Análisis y ejecución de estrategias en la industria de sensores mediante la simulación CAPSIM

Documento en el que se muestra el trabajo realizado en la dirección de una empresa de la industria de sensores dentro del simulador de negocios Capsim. Se presenta un análisis de la industria de los sensores, se describe la empresa en la que se trabajó, las estrategias de negocio y el proceso de su implementación, así como los resultados finales

Characterization of power transistors as high dose dosimeters

A bipolar transistor, previously investigated as a possible radiation dosimeter and tested under industrial irradiation conditions in high-activity gamma and high-energy, high-power electron beam facilities has been subjected to stability test in order to understand its behaviour and help to improve its performances. Charge carrier lifetime was measured for several sets of transistors which were then irradiated with various doses (3-60 kGy): seven sets with Co-60 gamma rays and eight with a 10MeV electron beam. After irradiation all the transistors were measured and each set was divided into three groups: one group was left untreated, the second group was heated at 100 degrees C for 30 minutes and the third group was heated at 150 degrees C for 30 minutes, for testing the stability of the lifetime. Our data showed that heat treatment quite successfully eliminates post-irradiation changes in the response. Response measurements of the irradiated transistors, heat-treated and untreated, were carried out at room temperature over several weeks after irradiation to establish post-irradiation stability and assess if these transistors could be used for recording dose history. Calibration curves in the range 3-60 kGy for the thermally treated and untreated devices are presented. Dependence of the response of the transistors on the temperature of the measurements in the range 20-50 degrees C is reported

Plan de negocios para la distribución de paneles solares con la utilización de energías renovables

Trabajo en el que se presenta un plan de negocios para la venta e instalación de paneles solares en el occidente de México. Para el plan, se realizó un análisis de la industria, del mercado, la descripción del negocio, la estrategia de marketing, el plan de operaciones, de administración, el plan financiero, de implementación y de contingencia

Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes

Nitroaromatic explosives are the most common explosives, and their detection is important to public security, human health, and environmental protection. In particular, the detection of solid explosives through directly revealing the presence of their vapors in air would be desirable for compact and portable devices. In this study, amino-functionalized carbon nanotubes were used to produce resistive sensors to detect nitroaromatic explosives by interaction with their vapors. Devices formed by carbon nanotube networks working at room temperature revealed trinitrotoluene, one of the most common nitroaromatic explosives, and di-nitrotoluene-saturated vapors, with reaction and recovery times of a few and tens of seconds, respectively. This type of resistive device is particularly simple and may be easily combined with low-power electronics for preparing portable devices

Energy Levels Associated with Extended Defects in Plastically Deformed n-Type Silicon

Deep Level Transient Spectroscopy (DLTS) investigations of plastically deformed, n-type silicon have been performed. DLTS spectra revealed four lines usually found in deformed silicon but they were unusually dominated by a broadened level located at 0.40 eV from the conduction band edge. This trap resulted to be the most localized at the dislocations, while the other traps are probably related to point defects. The measured DLTS line widths have been simulated by the introduction of a broadening parameter $\delta$, whose dependence on the dislocation density has been studied. Some hypotheses on the physical mechanisms responsible for the line broadening have been advanced. A tentative identification of the defects responsible for the deep levels observed has been performed

Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon

The thermal behaviour of deformation-induced traps in plastically deformed n-type silicon has been investigated via Deep Level Transient Spectroscopy. Among the four traps usually detected in plastically deformed silicon only two have been found to survive upon annealing: trap A and trap C located at 0.18–0.23 eV and 0.38–0.43 eV from the conduction band edge, respectively. The last one has been related to dislocations