Einige Bemerkungen über die Existenz von Ganglienzellen in den Herzventrikeln des Menschen und Einiger Säugetiere

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Soft Photons in Hadron-Hadron Collisions: Synchrotron Radiation from the QCD Vacuum?

We discuss the production of soft photons in high energy hadron-hadron collisions. We present a model where quarks and antiquarks in the hadrons emit ``synchrotron light'' when being deflected by the chromomagnetic fields of the QCD vacuum, which we assume to have a nonperturbative structure. This gives a source of prompt soft photons with frequencies $\omega <= 300 MeV$ in the c.m. system of the collision in addition to hadronic bremsstrahlung. In comparing the frequency spectrum and rate of ``synchrotron'' photons to experimental results we find some supporting evidence for their existence. We make an exclusive--inclusive connection argument to deduce from the ``synchrotron'' effect a behaviour of the neutron electric formfactor $G_E^n(Q^2)$ proportional to $(Q^2)^{1/6}$ for $Q^2 < 20 fm^{-2}$. We find this to be consistent with available data. In our view, soft photon production in high energy hadron-hadron and lepton-hadron collisions as well as the behaviour of electromagnetic hadron formfactors for low $Q^2$ are thus sensitive probes of the nonperturbative structure of the QCD vacuum.Comment: Heidelberg preprint HD-THEP-94-36, 31 pages, LaTeX + ZJCITE.sty (included), 12 figures appended as uuencoded compressed ps-fil

Attenuated and Protease-Profile Modified Sendai Virus Vectors as a New Tool for Virotherapy of Solid Tumors

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Elastic Mid-Infrared Light Scattering: a Basis for Microscopy of Large-Scale Electrically Active Defects in Semiconducting Materials

A method of the mid-IR-laser microscopy has been proposed for the investigation of the large-scale electrically and recombination active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of the investigations on the low-angle mid-IR-light scattering in semiconductors. The essence of the technical idea was to apply the dark-field method for spatial filtering of the scattered light in the scanning mid-IR-laser microscope. This approach enabled the visualization of large-scale electrically active defects which are the regions enriched with ionized electrically active centers. The photoexcitation of excess carriers within a small volume located in the probe mid-IR-laser beam enabled the visualization of the large-scale recombination-active defects like those revealed in the optical or electron beam induced current methods. Both these methods of the scanning mid-IR-laser microscopy are now introduced in detail in the present paper as well as a summary of techniques used in the standard method of the lowangle mid-IR-light scattering itself. Besides the techniques for direct observations, methods for analyses of the defect composition associated with the mid-IR-laser microscopy are also discussed in the paper.Comment: 44 pages, 13 figures. A good oldi