Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility considerably. We show that it is possible to decouple the partially sp3-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp2-hybridized graphene layer with improved electronic properties.Comment: 7 pages, 4 figures, 1 tabl

Gilbert damping of CoFe-alloys

We report structural, magnetic and dynamic properties of polycrystalline coxfe1-x-alloy films on sapphire, silicon, and mgo substrates across the full composition range, by using a vector network analyser ferromagnetic resonance measurement technique (vna-fmr), superconducting quantum interference device magnetometry (squid) and x-ray diffraction (xrd). in the approximate vicinity of 28% co, we observe a minimum of the damping parameter, associated with a reduction in the density of states to a minimum value at the fermi energy level. for films on all substrates, we find magnetic damping of the order of 4-5 . 10(-3), showing that the substrate does not play a major role. using a post-annealing process, we report a decrease of the magnetic damping down to 3-4 . 10(-3). we find that the saturation magnetization depends approximately reciprocally on the damping parameter with varying alloy composition

Ser352 and Ser354 in the carboxyl terminus of the human P2Y1 receptor are required for agonist-promoted phosphorylation and internalization in MDCK cells: Phosphorylation and internalization of P2Y1 receptors

The P2Y1 receptor promotes chloride secretion in epithelial cells, a process critical for regulation of extracellular ion and fluid levels. Here we have examined the role of phosphorylation in agonist-induced internalization of P2Y1 receptors

An FBN1 Deep Intronic Variant Is Associated With Pseudoexon Formation and a Variable Marfan Phenotype in a Five Generation Family

Exome sequencing of genes associated with heritable thoracic aortic disease (HTAD) failed to identify a pathogenic variant in a large family with Marfan syndrome (MFS). A genome-wide linkage analysis for thoracic aortic disease identified a peak at 15q21.1, and genome sequencing identified a novel deep intronic FBN1 variant that segregated with thoracic aortic disease in the family (LOD score 2.7) and was predicted to alter splicing. RT-PCR and bulk RNA sequencing of RNA harvested from fibroblasts explanted from the affected proband revealed an insertion of a pseudoexon between exons 13 and 14 of the FBN1 transcript, predicted to lead to nonsense mediated decay (NMD). Treating the fibroblasts with an NMD inhibitor, cycloheximide, greatly improved the detection of the pseudoexon-containing transcript. Family members with the FBN1 variant had later onset aortic events and fewer MFS systemic features than typical for individuals with haploinsufficiency of FBN1. Variable penetrance of the phenotype and negative genetic testing in MFS families should raise the possibility of deep intronic FBN1 variants and the need for additional molecular studies

Crystalline silicon solar cells with thin poly-SiO_x carrier-selective passivating contacts for perovskite/c-Si tandem applications

Single junction crystalline silicon (c-Si) solar cells are reaching their practical efficiency limit whereas perovskite/c-Si tandem solar cells have achieved efficiencies above the theoretical limit of single junction c-Si solar cells. Next to low-thermal budget silicon heterojunction architecture, high-thermal budget carrier-selective passivating contacts (CSPCs) based on polycrystalline-SiOx (poly-SiOx) also constitute a promising architecture for high efficiency perovskite/c-Si tandem solar cells. In this work, we present the development of c-Si bottom cells based on high temperature poly-SiOx CSPCs and demonstrate novel high efficiency four-terminal (4T) and two-terminal (2T) perovskite/c-Si tandem solar cells. First, we tuned the ultra-thin, thermally grown SiOx. Then we optimized the passivation properties of p-type and n-type doped poly-SiOx CSPCs. Here, we have optimized the p-type doped poly-SiOx CSPC on textured interfaces via a two-step annealing process. Finally, we integrated such bottom solar cells in both 4T and 2T tandems, achieving 28.1% and 23.2% conversion efficiency, respectively.</p

Measurement of the proton form factor by studying e+e−→ppˉe^{+} e^{-}\rightarrow p\bar{p}

Using data samples collected with the BESIII detector at the BEPCII collider, we measure the Born cross section of $e^{+}e^{-}\rightarrow p\bar{p}$ at 12 center-of-mass energies from 2232.4 to 3671.0 MeV. The corresponding effective electromagnetic form factor of the proton is deduced under the assumption that the electric and magnetic form factors are equal $(|G_{E}|= |G_{M}|)$. In addition, the ratio of electric to magnetic form factors, $|G_{E}/G_{M}|$, and $|G_{M}|$ are extracted by fitting the polar angle distribution of the proton for the data samples with larger statistics, namely at $\sqrt{s}=$ 2232.4 and 2400.0 MeV and a combined sample at $\sqrt{s}$ = 3050.0, 3060.0 and 3080.0 MeV, respectively. The measured cross sections are in agreement with recent results from BaBar, improving the overall uncertainty by about 30\%. The $|G_{E}/G_{M}|$ ratios are close to unity and consistent with BaBar results in the same $q^{2}$ region, which indicates the data are consistent with the assumption that $|G_{E}|=|G_{M}|$ within uncertainties.Comment: 13 pages, 24 figure

Confirmation of a charged charmoniumlike state Zc(3885)∓Z_c(3885)^{\mp} in e+e−→π±(DDˉ∗)∓e^+e^-\to\pi^{\pm}(D\bar{D}^*)^\mp with double DD tag

We present a study of the process $e^+e^-\to\pi^{\pm}(D\bar{D}^*)^{\mp}$ using data samples of 1092~pb$^{-1}$ at $\sqrt{s}=4.23$~GeV and 826~pb$^{-1}$ at $\sqrt{s}=4.26$~GeV collected with the BESIII detector at the BEPCII storage ring. With full reconstruction of the $D$ meson pair and the bachelor $\pi^{\pm}$ in the final state, we confirm the existence of the charged structure $Z_c(3885)^{\mp}$ in the $(D\bar{D}^*)^{\mp}$ system in the two isospin processes $e^+e^-\to\pi^+D^0D^{*-}$ and $e^+e^-\to\pi^+D^-D^{*0}$. By performing a simultaneous fit, the statistical significance of $Zc(3885)^{\mp}$ signal is determined to be greater than 10$\sigma$, and its pole mass and width are measured to be $M_{\rm{pole}}$=(3881.7$\pm$1.6(stat.)$\pm$1.6(syst.))~MeV/$c^2$ and $\Gamma_{\rm{pole}}$=(26.6$\pm$2.0(stat.)$\pm$2.1(syst.))~MeV, respectively. The Born cross section times the $(D\bar{D}^*)^{\mp}$ branching fraction ($\sigma(e^+e^-\to\pi^{\pm}Z_{c}(3885)^{\mp}) \times Br(Z_{c}(3885)^{\mp}\to(D\bar{D}^*)^{\mp})$) is measured to be $(141.6\pm7.9(\text{stat.})\pm12.3(\text{syst.}))~\text{pb}$ at $\sqrt{s}=4.23$~GeV and $(108.4\pm6.9(\text{stat.})\pm8.8(\text{syst.}))~\text{pb}$ at $\sqrt{s}=4.26$~GeV. The polar angular distribution of the $\pi^{\pm}$-$Z_c(3885)^{\mp}$ system is consistent with the expectation of a quantum number assignment of $J^P=1^+$ for $Z_c(3885)^{\mp}$

Measurement of the e+e−→ηJ/ψe^{+}e^{-} \to \eta J/\psi cross section and search for e+e−→π0J/ψe^{+}e^{-} \to \pi^{0} J/\psi at center-of-mass energies between 3.810 and 4.600~GeV

Using data samples collected with the BESIII detector operating at the BEPCII collider at center-of-mass energies from 3.810 to 4.600 GeV, we perform a study of $e^{+}e^{-} \to \eta J/\psi$ and $\pi^0 J/\psi$. Statistically significant signals of $e^{+}e^{-} \to \eta J/\psi$ are observed at $\sqrt{s}$ = 4.190, 4.210, 4.220, 4.230, 4.245, 4.260, 4.360 and 4.420 GeV, while no signals of $e^{+}e^{-} \to \pi^{0} J/\psi$ are observed. The measured energy-dependent Born cross section for $e^{+}e^{-} \to \eta J/\psi$ shows an enhancement around 4.2~GeV. The measurement is compatible with an earlier measurement by Belle, but with a significantly improved precision

An amplitude analysis of the π0π0\pi^{0}\pi^{0} system produced in radiative J/ψJ/\psi decays

An amplitude analysis of the $\pi^{0}\pi^{0}$ system produced in radiative $J/\psi$ decays is presented. In particular, a piecewise function that describes the dynamics of the $\pi^{0}\pi^{0}$ system is determined as a function of $M_{\pi^{0}\pi^{0}}$ from an analysis of the $(1.311\pm0.011)\times10^{9}$ $J/\psi$ decays collected by the BESIII detector. The goal of this analysis is to provide a description of the scalar and tensor components of the $\pi^0\pi^0$ system while making minimal assumptions about the properties or number of poles in the amplitude. Such a model-independent description allows one to integrate these results with other related results from complementary reactions in the development of phenomenological models, which can then be used to directly fit experimental data to obtain parameters of interest. The branching fraction of $J/\psi \to \gamma \pi^{0}\pi^{0}$ is determined to be $(1.15\pm0.05)\times10^{-3}$, where the uncertainty is systematic only and the statistical uncertainty is negligible.Comment: Submitted to Phys. Rev. D 19 pages, 4 figure

Observation of the isospin-violating decay J/ψ→ϕπ0f0(980)J/\psi \to \phi\pi^{0}f_{0}(980)

Using a sample of 1.31 billion $J/\psi$ events collected with the BESIII detector at the BEPCII collider, the decays $J/\psi \to \phi \pi^{+}\pi^{-}\pi^{0}$ and $J/\psi \to \phi \pi^{0}\pi^{0}\pi^{0}$ are investigated. The isospin violating decay $J/\psi \to \phi \pi^{0} f_{0}(980)$ with $f_{0}(980) \to \pi\pi$, is observed for the first time. The width of the $f_{0}(980)$ obtained from the dipion mass spectrum is found to be much smaller than the world average value. In the $\pi^{0} f_{0}(980)$ mass spectrum, there is evidence of $f_1(1285)$ production. By studying the decay $J/\psi \to \phi\eta'$, the branching fractions of $\eta' \to \pi^{+}\pi^{-}\pi^{0}$ and $\eta' \to \pi^{0}\pi^{0}\pi^{0}$, as well as their ratio, are also measured.Comment: 10 pages, 10 figures, published in Phys. Rev.