A study of temperature-related non-linearity at the metal-silicon interface

In this paper, we investigate the temperature dependencies of metal-semiconductor interfaces in an effort to better reproduce the current-voltage-temperature (IVT) characteristics of any Schottky diode, regardless of homogeneity. Four silicon Schottky diodes were fabricated for this work, each displaying different degrees of inhomogeneity; a relatively homogeneous NiV/Si diode, a Ti/Si and Cr/Si diode with double bumps at only the lowest temperatures, and a Nb/Si diode displaying extensive non-linearity. The 77–300 K IVT responses are modelled using a semi-automated implementation of Tung's electron transport model, and each of the diodes are well reproduced. However, in achieving this, it is revealed that each of the three key fitting parameters within the model display a significant temperature dependency. In analysing these dependencies, we reveal how a rise in thermal energy “activates” exponentially more interfacial patches, the activation rate being dependent on the carrier concentration at the patch saddle point (the patch's maximum barrier height), which in turn is linked to the relative homogeneity of each diode. Finally, in a review of Tung's model, problems in the divergence of the current paths at low temperature are explained to be inherent due to the simplification of an interface that will contain competing defects and inhomogeneities

Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopy

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)We present a low-temperature (73 K) study of the optical properties of multi-layer type II InP/GaAs self-assembled quantum dots by means of surface photovoltage (SPV) spectroscopy, taking advantage of its high sensitivity and contactless nature. The samples contain 10 periods of InP quantum dot planes separated by 5 nm GaAs spacers. The SPV amplitude spectra reveal two major broad peaks, situated at low and high energies, respectively. These features are analyzed taking into account the type II character of the structure, the quantum coupling effects, the spectral behavior of the SPV phase, and the photoluminescence spectra. As a result they have been attributed to optical transitions in the quantum dots and the wetting layers, respectively. The main mechanism for carrier separation in the SPV generation process is clarified via the analysis of the SPV phase spectra. The influence of the substrate absorption on the SPV spectra is discussed in details. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638705]1106Bulgarian National Science Fund [D01-463/12.7.06]Alexander von Humboldt FoundationCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Bulgarian National Science Fund [D01-463/12.7.06

Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering

The efficiency of a solar cell can be substantially increased by opening new energy gaps within the semiconductor band gap. This creates additional optical absorption pathways which can be fully exploited under concentrated sunlight. Here we report a new approach to opening a sizeable energy gap in a single junction GaAs solar cell using an array of small InAs QDs that leads directly to high device open circuit voltage. High resolution imaging of individual QDs provides experimentally obtained dimensions to a quantum mechanical model which can be used to design an optimised QD array. This is then implemented by precisely engineering the shape and size of the QDs resulting in a total area (active area) efficiency of 18.3% (19.7%) at 5 suns concentration. The work demonstrates that only the inclusion of an appropriately designed QD array in a solar cell has the potential to result in ultra-high efficiency under concentration

Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys

We present a study of melt grown dilute nitride InGaAsN layers by x-ray photoelectron spectroscopy (XPS), Raman and photoluminescence (PL) spectroscopy. The purpose of the study is to determine the degree of atomic ordering in the quaternary alloy during the epitaxial growth at near thermodynamic equilibrium conditions and its influence on band gap formation. Despite the low In concentration (~3%) the XPS data show a strong preference toward In–N bonding configuration in the InGaAsN samples. Raman spectra reveal that most of the N atoms are bonded to In instead of Ga atoms and the formation of N-centred In3Ga1 clusters. PL measurements reveal smaller optical band gap bowing as compared to the theoretical predictions for random alloy and localised tail states near the conduction band minimum

Average and extreme multi-atom Van der Waals interactions: Strong coupling of multi-atom Van der Waals interactions with covalent bonding

<p>Abstract</p> <p>Background</p> <p>The prediction of ligand binding or protein structure requires very accurate force field potentials – even small errors in force field potentials can make a 'wrong' structure (from the billions possible) more stable than the single, 'correct' one. However, despite huge efforts to optimize them, currently-used all-atom force fields are still not able, in a vast majority of cases, even to keep a protein molecule in its native conformation in the course of molecular dynamics simulations or to bring an approximate, homology-based model of protein structure closer to its native conformation.</p> <p>Results</p> <p>A strict analysis shows that a specific coupling of multi-atom Van der Waals interactions with covalent bonding can, in extreme cases, increase (or decrease) the interaction energy by about 20–40% at certain angles between the direction of interaction and the covalent bond. It is also shown that on average multi-body effects decrease the total Van der Waals energy in proportion to the square root of the electronic component of dielectric permittivity corresponding to dipole-dipole interactions at small distances, where Van der Waals interactions take place.</p> <p>Conclusion</p> <p>The study shows that currently-ignored multi-atom Van der Waals interactions can, in certain instances, lead to significant energy effects, comparable to those caused by the replacement of atoms (for instance, C by N) in conventional pairwise Van der Waals interactions.</p

Photochemical Charge Separation in Poly(3-hexylthiophene) (P3HT) Films Observed with Surface Photovoltage Spectroscopy

Surface photovoltage spectroscopy (SPS) was used to probe photon induced charge separation in thin films of regioregular and regiorandom poly(3-hexylthiophene) (P3HT) as a function of excitation energy. Both positive and negative photovoltage signals were observed under sub-band-gap (&lt;2.0 eV) and super-band-gap (&gt;2.0 eV) excitation of the polymer. The dependence of the spectra on substrate work function, thermal annealing, film thickness, and illumination intensity was investigated, allowing the identification of interface, charge transfer (CT), and band-gap states in the amorphous and crystalline regions of the polymer films. The ability to probe these states in polymer films will aid the development and optimization of organic electronic devices such as photovoltaics (OPVs), light-emitting diodes (OLEDs), and field effect transistors (OFETs). The direction and size of the observed photovoltage features can be explained using the depleted semiconductor model. © 2013 American Chemical Society