A Defined Terminal Region of the E. coli Chromosome Shows Late Segregation and High FtsK Activity

Background: The FtsK DNA-translocase controls the last steps of chromosome segregation in E. coli. It translocates sister chromosomes using the KOPS DNA motifs to orient its activity, and controls the resolution of dimeric forms of sister chromosomes by XerCD-mediated recombination at the dif site and their decatenation by TopoIV. Methodology: We have used XerCD/dif recombination as a genetic trap to probe the interaction of FtsK with loci located in different regions of the chromosome. This assay revealed that the activity of FtsK is restricted to a,400 kb terminal region of the chromosome around the natural position of the dif site. Preferential interaction with this region required the tethering of FtsK to the division septum via its N-terminal domain as well as its translocation activity. However, the KOPSrecognition activity of FtsK was not required. Displacement of replication termination outside the FtsK high activity region had no effect on FtsK activity and deletion of a part of this region was not compensated by its extension to neighbouring regions. By observing the fate of fluorescent-tagged loci of the ter region, we found that segregation of the FtsK high activity region is delayed compared to that of its adjacent regions. Significance: Our results show that a restricted terminal region of the chromosome is specifically dedicated to the last step

DEPOT ELECTROCHIMIQUE DE FILMS MAGNETIQUES DOUX COFECU ET COMPORTEMENT EN ATMOSPHERE OXYDANTE

GRENOBLE1-BU Sciences (384212103) / SudocSudocFranceF

High performance Metal-Insulator-Metal capacitor using a SrTiO3/ZrO2 bilayer

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Inverted cones grating for flexible metafilter at optical and infrared frequencies

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Graph theoretical analysis reveals the adaptive role of the left ventral occipito-temporal cortex in the brain networks during speech processing

Abstract The left ventral occipito-temporal cortex (left-vOT) plays a key role in reading. Several studies have also reported its activation during speech processing, suggesting that it may play a role beyond written word recognition. Here, we adopt a graph theoretical analysis to investigate the functional role of this area in the whole-brain network while participants processed spoken sentences in different tasks. We find that its role and interactions with other areas changes in an adaptive manner. In a low-level speech perception task, the left-vOT is part of the visual network and acts as a connector that supports the communication with other cognitive systems. When speech comprehension is required, the area becomes a connector within the sensorimotor-auditory network typically recruited during speech processing. However, when comprehension is compromised due to degradation of speech input, the area disengages from the sensorimotor-auditory network. It becomes part of the visual network again and turns from connector into a simple peripheral node. These varying connectivity patterns are coherent with the Interactive Account considering the left-vOT as a convergent zone with multiple functions and interaction patterns that depend on task demands and the nature of sensory input

Transfer of AlGaAs/GaAs crystalline Bragg mirror from a GaAs substrate to a fused silica substrate by direct bonding

International audienceDirect bonding has been a major key technology in many fields nowadays. From microelectronic to optoelectronic technologies, it became a technique used for mass production technology in many different applications. Direct bonding of silicon or silicon dioxide is now a well known process. In this article, we explore this technology through the transfer of III-V AlGaAs/GaAs crystalline multilayer from its native GaAs substrate upon a fused silica substrate (SiO2). The goal of this work is to explore the conception of crystalline Bragg mirrors with low mechanical loss and high optical quality for precision measurement applications.We present the main results obtained for each step of the transfer process. Various experiment such as AFM characterization have been performed on the wafers to probe surface quality. Chemical wet etching with different experimental conditions have been tested to remove the GaAs substrate. We discuss the main challenges of the process, especially the bonding of two rather different materials from the thermo-mechanic point of view. Focus is also made on the chemistry used in the wet etching part to have a selective etching between GaAs and AlGaAs