Development of the dry tape battery concept Quarterly report no. 4, 9 Mar. - 9 Jun. 1966

Aqueous and nonqueous electrolytic actions, and energy density measurements for dry tape batter

Development of the dry tape battery concept Quarterly report no. 3, 9 Dec. 1965 - 8 Mar. 1966

Material electrical and chemical properties tested for use in dry tape batterie

Strong Pinning Enhancement in MgB2 Using Very Small Dy2O3 Additions

0.5 to 5.0 wt.% Dy2O3 was in-situ reacted with Mg + B to form pinned MgB2. While Tc remained largely unchanged, Jc was strongly enhanced. The best sample (only 0.5 wt.% Dy2O3) had a Jc of 6.5 x 10^5 A/cm^2 at 6K, 1T and 3.5 x 10^5 A/cm^2 at 20K, 1T, around a factor of 4 higher compared to the pure sample, and equivalent to hot-pressed or nano-Si added MgB2 at below 1T. Even distributions of nano-scale precipitates of DyB4 and MgO were observed within the grains. The room temperature resistivity decreased with Dy2O3 indicative of improved grain connectivity.Comment: 13 pages, 4 figures and 1 tabl

Raising Bi-O bands above the Fermi energy level of hole-doped Bi2_2Sr2_2CaCu2_2O8+δ_{8+\delta} and other cuprate superconductors

The Fermi surface (FS) of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212) predicted by band theory displays Bi-related pockets around the $(\pi,0)$ point, which have never been observed experimentally. We show that when the effects of hole doping either by substituting Pb for Bi or by adding excess O in Bi2212 are included, the Bi-O bands are lifted above the Fermi energy ($E_F$) and the resulting first-principles FS is in remarkable accord with measurements. With decreasing hole-doping the Bi-O bands drop below $E_F$ and the system self-dopes below a critical hole concentration. Computations on other Bi- as well as Tl- and Hg-based compounds indicate that lifting of the cation-derived band with hole doping is a general property of the electronic structures of the cuprates.Comment: 4 pages, 4 figures; PRL (2006, in press

Improved Current Densities in MgB2 By Liquid-Assisted Sintering

Polycrystalline MgB2 samples with GaN additions were prepared by reaction of Mg, B, and GaN powders. The presence of Ga leads to a low melting eutectic phase which allowed liquid phase sintering and produces plate-like grains. For low-level GaN additions (5% at. % or less), the critical transition temperature, Tc, remained unchanged and in 1T magnetic field, the critical current density, Jc was enhanced by a factor of 2 and 10, for temperatures of \~5K and 20K, respectively. The values obtained are approaching those of hot isostatically pressed samples.Comment: 12 pages, 1 table, 4 figures, accepted in Applied Physics Letter

Thin-Film Trilayer Manganate Junctions

Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La$_{0.67}$Sr$_{0.33}$MnO$_3$% -SrTiO$_3$-La$_{0.67}$ Sr$_{0.33}$MnO$_3$ trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.Comment: 20 pages, 14 figures. To appear in Phil. Trans. R. Soc. Lond. A vol.356 (1998

Quantum Hall conductance of two-terminal graphene devices

Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped samples to be distinguished, including N-shaped distortions of quantum Hall plateaus and conductance peaks and dips at the charge neutrality point. Generally good agreement is found between measurement and theory. Possible origins of discrepancies are discussed

Normal state properties of high angle grain boundaries in (Y,Ca)Ba2Cu3O7-delta

By lithographically fabricating an optimised Wheatstone bridge geometry, we have been able to make accurate measurements of the resistance of grain boundaries in Y1-xCaxBa2Cu3O7-d between the superconducting transition temperature, Tc, and room temperature. Below Tc the normal state properties were assessed by applying sufficiently high currents. The behaviour of the grain boundary resistance versus temperature and of the conductance versus voltage are discussed in the framework charge transport through a tunnel barrier. The influence of misorientation angle, oxygen content, and calcium doping on the normal state properties is related to changes of the height and shape of the grain boundary potential barrier.Comment: 17 pages, 1 table, 5 figures, submitted to PR

Research and development of the dry tape battery concept Quarterly report, 9 Jun. - 9 Sep. 1966

Dry tape battery concept - cathode and anode research, energy densities, tape cell preparation, and supporting researc