations and dislocated micropipes but also attract them, forming slit-type pores at the boundaries of inclusions. In the intermediate stage, when inclusions stop to grow and become overgrown by the matrix, the pore density significantly reduces, which is attributed to their transformation into new micropipes. In the later stage, the micropipe density decreases, providing evidence for their partial annihilation and healing. Mechanisms for the evolution from inclusions to pores and finally to micropipes during the crystal growth are further discussed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimX1165sciescopu

    Micropipe absorption mechanism of pore growth at foreign polytype boundaries in SiC crystals

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    Formation of pores at foreign polytype boundaries in bulk SiC crystals is studied by means of synchrotron radiation phase-sensitive radiography, optical and scanning electron microscopies, and color photoluminescence. It is demonstrated that pores are formed through coalescence of micropipes and extend along the polytype boundaries by means of micropipe absorption. A theoretical model is suggested, which describes the micropipe absorption by an elliptic pore nucleated at the boundary of a foreign polytype inclusion. It is shown that depending on the inclusion distortion, the pore can either be a separate micropipe, or grow up to a certain length, or occupy the whole facet of the inclusion.open1144sciescopu

    Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC

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    The silicon vacancy in its neutral charge state (V-Si) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor shell surrounding the vacancy. The complete hyperfine tensors have been determined for the V-Si(0) center residing at all inequivalent lattice sites in the two polytypes. These are compared with the parameters previously obtained for the negatively charged silicon vacancy

    Synchrotron radiographic study and computer simulation of reactions between micropipes in silicon carbide

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    By using synchrotron radiation phase sensitive radiography we have examined the reactions of screw superdislocations or micropipes in silicon carbide single crystals: bundling, twisting, and splitting. To understand the nature of these reactions, a model of micropipe motion during crystal growth has been proposed. Based on this model, a computer simulation of the evolution of a random micropipe ensemble has been performed. The simulation demonstrates that the coalescence of micropipes with opposite-sign Burgers vectors may be realized in two ways: (i) their straightforward movement towards each other or (ii) their revolution about one another. Twisted dislocation dipoles arise when two micropipes are under strong influence of the stress fields from dense groups of other micropipes. The transformation of dipoles into semiloops as well as the annihilation of micropipes result in diminishing of their average density. (C) 2003 American Institute of Physics.open111717sciescopu

    Micropipe evolution in silicon carbide

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    Micropipe bundling and twisting in SiC crystals was revealed using synchrotron x-ray phase sensitive radiography. The computer simulation of micropipe evolution during the crystal growth suggests that the bundled and twisted micropipes arise under the influence of stress fields from other neighboring micropipes. The annihilation of twisted dipoles is attributed to their transformation into semiloops. Reactions of micropipe coalescence lead to the generation of micropipes and/or the annihilation of initial micropipes, resulting in the decrease in their average density. (C) 2003 American Institute of Physics.open111515sciescopu
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