Study of X-ray Radiation Damage in Silicon Sensors

The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules and the study of ultra-fast processes. Silicon pixel sensors will be used to record the diffraction images. In 3 years of operation the sensors will be exposed to doses of up to 1 GGy of 12 keV X-rays. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the insulating layer covering the silicon and interface traps at the Si-SiO2 interface will be introduced by the irradiation and build up over time. We have investigated the microscopic defects in test structures and the macroscopic electrical properties of segmented detectors as a function of the X-ray dose. From the test structures we determine the oxide charge density and the densities of interface traps as a function of dose. We find that both saturate (and even decrease) for doses between 10 and 100 MGy. For segmented sensors the defects introduced by the X-rays increase the full depletion voltage, the surface leakage current and the inter-pixel capacitance. We observe that an electron accumulation layer forms at the Si-SiO2 interface. Its width increases with dose and decreases with applied bias voltage. Using TCAD simulations with the dose dependent parameters obtained from the test structures, we are able to reproduce the observed results. This allows us to optimize the sensor design for the XFEL requirements

Neutron irradiation effect on SiPMs up to Φneq\Phi_{neq} = 5 ×\times 1014^{14} cm−2^{-2}

Silicon Photo-Multipliers (SiPM) are becoming the photo-detector of choice for increasingly more particle detection applications, from fundamental physics to medical and societal applications. One major consideration for their use at high-luminosity colliders is the radiation damage induced by hadrons, which leads to a dramatic increase of the dark count rate. KETEK SiPMs have been exposed to various fluences of reactor neutrons up to $\Phi_{neq}$ = 5$\times$10$^{14}$ cm$^{-2}$ (1 MeV equivalent neutrons). Results from the I-V, and C-V measurements for temperatures between $-$30$^\circ$C and $+$30$^\circ$C are presented. We propose a new method to quantify the effect of radiation damage on the SiPM performance. Using the measured dark current the single pixel occupation probability as a function of temperature and excess voltage is determined. From the pixel occupation probability the operating conditions for given requirements can be optimized. The method is qualitatively verified using current measurements with the SiPM illuminated by blue LED light

Design, development and evaluation of Stanford/Ames EVA prehensors

Space Station operations and maintenance are expected to make unprecedented demands on astronaut EVA. With Space Station expected to operate with an 8 to 10 psi atmosphere (4 psi for Shuttle operations), the effectivness of pressurized gloves is called into doubt at the same time that EVA activity levels are to be increased. To address the need for more frequent and complex EVA missions and also to extend the dexterity, duration, and safety of EVA astronauts, NASA Ames and Stanford University have an ongoing cooperative agreement to explore and compare alternatives. This is the final Stanford/Ames report on manually powered Prehensors, each of which consists of a shroud forming a pressure enclosure around the astronaut's hand, and a linkage system to transfer the motions and forces of the hand to mechanical digits attached to the shroud. All prehensors are intended for attachment to a standard wrist coupling, as found on the AX-5 hard suit prototype, so that realistic tests can be performed under normal and reduced gravity as simulated by water flotation

Design, development and evaluation of Stanford/Ames Extra-Vehicular Activity (EVA) prehensors

A summary is given of progress to date on work proposed in 1983 and continued in 1985, including design iterations on three different types of manually powered prehensors, construction of functional mockups of each and culminating in detailed drawings and specifications for suit-compatible sealed units for testing under realistic conditions

Perceived Risks Associated with Contraceptive Method Use among Men and Women in Ibadan and Kaduna, Nigeria

Research shows that side effects are often the most common reason for contraceptive non-use in Nigeria; however, research to date has not explored the underlying factors that influence risk and benefit perceptions associated with specific contraceptive methods in Nigeria. A qualitative study design using focus group discussions was used to explore social attitudes and beliefs about family planning methods in Ibadan and Kaduna, Nigeria. A total of 26 focus group discussions were held in 2010 with men and women of reproductive age, disaggregated by city, sex, age, marital status, neighborhood socioeconomic status, and—for women only—family planning experience. A discussion guide was used that included specific questions about the perceived risks and benefits associated with the use of six different family planning methods. A thematic content analytic approach guided the analysis. Participants identified a spectrum of risks encompassing perceived threats to health (both real and fictitious) and social concerns, as well as benefits associated with each method. By exploring Nigerian perspectives on the risks and benefits associated with specific family planning methods, programs aiming to increase contraceptive use in Nigeria can be better equipped to highlight recognized benefits, address specific concerns, and work to dispel misperceptions associated with each family planning method

Self-heating Effect in Silicon-Photomultipliers

The main effect of radiation damage in a Silicon-Photolumtiplier (SiPM) is a dramatic increase in the dark current. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Heating studies were performed with a KETEK SiPM, glued on an Al$_2$O$_3$ substrate, which is either directly connected to the temperature-controlled chuck of a probe station, or through layers of material with well-known thermal resistance. The SiPM is illuminated by a LED operated in DC-mode. The SiPM current is measured and used to determine the steady-state temperature as a function of power dissipated in the multiplication region of the SiPM and thermal resistance, as well as the time dependencies for heating and cooling. This information can be used to correct the parameters determined for radiation-damaged SiPM for the effects of self-heating. The method can also be employed for packaged SiPMs with unknown thermal contact to a heat sink. The results presented in this paper are preliminary