Enhancing sub-bandgap external quantum efficiency by photomultiplication for narrowband organic near-infrared photodetectors

Detection of electromagnetic signals for applications such as health, product quality monitoring or astronomy requires highly responsive and wavelength selective devices. Photomultiplication-type organic photodetectors have been shown to achieve high quantum efficiencies mainly in the visible range. Much less research has been focused on realizing near-infrared narrowband devices. Here, we demonstrate fully vacuum-processed narrow- and broadband photomultiplication-type organic photodetectors. Devices are based on enhanced hole injection leading to a maximum external quantum efficiency of almost 2000% at −10 V for the broadband device. The photomultiplicative effect is also observed in the charge-transfer state absorption region. By making use of an optical cavity device architecture, we enhance the charge-transfer response and demonstrate a wavelength tunable narrowband photomultiplication-type organic photodetector with external quantum efficiencies superior to those of pin-devices. The presented concept can further improve the performance of photodetectors based on the absorption of charge-transfer states, which were so far limited by the low external quantum efficiency provided by these devices

Deep level transient spectroscopy (DLTS) study of P3HT:PCBM organic solar cells

The electronic structure of an organic photovoltaic bulk heterojunction cell strongly deviates from the typical textbook examples of a single sided junction used to explain electrical characterization of defects in semiconductors. Therefore it is not so straightforward to assign the capacitance of this device or the charge in it to the presence of a depleted layer within this structure. However, conventional electronic spectroscopic techniques could give useful information to understand the electronic behaviour of the device. Therefore, in this work capacitance and charge DLTS have been performed on P3HT:PCBM solar cells. To avoid this parasitic effects low frequency capacitance DLTS (20 kHz) has been performed, showing an anomalous signal with negative amplitude and a complementary positive signal could be observed altering the biases. Charge DLTS clearly revealed that both signals transients, conventional and with altered bias have the same time constants. A recent study has shown that such behaviour cannot be explained by the thermodynamic properties of capture and emission of carriers by a defect in bulk semiconductor. The validity of alternative explanations, including interface states, non-ideal ohmic contacts and effects of carrier hopping on charge mobility, will be discussed

Strong light-matter coupling for reduced photon energy losses in organic photovoltaics

Funding: Volkswagen Foundation (no.93404) (MCG), individual fellowship of the DeutscheForschungsgemeinschaft (404587082) (AM).Strong light-matter coupling can re-arrange the exciton energies in organic semiconductors. Here, we exploit strong coupling by embedding a fullerene-free organic solar cell (OSC) photo-active layer into an optical microcavity, leading to the formation of polariton peaks and a red-shift of the optical gap. At the same time, the open-circuit voltage of the device remains unaffected. This leads to reduced photon energy losses for the low-energy polaritons and a steepening of the absorption edge. While strong coupling reduces the optical gap, the energy of the charge-transfer state is not affected for large driving force donor-acceptor systems. Interestingly, this implies that strong coupling can be exploited in OSCs to reduce the driving force for electron transfer, without chemical or microstructural modifications of the photo-active layer. Our work demonstrates that the processes determining voltage losses in OSCs can now be tuned, and reduced to unprecedented values, simply by manipulating the device architecture.Publisher PDFPeer reviewe

Sb₂Se₃ Polycrystalline Thin Films Grown on Different Window Layers

Sb2Se3 is a typical V2VI3 binary chalcogenide compound characterized by a single crystalline phase and a fixed composition. Sb2Se3 displays a narrow energy gap ranging from 1.1 to 1.3 eV, which are quite optimal values for single-junction solar cells. Earth-abundant and non-toxic components make this material a good candidate for low-cost thin-film solar cells. In substrate configuration, a world record efficiency of 9.2% was recently obtained. Sb2Se3 thin films exhibit an accentuated predisposition to form (Sb4Se6)n ribbons along the [001] direction. This anisotropy heavily influences the charge transport of the photogenerated carriers. In this work, structural characterization of the Sb2Se3 films showed that the crystalline quality and preferential orientation are strongly dependent on the window layer used. To better understand the growth mechanism, Sb2Se3 thin films were deposited by close-spaced sublimation on five different window layers, such as CdS, CdS:F, CdSe, As2S3, and ZnCdS. Sb2Se3-based solar cells, realized in superstrate configuration on these different substrates, evidently demonstrate the influence of the Sb2Se3 preferential orientation on the photovoltaic parameters

Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers

Sb2Se3 is a typical V2VI3 binary chalcogenide compound characterized by a single crystalline phase and a fixed composition. Sb2Se3 displays a narrow energy gap ranging from 1.1 to 1.3 eV, which are quite optimal values for single-junction solar cells. Earth-abundant and non-toxic components make this material a good candidate for low-cost thin-film solar cells. In substrate configuration, a world record efficiency of 9.2% was recently obtained. Sb2Se3 thin films exhibit an accentuated predisposition to form (Sb4Se6)n ribbons along the [001] direction. This anisotropy heavily influences the charge transport of the photogenerated carriers. In this work, structural characterization of the Sb2Se3 films showed that the crystalline quality and preferential orientation are strongly dependent on the window layer used. To better understand the growth mechanism, Sb2Se3 thin films were deposited by close-spaced sublimation on five different window layers, such as CdS, CdS:F, CdSe, As2S3, and ZnCdS. Sb2Se3-based solar cells, realized in superstrate configuration on these different substrates, evidently demonstrate the influence of the Sb2Se3 preferential orientation on the photovoltaic parameters