Optical Study of GaAs quantum dots embedded into AlGaAs nanowires

We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported. The influence of the diameter sizes distribution is evidenced in the optical spectroscopy data together with the presence of various crystalline phases in the AlGaAs nanowires.Comment: 5 page, 5 figure

High pressure torsion induced structural transformations in Ti- and Zr-based amorphous alloys

The melt-spun (MS) Ti50Ni25Cu25 alloy and the Zr62Cu22A110Fe5Dy1 bulk metallic glass (BMG) were subjected to high pressure torsion (HPT). X-ray diffraction (XRD) measurements show a shift of the first diffraction halo to a low angle after HPT processing, which corresponds to an increase in the values of the radius of the first coordination sphere and the free volume. Direct density measurements confirmed an increase in free volume values. A special TEM procedure was used for a detailed study of the microstructure of both amorphous alloys after HPT processing. The study revealed the formation of a large density of shear bands (SBs) in both alloys. Nanocrystals are formed directly in shear bands as a result of strain-inducted nanocrystallization. Amorphous nanoclusters with a size of 20 nm are formed in an amorphous matrix surrounding the SBs in the HPT-processed MS alloy Ti50Ni25Cu25. The formation of nanoclusters was not observed in BMG Zr62Cu22A110Fe5Dy1 after HPT processing

Heterogeneous nucleation of catalyst-free InAs nanowires on silicon

We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si(111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites can be controlled by the sputtering parameters, allowing the control of nanowire density in a wide range. Nanowire nucleation is accompanied by unwanted parasitic islands, but careful choice of annealing and growth temperature allows us to strongly reduce the relative density of these islands and to realize samples with high nanowire yield

Increase of the longitudinal exciton magnetic momentum due to its movement

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Low-Temperature In-Induced Holes Formation in Native-SiOx/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiOx layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surface density drastically depend on the substrate growth temperature, where 800 °C corresponds to the maximum elongation rate of the NWs. In the second part of the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section and possess high crystal quality. We propose a theoretical model of the novel nanostructure formation which includes the role of the dopant Si. Some of the Si-doped samples were studied with the photoluminescence (PL) technique. The analysis of the PL spectra shows that the highest value of donor concentration in the nanostructures exceeds 5∙1019 cm−3

Enhancement of the longitudinal magnetic moment of the exciton due to its motion

International audienceA new physical phenomenon has been found, namely a giant enhancement of the exciton magnetic moment due to its motion. This phenomenon was observed in GaAs , CdTe and ZnSe based quantum wells with QW widths much larger than the exciton Bohr radius. Consequently, it is relevant to any crystal with zinc blende structure