110 research outputs found
Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions
This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells
grown on bulk GaN for intersubband optoelectronics in the short- and
mid-wavelength infrared ranges. The characterization results are compared to
those for reference samples grown on the polar c-plane, and are verified by
self-consistent Schr\"odinger-Poisson calculations. The best results in terms
of mosaicity, surface roughness, photoluminescence linewidth and intensity, as
well as intersubband absorption are obtained from m-plane structures, which
display room-temperature intersubband absorption in the range from 1.5 to 2.9
um. Based on these results, a series of m-plane GaN/AlGaN multi-quantum-wells
were designed to determine the accessible spectral range in the mid-infrared.
These samples exhibit tunable room-temperature intersubband absorption from 4.0
to 5.8 um, the long-wavelength limit being set by the absorption associated
with the second order of the Reststrahlen band in the GaN substrates
Boron-doped superlattices and Bragg mirrors in diamond
International audienceA periodic modulation of the boron doping level of single crystal diamond multilayers over more than three orders of magnitude during epitaxial growth by microwave plasma-enhanced chemical vapor deposition is shown to yield Bragg mirrors in the visible. The thicknesses and doping level of the individual layers were controlled by in situ spectroscopic ellipsometry, enabling to tune the reflec-tance peak to the wavelength range of diamond color centers, such as NV 0 or NV À . The crystalline quality, periodicity, and sharpness of the doping transitions in these doping superlattices over tens of periods were confirmed by high resolution X-ray diffraction
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics
We report the interplay between In incorporation and strain relaxation
kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted
molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural
and morphological quality is obtained under In excess conditions, at In
accumulation limit, and at a growth temperature where InGaN decomposition is
active. Under such conditions, in situ and ex situ analysis of the evolution of
the crystalline structure with the growth thickness points to an onset of
misfit relaxation after the growth of 40 nm, and a gradual relaxation during
more than 200 nm which results in an inhomogeneous strain distribution along
the growth axis. This process is associated with a compositional pulling
effect, i.e. indium incorporation is partially inhibited in presence of
compressive strain, resulting in a compositional gradient with increasing In
mole fraction towards the surface
Ferromagnetic (Ga,Mn)N epilayers versus antiferromagnetic GaMnN clusters
Mn-doped wurtzite GaN epilayers have been grown by nitrogen plasma-assisted
molecular beam epitaxy. Correlated SIMS, structural and magnetic measurements
show that the incorporation of Mn strongly depends on the conditions of the
growth. Hysteresis loops which persist at high temperature do not appear to be
correlated to the presence of Mn. Samples with up to 2% Mn are purely
substitutional GaMnN epilayers, and exhibit paramagnetic
properties. At higher Mn contents, precipitates are formed which are identified
as GaMnN clusters by x-ray diffraction and absorption: this induces a
decrease of the paramagnetic magnetisation. Samples co-doped with enough Mg
exhibit a new feature: a ferromagnetic component is observed up to
K, which cannot be related to superparamagnetism of unresolved magnetic
precipitates.Comment: Revised versio
Structure and magnetism of self-organized Ge(1-x)Mn(x) nano-columns
We report on the structural and magnetic properties of thin Ge(1-x)Mn(x)films
grown by molecular beam epitaxy (MBE) on Ge(001) substrates at temperatures
(Tg) ranging from 80deg C to 200deg C, with average Mn contents between 1 % and
11 %. Their crystalline structure, morphology and composition have been
investigated by transmission electron microscopy (TEM), electron energy loss
spectroscopy and x-ray diffraction. In the whole range of growth temperatures
and Mn concentrations, we observed the formation of manganese rich
nanostructures embedded in a nearly pure germanium matrix. Growth temperature
mostly determines the structural properties of Mn-rich nanostructures. For low
growth temperatures (below 120deg C), we evidenced a two-dimensional spinodal
decomposition resulting in the formation of vertical one-dimensional
nanostructures (nanocolumns). Moreover we show in this paper the influence of
growth parameters (Tg and Mn content) on this decomposition i.e. on nanocolumns
size and density. For temperatures higher than 180deg C, we observed the
formation of Ge3Mn5 clusters. For intermediate growth temperatures nanocolumns
and nanoclusters coexist. Combining high resolution TEM and superconducting
quantum interference device magnetometry, we could evidence at least four
different magnetic phases in Ge(1-x)Mn(x) films: (i) paramagnetic diluted Mn
atoms in the germanium matrix, (ii) superparamagnetic and ferromagnetic low-Tc
nanocolumns (120 K 400 K) and
(iv) Ge3Mn5 clusters.Comment: 10 pages 2 colonnes revTex formatte
Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis
ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B
buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires
or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111]
oriented cubic mixed with [0001] oriented hexagonal regions are obtained on
(111)B substrates. Most of the NWs are perpendicular to the surface in the last
case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as
demonstrated by transmission electron microscopy, energy filtered TEM and high
angle annular dark field scanning TEM measurements
Extraction of the homogeneous linewidth of the spectrally diffusing line of a CdSe/ZnSe quantum dot embedded in a nanowire
International audienceWe present a simple method to extract the homogeneous linewidth of a single photon emitter line exhibiting fast (down to 1 ns) spectral diffusion (SD). It is based on a recently developed technique using photon correlation measurements on half of the line. Here we show that the SD induced bunching depends on the ratio between the width of the homogeneous line and the spectral diffusion amplitude. Using this technique on a CdSe/ZnSe quantum dot, we investigate the temperature dependence of its fast SD amplitude and its homogeneous excitonic linewidt
Exciton-phonon coupling efficiency in CdSe quantum dots embedded in ZnSe nanowires
International audienceExciton luminescence of a CdSe quantum dot (QD) inserted in a ZnSe nanowire is strongly influenced by the dark exciton states. Because of the small size of these QDs (2-5 nm), exchange interaction between hole and electron is highly enhanced and we measured large energy splitting between bright and dark exciton states (ΔE∈[4,9.2] meV) and large spin-flip rates between these states. Statistics on many QDs showed that this splitting depends on the QD size. Moreover, we measured an increase of the spin-flip rate to the dark states with increasing energy splitting. We explain this observation with a model, taking into account the fact that the exciton-phonon interaction depends on the bright to dark exciton energy splitting, as well as on the size and shape of the exciton wave function. It also has consequences on the exciton line intensity at high temperature
Polarity determination in ZnSe nanowires by HAADF STEM
High angle annular dark field scanning transmission electron microscopy is
used to analyze the polarity of ZnSe nanowires grown, by molecular beam
epitaxy, on GaAs substrates. The experimental results are compared to simulated
images in order to verify possible experimental artefacts. In this work we show
that for this type of nano-objects, a residual tilt of the specimen below 15
mrad, away from the crystallographic zone axis does not impair the
interpretation of the experimental images
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