2,034 research outputs found
Perturbation expansions for a class of singular potentials
Harrell's modified perturbation theory [Ann. Phys. 105, 379-406 (1977)] is
applied and extended to obtain non-power perturbation expansions for a class of
singular Hamiltonians H = -D^2 + x^2 + A/x^2 + lambda/x^alpha, (A\geq 0, alpha
> 2), known as generalized spiked harmonic oscillators. The perturbation
expansions developed here are valid for small values of the coupling lambda >
0, and they extend the results which Harrell obtained for the spiked harmonic
oscillator A = 0. Formulas for the the excited-states are also developed.Comment: 23 page
Variational analysis for a generalized spiked harmonic oscillator
A variational analysis is presented for the generalized spiked harmonic
oscillator Hamiltonian operator H, where H = -(d/dx)^2 + Bx^2+ A/x^2 +
lambda/x^alpha, and alpha and lambda are real positive parameters. The
formalism makes use of a basis provided by exact solutions of Schroedinger's
equation for the Gol'dman and Krivchenkov Hamiltonian (alpha = 2), and the
corresponding matrix elements that were previously found. For all the discrete
eigenvalues the method provides bounds which improve as the dimension of the
basis set is increased. Extension to the N-dimensional case in arbitrary
angular-momentum subspaces is also presented. By minimizing over the free
parameter A, we are able to reduce substantially the number of basis functions
needed for a given accuracy.Comment: 15 pages, 1 figur
Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices
An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point
Diode-pumped Ho:Tm:YLF laser pumping and AgGaSe2 parametric oscillator
Tuning of both the pump laser, a Ho:Tm:YLF laser operating on the 5 I 7 - 5 I 8 transition, and an AgGaSe2 parametric oscillator has been demonstrated. Tuning of the Ho:Tm:YLF laser is complicated but not frustrated by the existence of both CO2 and H2O lines in the vicinity of the laser transition. Tuning of the parametric oscillator was achieved by tuning of the pump laser. Injection seeding of the parametric oscillator on the nonresonant signal was also demonstrated. In addition, the measured efficiencies of the parametric oscillator were compared by two different methods, measuring the parametric-oscillator output energy and measuring the energy depleted from the pump. By comparison of these measurements, the intrinsic efficiency of the parametric oscillator cab be determine
Part of the D - dimensional Spiked harmonic oscillator spectra
The pseudoperturbative shifted - l expansion technique PSLET [5,20] is
generalized for states with arbitrary number of nodal zeros. Interdimensional
degeneracies, emerging from the isomorphism between angular momentum and
dimensionality of the central force Schrodinger equation, are used to construct
part of the D - dimensional spiked harmonic oscillator bound - states. PSLET
results are found to compare excellenly with those from direct numerical
integration and generalized variational methods [1,2].Comment: Latex file, 20 pages, to appear in J. Phys. A: Math. & Ge
Asymptotic iteration method for eigenvalue problems
An asymptotic interation method for solving second-order homogeneous linear
differential equations of the form y'' = lambda(x) y' + s(x) y is introduced,
where lambda(x) \neq 0 and s(x) are C-infinity functions. Applications to
Schroedinger type problems, including some with highly singular potentials, are
presented.Comment: 14 page
First Multicharged Ion Irradiation Results from the CUEBIT Facility at Clemson University
A new electron beam ion trap (EBIT) based ion source and beamline were recently commissioned at Clemson University to produce decelerated beams of multi- to highly-charged ions for surface and materials physics research. This user facility is the first installation of a DREEBIT-designedsuperconducting trap and ion source (EBIS-SC) in the U.S. and includes custom-designed target preparation and irradiation setups. An overview of the source, beamline, and other facilities as well as results from first measurements on irradiated targets are discussed here. Results include extracted charge state distributions and first data on a series of irradiated metal-oxide-semiconductor (MOS) device targets. For the MOS devices, we show that voltage-dependent capacitance can serve as a record of theelectronic component of ion stopping power for an irradiated, encapsulated oxide target
170 Nanometer Nuclear Magnetic Resonance Imaging using Magnetic Resonance Force Microscopy
We demonstrate one-dimensional nuclear magnetic resonance imaging of the
semiconductor GaAs with 170 nanometer slice separation and resolve two regions
of reduced nuclear spin polarization density separated by only 500 nanometers.
This is achieved by force detection of the magnetic resonance, Magnetic
Resonance Force Microscopy (MRFM), in combination with optical pumping to
increase the nuclear spin polarization. Optical pumping of the GaAs creates
spin polarization up to 12 times larger than the thermal nuclear spin
polarization at 5 K and 4 T. The experiment is sensitive to sample volumes
containing Ga. These results
demonstrate the ability of force-detected magnetic resonance to apply magnetic
resonance imaging to semiconductor devices and other nanostructures.Comment: Submitted to J of Magnetic Resonanc
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