Perturbation expansions for a class of singular potentials

Harrell's modified perturbation theory [Ann. Phys. 105, 379-406 (1977)] is applied and extended to obtain non-power perturbation expansions for a class of singular Hamiltonians H = -D^2 + x^2 + A/x^2 + lambda/x^alpha, (A\geq 0, alpha > 2), known as generalized spiked harmonic oscillators. The perturbation expansions developed here are valid for small values of the coupling lambda > 0, and they extend the results which Harrell obtained for the spiked harmonic oscillator A = 0. Formulas for the the excited-states are also developed.Comment: 23 page

Variational analysis for a generalized spiked harmonic oscillator

A variational analysis is presented for the generalized spiked harmonic oscillator Hamiltonian operator H, where H = -(d/dx)^2 + Bx^2+ A/x^2 + lambda/x^alpha, and alpha and lambda are real positive parameters. The formalism makes use of a basis provided by exact solutions of Schroedinger's equation for the Gol'dman and Krivchenkov Hamiltonian (alpha = 2), and the corresponding matrix elements that were previously found. For all the discrete eigenvalues the method provides bounds which improve as the dimension of the basis set is increased. Extension to the N-dimensional case in arbitrary angular-momentum subspaces is also presented. By minimizing over the free parameter A, we are able to reduce substantially the number of basis functions needed for a given accuracy.Comment: 15 pages, 1 figur

Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point

Diode-pumped Ho:Tm:YLF laser pumping and AgGaSe2 parametric oscillator

Tuning of both the pump laser, a Ho:Tm:YLF laser operating on the 5 I 7 - 5 I 8 transition, and an AgGaSe2 parametric oscillator has been demonstrated. Tuning of the Ho:Tm:YLF laser is complicated but not frustrated by the existence of both CO2 and H2O lines in the vicinity of the laser transition. Tuning of the parametric oscillator was achieved by tuning of the pump laser. Injection seeding of the parametric oscillator on the nonresonant signal was also demonstrated. In addition, the measured efficiencies of the parametric oscillator were compared by two different methods, measuring the parametric-oscillator output energy and measuring the energy depleted from the pump. By comparison of these measurements, the intrinsic efficiency of the parametric oscillator cab be determine

Part of the D - dimensional Spiked harmonic oscillator spectra

The pseudoperturbative shifted - l expansion technique PSLET [5,20] is generalized for states with arbitrary number of nodal zeros. Interdimensional degeneracies, emerging from the isomorphism between angular momentum and dimensionality of the central force Schrodinger equation, are used to construct part of the D - dimensional spiked harmonic oscillator bound - states. PSLET results are found to compare excellenly with those from direct numerical integration and generalized variational methods [1,2].Comment: Latex file, 20 pages, to appear in J. Phys. A: Math. & Ge

Asymptotic iteration method for eigenvalue problems

An asymptotic interation method for solving second-order homogeneous linear differential equations of the form y'' = lambda(x) y' + s(x) y is introduced, where lambda(x) \neq 0 and s(x) are C-infinity functions. Applications to Schroedinger type problems, including some with highly singular potentials, are presented.Comment: 14 page

First Multicharged Ion Irradiation Results from the CUEBIT Facility at Clemson University

A new electron beam ion trap (EBIT) based ion source and beamline were recently commissioned at Clemson University to produce decelerated beams of multi- to highly-charged ions for surface and materials physics research. This user facility is the first installation of a DREEBIT-designedsuperconducting trap and ion source (EBIS-SC) in the U.S. and includes custom-designed target preparation and irradiation setups. An overview of the source, beamline, and other facilities as well as results from first measurements on irradiated targets are discussed here. Results include extracted charge state distributions and first data on a series of irradiated metal-oxide-semiconductor (MOS) device targets. For the MOS devices, we show that voltage-dependent capacitance can serve as a record of theelectronic component of ion stopping power for an irradiated, encapsulated oxide target

170 Nanometer Nuclear Magnetic Resonance Imaging using Magnetic Resonance Force Microscopy

We demonstrate one-dimensional nuclear magnetic resonance imaging of the semiconductor GaAs with 170 nanometer slice separation and resolve two regions of reduced nuclear spin polarization density separated by only 500 nanometers. This is achieved by force detection of the magnetic resonance, Magnetic Resonance Force Microscopy (MRFM), in combination with optical pumping to increase the nuclear spin polarization. Optical pumping of the GaAs creates spin polarization up to 12 times larger than the thermal nuclear spin polarization at 5 K and 4 T. The experiment is sensitive to sample volumes containing $\sim 4 \times 10^{11}$ $^{71}$Ga$/\sqrt{Hz}$. These results demonstrate the ability of force-detected magnetic resonance to apply magnetic resonance imaging to semiconductor devices and other nanostructures.Comment: Submitted to J of Magnetic Resonanc