Potential barrier height at the grain boundaries of a poly-silicon nanowire

We present measurements of the potential barrier height and its dependence on grain size in poly-silicon nanowire (P-SiNW) arrays. Measurements conducted using Kelvin probe force microscopy coupled with electrostatic simulations, enabled us also to extract the density of the grain boundary interface states and their energy distribution. In addition it was shown that the barrier height scales with the grain size as the square of the grain radius

Lattice-Match Stabilization and Magnetic Properties of Metastable Epitaxial Permalloy-Disilicide Nanostructures on a Vicinal Si(111) Substrate

We report the epitaxial formation of metastable γ-(FexNi1−x)Si2 nanostructure arrays resulting from the reaction of Ni80Fe20 permalloy with vicinal Si(111) surface atoms. We then explore the effect of structure and composition on the nanostructure’s magnetic properties. The low-temperature annealing (T < 600 °C) of a pre-deposited permalloy film led to solid-phase epitaxial nucleation of compact disk-shaped island nanostructures decorating <110> ledges of the stepped surface, with either (2 × 2) or (3×3) R30° reconstructed flat top faces. High resolution scanning transmission electron microscopy analysis demonstrated fully coherent epitaxy of the islands with respect to the substrate, consistent with a well-matched CaF2-prototype structure associated with γ-FeSi2, along perfect atomically sharp interfaces. Energy dispersive spectroscopy detected ternary composition of the islands, with Fe and Ni atoms confined to the islands, and no trace of segregation. Our magnetometry measurements revealed the superparamagnetic behavior of the silicide islands, with a blocking temperature around 30 K, reflecting the size, shape, and dilute arrangement of the islands in the assembly

Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire

Wafer-scale fabrication of semiconductor nanowire devices is readily facilitated by lithography-based top-down fabrication of polysilicon nanowire (P-SiNW) arrays. However, free carrier trapping at the grain boundaries of polycrystalline materials drastically changes their properties. We present here transport measurements of P-SiNW array devices coupled with Kelvin probe force microscopy at different applied biases. By fitting the measured P-SiNW surface potential using electrostatic simulations, we extract the longitudinal dopant distribution along the nanowires as well as the density of grain boundaries interface states and their energy distribution within the band gap

Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire

Wafer-scale fabrication of semiconductor nanowire devices is readily facilitated by lithography-based top-down fabrication of polysilicon nanowire (P-SiNW) arrays. However, free carrier trapping at the grain boundaries of polycrystalline materials drastically changes their properties. We present here transport measurements of P-SiNW array devices coupled with Kelvin probe force microscopy at different applied biases. By fitting the measured P-SiNW surface potential using electrostatic simulations, we extract the longitudinal dopant distribution along the nanowires as well as the density of grain boundaries interface states and their energy distribution within the band gap