1,161 research outputs found

    A Note on the Toda Criterion for Interacting Dipole-Quadrupole Vibrations

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    The Toda criterion of the Gaussian curvature is applied to calculate analytically the transition energy from regular to chaotic motion in a schematic model describing the interaction between collective dipole and quadrupole modes in atomic nuclei.Comment: Latex, 9 pages, 2 figures (available upon request), to be published in Modern Physics Letters

    Free Field Dynamics in the Generalized AdS (Super)Space

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    Pure gauge representation for general vacuum background fields (Cartan forms) in the generalized AdSAdS superspace identified with OSp(L,M)OSp(L,M) is found. This allows us to formulate dynamics of free massless fields in the generalized AdSAdS space-time and to find their (generalized) conformal and higher spin field transformation laws. Generic solution of the field equations is also constructed explicitly. The results are obtained with the aid of the star product realization of ortosymplectic superalgebras.Comment: Some notes added, corrected typo

    Symbolic dynamics for the NN-centre problem at negative energies

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    We consider the planar NN-centre problem, with homogeneous potentials of degree -\a<0, \a \in [1,2). We prove the existence of infinitely many collisions-free periodic solutions with negative and small energy, for any distribution of the centres inside a compact set. The proof is based upon topological, variational and geometric arguments. The existence result allows to characterize the associated dynamical system with a symbolic dynamics, where the symbols are the partitions of the NN centres in two non-empty sets

    The Non-Trapping Degree of Scattering

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    We consider classical potential scattering. If no orbit is trapped at energy E, the Hamiltonian dynamics defines an integer-valued topological degree. This can be calculated explicitly and be used for symbolic dynamics of multi-obstacle scattering. If the potential is bounded, then in the non-trapping case the boundary of Hill's Region is empty or homeomorphic to a sphere. We consider classical potential scattering. If at energy E no orbit is trapped, the Hamiltonian dynamics defines an integer-valued topological degree deg(E) < 2. This is calculated explicitly for all potentials, and exactly the integers < 2 are shown to occur for suitable potentials. The non-trapping condition is restrictive in the sense that for a bounded potential it is shown to imply that the boundary of Hill's Region in configuration space is either empty or homeomorphic to a sphere. However, in many situations one can decompose a potential into a sum of non-trapping potentials with non-trivial degree and embed symbolic dynamics of multi-obstacle scattering. This comprises a large number of earlier results, obtained by different authors on multi-obstacle scattering.Comment: 25 pages, 1 figure Revised and enlarged version, containing more detailed proofs and remark

    Photoresponse of PbS nanoparticles-quaterthiophene films prepared by gaseous deposition as probed by XPS

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    Cataloged from PDF version of article.Semiconducting lead sulfide (PbS) nanoparticles were cluster beam deposited into evaporated quaterthiophene (4T) organic films, which in some cases were additionally modified by simultaneous 50 eV acetylene ion bombardment. Surface chemistry of these nanocomposite films was first examined using standard x-ray photoelectron spectroscopy (XPS). XPS was also used to probe photoinduced shifts in peak binding energies upon illumination with a continuous wave green laser and the magnitudes of these peak shifts were interpreted as changes in relative photoconductivity. The four types of films examined all displayed photoconductivity: 4T only, 4T with acetylene ions, 4T with PbS nanoparticles, and 4T with both PbS nanoparticles and acetylene ions. Furthermore, the ion-modified films displayed higher photoconductivity, which was consistent with enhanced bonding within the 4T organic matrix and between 4T and PbS nanoparticles. PbS nanoparticles displayed higher photoconductivity than the 4T component, regardless of ion modification. (C) 2012 American Vacuum Society

    Theoretical backgrounds of durability analysis by normalized equivalent stress functionals

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    Generalized durability diagrams and their properties are considered for a material under a multiaxial loading given by an arbitrary function of time. Material strength and durability under such loading are described in terms of durability, safety factor and normalized equivalent stress. Relations between these functionals are analysed. We discuss some material properties including time and load stability, self-degradation (ageing), and monotonic damaging. Phenomenological strength conditions are presented in terms of the normalized equivalent stress. It is shown that the damage based durability analysis is reduced to a particular case of such strength conditions. Examples of the reduction are presented for some known durability models. The approach is applicable to the strength and durability description at creep and impact loading and their combination

    Canonical Melnikov theory for diffeomorphisms

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    We study perturbations of diffeomorphisms that have a saddle connection between a pair of normally hyperbolic invariant manifolds. We develop a first-order deformation calculus for invariant manifolds and show that a generalized Melnikov function or Melnikov displacement can be written in a canonical way. This function is defined to be a section of the normal bundle of the saddle connection. We show how our definition reproduces the classical methods of Poincar\'{e} and Melnikov and specializes to methods previously used for exact symplectic and volume-preserving maps. We use the method to detect the transverse intersection of stable and unstable manifolds and relate this intersection to the set of zeros of the Melnikov displacement.Comment: laTeX, 31 pages, 3 figure

    How close can one approach the Dirac point in graphene experimentally?

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    The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogeneity is as low as \approx10^8 cm^-2, allowing a neutral state with a few charge carriers per entire micron-scale device. Above liquid helium temperatures, the electronic properties of such devices are intrinsic, being governed by thermal excitations only. This yields that the Dirac point can be approached within 1 meV, a limit currently set by the remaining charge inhomogeneity. No sign of an insulating state is observed down to 1 K, which establishes the upper limit on a possible bandgap

    High Performance Processors for Space Environments: A Subproject of the NASA Exploration Missions Systems Directorate "Radiation Hardened Electronics for Space Environments" Technology Development Program

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    Implementation of challenging Exploration Systems Missions Directorate objectives and strategies can be constrained by onboard computing capabilities and power efficiencies. The Radiation Hardened Electronics for Space Environments (RHESE) High Performance Processors for Space Environments project will address this challenge by significantly advancing the sustained throughput and processing efficiency of high-per$ormance radiation-hardened processors, targeting delivery of products by the end of FY12

    Heat to Electricity Conversion by a Graphene Stripe with Heavy Chiral Fermions

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    A conversion of thermal energy into electricity is considered in the electrically polarized graphene stripes with zigzag edges where the heavy chiral fermion (HCF) states are formed. The stripes are characterized by a high electric conductance Ge and by a significant Seebeck coefficient S. The electric current in the stripes is induced due to a non-equilibrium thermal injection of "hot" electrons. This thermoelectric generation process might be utilized for building of thermoelectric generators with an exceptionally high figure of merit Z{\delta}T \simeq 100 >> 1 and with an appreciable electric power densities \sim 1 MW/cm2.Comment: 8 pages, 3 figure
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