4,447 research outputs found

    Development of the dry tape battery concept Quarterly report no. 4, 9 Mar. - 9 Jun. 1966

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    Aqueous and nonqueous electrolytic actions, and energy density measurements for dry tape batter

    Development of the dry tape battery concept Quarterly report no. 3, 9 Dec. 1965 - 8 Mar. 1966

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    Material electrical and chemical properties tested for use in dry tape batterie

    Strong Pinning Enhancement in MgB2 Using Very Small Dy2O3 Additions

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    0.5 to 5.0 wt.% Dy2O3 was in-situ reacted with Mg + B to form pinned MgB2. While Tc remained largely unchanged, Jc was strongly enhanced. The best sample (only 0.5 wt.% Dy2O3) had a Jc of 6.5 x 10^5 A/cm^2 at 6K, 1T and 3.5 x 10^5 A/cm^2 at 20K, 1T, around a factor of 4 higher compared to the pure sample, and equivalent to hot-pressed or nano-Si added MgB2 at below 1T. Even distributions of nano-scale precipitates of DyB4 and MgO were observed within the grains. The room temperature resistivity decreased with Dy2O3 indicative of improved grain connectivity.Comment: 13 pages, 4 figures and 1 tabl

    Fast Dynamic Graph Algorithms for Parameterized Problems

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    Fully dynamic graph is a data structure that (1) supports edge insertions and deletions and (2) answers problem specific queries. The time complexity of (1) and (2) are referred to as the update time and the query time respectively. There are many researches on dynamic graphs whose update time and query time are o(G)o(|G|), that is, sublinear in the graph size. However, almost all such researches are for problems in P. In this paper, we investigate dynamic graphs for NP-hard problems exploiting the notion of fixed parameter tractability (FPT). We give dynamic graphs for Vertex Cover and Cluster Vertex Deletion parameterized by the solution size kk. These dynamic graphs achieve almost the best possible update time O(poly(k)logn)O(\mathrm{poly}(k)\log n) and the query time O(f(poly(k),k))O(f(\mathrm{poly}(k),k)), where f(n,k)f(n,k) is the time complexity of any static graph algorithm for the problems. We obtain these results by dynamically maintaining an approximate solution which can be used to construct a small problem kernel. Exploiting the dynamic graph for Cluster Vertex Deletion, as a corollary, we obtain a quasilinear-time (polynomial) kernelization algorithm for Cluster Vertex Deletion. Until now, only quadratic time kernelization algorithms are known for this problem. We also give a dynamic graph for Chromatic Number parameterized by the solution size of Cluster Vertex Deletion, and a dynamic graph for bounded-degree Feedback Vertex Set parameterized by the solution size. Assuming the parameter is a constant, each dynamic graph can be updated in O(logn)O(\log n) time and can compute a solution in O(1)O(1) time. These results are obtained by another approach.Comment: SWAT 2014 to appea

    Thin-Film Trilayer Manganate Junctions

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    Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La0.67_{0.67}Sr0.33_{0.33}MnO3_3% -SrTiO3_3-La0.67_{0.67} Sr0.33_{0.33}MnO3_3 trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.Comment: 20 pages, 14 figures. To appear in Phil. Trans. R. Soc. Lond. A vol.356 (1998

    Quantum Hall conductance of two-terminal graphene devices

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    Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped samples to be distinguished, including N-shaped distortions of quantum Hall plateaus and conductance peaks and dips at the charge neutrality point. Generally good agreement is found between measurement and theory. Possible origins of discrepancies are discussed

    Improved Current Densities in MgB2 By Liquid-Assisted Sintering

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    Polycrystalline MgB2 samples with GaN additions were prepared by reaction of Mg, B, and GaN powders. The presence of Ga leads to a low melting eutectic phase which allowed liquid phase sintering and produces plate-like grains. For low-level GaN additions (5% at. % or less), the critical transition temperature, Tc, remained unchanged and in 1T magnetic field, the critical current density, Jc was enhanced by a factor of 2 and 10, for temperatures of \~5K and 20K, respectively. The values obtained are approaching those of hot isostatically pressed samples.Comment: 12 pages, 1 table, 4 figures, accepted in Applied Physics Letter

    Normal state properties of high angle grain boundaries in (Y,Ca)Ba2Cu3O7-delta

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    By lithographically fabricating an optimised Wheatstone bridge geometry, we have been able to make accurate measurements of the resistance of grain boundaries in Y1-xCaxBa2Cu3O7-d between the superconducting transition temperature, Tc, and room temperature. Below Tc the normal state properties were assessed by applying sufficiently high currents. The behaviour of the grain boundary resistance versus temperature and of the conductance versus voltage are discussed in the framework charge transport through a tunnel barrier. The influence of misorientation angle, oxygen content, and calcium doping on the normal state properties is related to changes of the height and shape of the grain boundary potential barrier.Comment: 17 pages, 1 table, 5 figures, submitted to PR

    Angular dependent vortex pinning mechanisms in YBCO coated conductors and thin films

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    We present a comparative study of the angular dependent critical current density in YBa2Cu3O7 films deposited on IBAD MgO and on single crystal MgO and SrTiO3 substrates. We identify three angular regimes where pinning is dominated by different types of correlated and uncorrelated defects. We show that those regimes are present in all cases, indicating that the pinning mechanisms are the same, but their extension and characteristics are sample dependent, reflecting the quantitative differences in texture and defect density. In particular, the more defective nature of the films on IBAD turns into an advantage as it results in stronger vortex pinning, demonstrating that the critical current density of the films on single crystals is not an upper limit for the performance of the IBAD coated conductors.Comment: 14 pages, 3 figures. Submitted to AP
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