10,798 research outputs found
Exit chipping in ID sawing of silicon crystals
The processes involved in exit chipping which may occur in the internal diameter diamond sawing of silicon crystals were examined. An interpretation of chipping observations is given in terms of crack propagation as acted upon by the sawing stresses. Since the exit chips are roughly parallel to saw marks, the general locus of the crack must be determined by contact stresses although the exact locus depends on already existing subfractures located in the kerf region which are caused by more than one abrasive particle. The crack starts at either edge since these are weak areas in flexure. In the more extensive "saw fracture", the fracture plane often changes part-way across the slice to be other than parallel to the saw mark because the speed of the crack accelerates beyond the speed of the blade travel; i.e., outstrips the advance of the contact stress field. The influences of various external factors on the opening of the crack are divided into two types: factors that wedge the crack apart and those that bend the slice away from the crystal. From a consideration of these factors, conditions for minimizing exit chipping are defined
The nature of the observed free-electron-like state in a PTCDA monolayer on Ag(111)
A free-electron like band has recently been observed in a monolayer of PTCDA
(3,4,9,10-perylene tetracarboxylic dianhydride) molecules on Ag(111) by
two-photon photoemission [Schwalb et al., Phys. Rev. Lett. 101, 146801 (2008)]
and scanning tunneling spectroscopy [Temirov et al., Nature 444, 350 (2006)].
Using density functional theory calculations, we find that the observed
free-electron like band originates from the Shockley surface state band being
dramatically shifted up in energy by the interaction with the adsorbed
molecules while it acquires also a substantial admixture with a molecular band
Solar cell and I.C. aspects of ingot-to-slice mechanical processing
Intensive efforts have been put into the growth of silicon crystals to suit today's solar cell and integrated circuit requirements. Each step of processing the crystal must also receive concentrated attention to preserve the grown-in perfection and to provide a suitable device-ready wafer at reasonable cost. A comparison is made between solar cell and I.C. requirements on the mechanical processing of silicon from ingot to wafer. Specific defects are described that can ruin the slice or can possibly lead to device degradation. These include grinding cracks, saw exit chips, crow's-foot fractures, edge cracks, and handling scratches
Limits to the salience of ultraviolet: Lessons from colour vision in bees and birds
Publisher version: http://jeb.biologists.org/content/204/14/2571/F1.expansio
ALTERNATIVE METHODS OF ACCOUNTING FOR LIVESTOCK CAPITAL FORMATION: AN APPLICATION TO SOUTHERN U.S. AGRICULTURE
Livestock Production/Industries,
Spatial Mixing of Coloring Random Graphs
We study the strong spatial mixing (decay of correlation) property of proper
-colorings of random graph with a fixed . The strong spatial
mixing of coloring and related models have been extensively studied on graphs
with bounded maximum degree. However, for typical classes of graphs with
bounded average degree, such as , an easy counterexample shows that
colorings do not exhibit strong spatial mixing with high probability.
Nevertheless, we show that for with and
sufficiently large , with high probability proper -colorings of
random graph exhibit strong spatial mixing with respect to an
arbitrarily fixed vertex. This is the first strong spatial mixing result for
colorings of graphs with unbounded maximum degree. Our analysis of strong
spatial mixing establishes a block-wise correlation decay instead of the
standard point-wise decay, which may be of interest by itself, especially for
graphs with unbounded degree
Convergence Rate of Riemannian Hamiltonian Monte Carlo and Faster Polytope Volume Computation
We give the first rigorous proof of the convergence of Riemannian Hamiltonian
Monte Carlo, a general (and practical) method for sampling Gibbs distributions.
Our analysis shows that the rate of convergence is bounded in terms of natural
smoothness parameters of an associated Riemannian manifold. We then apply the
method with the manifold defined by the log barrier function to the problems of
(1) uniformly sampling a polytope and (2) computing its volume, the latter by
extending Gaussian cooling to the manifold setting. In both cases, the total
number of steps needed is O^{*}(mn^{\frac{2}{3}}), improving the state of the
art. A key ingredient of our analysis is a proof of an analog of the KLS
conjecture for Gibbs distributions over manifolds
TRANSPARENCY PRIVACY CLASHING PARADIGMS IN A WEB 2.0 WORLD
A University of Utah Honors Think Tank 201
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