Performance and materials aspects of Ge:Be photoconductors

Ge:Be photoconductors were developed for low photon background applications in the 30 to 50 MM wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Beryllium doped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of approx. one million torr. An optimum detective quantum efficiency of 46% at a background flux of 1.5 x 10 to the 8th power photons/second (7 x 10 to the 13th power W) was reported. Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors

Quantum Gauge Equivalence in QED

We discuss gauge transformations in QED coupled to a charged spinor field, and examine whether we can gauge-transform the entire formulation of the theory from one gauge to another, so that not only the gauge and spinor fields, but also the forms of the operator-valued Hamiltonians are transformed. The discussion includes the covariant gauge, in which the gauge condition and Gauss's law are not primary constraints on operator-valued quantities; it also includes the Coulomb gauge, and the spatial axial gauge, in which the constraints are imposed on operator-valued fields by applying the Dirac-Bergmann procedure. We show how to transform the covariant, Coulomb and spatial axial gauges to what we call ``common form,'' in which all particle excitation modes have identical properties. We also show that, once that common form has been reached, QED in different gauges has a common time-evolution operator that defines time-translation for states that represent systems of electrons and photons. By combining gauge transformations with changes of representation from standard to common form, the entire apparatus of a gauge theory can be transformed from one gauge to another.Comment: Contribution for a special issue of Foundations of Physics honoring Fritz Rohrlich; edited by Larry P. Horwitz, Tel-Aviv University, and Alwyn van der Merwe, University of Denver (Plenum Publishing, New York); 40 pages, REVTEX, Preprint UCONN-93-3, 1 figure available upon request from author

Regrowth-related defect formation and evolution in 1 MeV amorphized (001) Ge

Geimplanted with 1MeV Si⁺ at a dose of 1×10¹⁵cm⁻² creates a buried amorphous layer that, upon regrowth, exhibits several forms of defects–end-of-range (EOR), regrowth-related, and clamshell defects. Unlike Si, no planar {311} defects are observed. The minimal EOR defects are small dotlike defects and are very unstable, dissolving between 450 and 550°C. This is in contrast to Si, where the EOR defects are very stable. The amorphous layer results in both regrowth-related defects and clamshell defects, which were more stable than the EOR damage.This work is supported by Semiconductor Research Corporation Contract No. 00057787

Non-adherence to eye care in people with diabetes

Objective Evaluate individual factors that impact adherence to eye care follow-up in patients with diabetes. Design and methods A 4-year retrospective chart review was conducted for 1968 patients with diabetes over age 40 from an urban academic center. Data collected included demographics, insurance, visual acuity, smoking status, medications, dates of dilated fundus examinations (DFE), and reported hemoglobin A1C and blood glucose levels. The primary outcome was timely DFE follow-up adherence following the initial eye exam visit. Results Overall, 41.6% of patients adhered to initial follow-up eye care recommendations. Multivariable analysis demonstrated that patients with severe diabetic retinopathy (DR) were more adherent than patients with mild DR (OR 1.86). Other variables associated with increased adherence were visual impairment and reported A1C or blood glucose. Smoking was associated with decreased adherence. Ethnicity and insurance were also significantly associated with adherence. Longitudinal follow-up rates were influenced by additional factors, including ethnicity and neighborhood deprivation index. Conclusions Patients with moderate to severe DR and/ or visual impairment were more likely to adhere to timely DFE follow-up. This could relate to the presence of visual symptoms and/or other systemic manifestations of diabetes. Smokers were less likely to adhere to timely DFE follow-up. One hypothesis is patients who smoke have other symptomatic health problems which patients prioritize over asymptomatic ocular disorders. In order to reduce vision loss from DR, practitioners should be aware that patients with mild and moderate DR, patients with normal vision, and smokers are at greater risk for poor follow-up eye care adherence. © Article author(s) (or their employer(s) unless otherwise stated in the text of the article) 2017. All rights reserved

MIPS: The Multiband Imaging Photometer for SIRTF

The Multiband Imaging Photometer for SIRTF (MIPS) is to be designed to reach as closely as possible the fundamental sensitivity and angular resolution limits for SIRTF over the 3 to 700μm spectral region. It will use high performance photoconductive detectors from 3 to 200μm with integrating JFET amplifiers. From 200 to 700μm, the MIPS will use a bolometer cooled by an adiabatic demagnetization refrigerator. Over much of its operating range, the MIPS will make possible observations at and beyond the conventional Rayleigh diffraction limit of angular resolution

Formation of diluted III–V nitride thin films by N ion implantation

iluted III–Nₓ–V₁ˍₓ alloys were successfully synthesized by nitrogen implantation into GaAs,InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nₓ–V₁ˍₓ alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grownGaNₓAs1−x and InNₓP₁ˍₓalloys. In GaNₓAs₁ˍₓ the highest value of x (fraction of “active” substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNₓP₁ˍₓ was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implantedInNₓP₁ˍₓ was at least a factor of 2 higher than that in GaNₓAs₁ˍₓ under similar processing conditions. AlyGa1−yNₓAs₁ˍₓ had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNₓAs₁ˍₓalloys. Notably, the band gap of these alloys remains direct, even above the value of y (y>0.44) where the band gap of the host material is indirect.This work was supported by the ‘‘Photovoltaic Materials Focus Area’’ in the DOE Center of Excellence for the Synthesis and Processing of Advanced Materials, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences under U.S. Department of Energy Contract No. DE-ACO3-76SF00098. The work at UCSD was partially supported by Midwest Research Institute under subcontractor No. AAD-9-18668-7 from NREL

High fidelity quantum memory via dynamical decoupling: theory and experiment

Quantum information processing requires overcoming decoherence---the loss of "quantumness" due to the inevitable interaction between the quantum system and its environment. One approach towards a solution is quantum dynamical decoupling---a method employing strong and frequent pulses applied to the qubits. Here we report on the first experimental test of the concatenated dynamical decoupling (CDD) scheme, which invokes recursively constructed pulse sequences. Using nuclear magnetic resonance, we demonstrate a near order of magnitude improvement in the decay time of stored quantum states. In conjunction with recent results on high fidelity quantum gates using CDD, our results suggest that quantum dynamical decoupling should be used as a first layer of defense against decoherence in quantum information processing implementations, and can be a stand-alone solution in the right parameter regime.Comment: 6 pages, 3 figures. Published version. This paper was initially entitled "Quantum gates via concatenated dynamical decoupling: theory and experiment", by Jacob R. West, Daniel A. Lidar, Bryan H. Fong, Mark F. Gyure, Xinhua Peng, and Dieter Suter. That original version split into two papers: http://arxiv.org/abs/1012.3433 (theory only) and the current pape