Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves

Results of a determination of strain perpendicular to the surface and of the damage in (100) Si single crystals irradiated by 250-keV Ar+ ions at 77 K are presented. Double-crystal x-ray diffraction and dynamical x-ray diffraction theory are used. Trial strain and damage distributions were guided by transmission electron microscope observations and Monte Carlo simulation of ion energy deposition. The perpendicular strain and damage profiles, determined after sequentially removing thin layers of Ar+-implanted Si, were shown to be self-consistent, proving the uniqueness of the deconvolution. Agreement between calculated and experimental rocking curves is obtained with strain and damage distributions which closely follow the shape of the trim simulations from the maximum damage to the end of the ion range but fall off more rapidly than the simulation curve near the surface. Comparison of the trim simulation and the strain profile of Ar+-implanted Si reveals the importance of annealing during and after implantation and the role of complex defects in the final residual strain distribution

Surface-micromachined Ta–Si–N beams for use in micromechanics

Realization and characterization of free-standing surface-microstructures based on Ta-Si-N films are presented. Due to their significant physical and chemical properties, such ternary films are promising candidates for application in microelectromechanical devices

X-Ray Diffraction Determination of Stresses in Thin Films

This paper presents the methodology employed in the determination of the stress tensor for thin crystalline films using x-ray rocking curves. Use of the same equipment for the determination of the average stress in poly- or non-crystalline thin films attached to a crystalline substrate is also discussed. In this case the lattice curvature of the substrate is determined by measurement of the shift In the Bragg peak with lateral position in the substrate. Strains in single crystal layers may be measured using Bragg diffraction from the layers and from the substrate or a reference crystal, with the highest strain sensitivity of any known technique. The difference in Bragg angles for a strained and an unstrained crystal is related to the change in d spacing of the Bragg planes, and the elastic strain is related to this angular difference. The separation of two peaks on an x-ray rocking curve is generally not equal to the difference in Bragg angles of two diffracting crystals, so diffractometer measurements must be carefully Interpreted in order to obtain x-ray strains in crystalline films (x-ray strains are strains relative to the reference crystal). The unstrained d spacings of the film and the d spacings of the reference crystal must be known to obtain the elastic strains in the film, from which the stress tensor is determined

Properties of InGaN deposited on Glass at Low Temperature

We have investigated the properties of InGaN grown at low temperature on glass substrates by a plasma enhanced MBE process. The goal of this study was to evaluate the potential of InGaN as an oxide-free, transparent conductor material which could be deposited at or slightly above room temperature with minimal interaction or damage to the underlying material. InxGa1−xN films deposited on glass, even without substrate heating, are highly crystalline, but the crystallinity as measured by x-ray degrades at x 0.5) is conductive due to its high electron concentration. InN electron Hall mobilities > 20 cm2/Vs when grown at 400°C, and ~ 7 cm2/Vs on unheated substrates were obtained. The addition of GaN degraded the electrical properties of the films to a greater extent than it improved the transparency. As a result, the best transparent conductor films were pure InN which, when deposited at 400°C, were half as transparent in the green as an indium tin oxide film having the same sheet resistanc

Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure

We investigated the properties of ion-implanted GaN:Zn annealed under various conditions using photoluminescence (PL) and high resolution x-ray diffraction (HRXRD). Epitaxial GaN/sapphire of high optical quality was ion-implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV. The sample was capped with 200 Å of SiNx and then diced into numerous pieces which were annealed under varied conditions in an attempt to optically activate the Zn. Annealing was performed in a tube furnace under flowing N2, an atmospheric pressure MOCVD reactor under flowing NH3 or N2, and under an N2 overpressure of 190 atm. The observed improvement in the optical quality of GaN:Zn annealed under N2 overpressure yields further insights into the trade-off between defect annealing and N loss from the GaN crysta

Thermodynamic Studies on Non Centrosymmetric Superconductors by AC Calorimetry under High Pressures

We investigated the non centrosymmetric superconductors CePt$_3$Si and UIr by the ac heat capacity measurement under pressures. We determined the pressure phase diagrams of these compounds. In CePt$_3$Si, the N\'{e}el temperature $T_{\rm N}$ = 2.2 K decreases with increasing pressure and becomes zero at the critical pressure $P_{\rm AF}$ $\simeq$ 0.6 GPa. On the other hand, the superconducting phase exists in a wider pressure region from ambient pressure to $P_{\rm AF}$ $\simeq$ 1.5 GPa. The phase diagram of CePt$_3$Si is very unique and has never been reported before for other heavy fermion superconductors. In UIr, the heat capacity shows an anomaly at the Curie temperature $T_{\rm C1}$ = 46 K at ambient pressure, and the heat capacity anomaly shifts to lower temperatures with increasing pressure. The present pressure dependence of $T_{\rm C1}$ was consistent with the previous studies by the resistivity and magnetization measurements. Previous ac magnetic susceptibility and resistivity measurements suggested the existence of three ferromagnetic phases, FM1-3. $C_{\rm ac}$ shows a bending structure at 1.98, 2.21, and 2.40 GPa .The temperatures where these anomalies are observed are close to the phase boundary of the FM3 phase.Comment: This paper was presented at the international workshop ``Novel Pressure-induced Phenomena in Condensed Matter Systems(NP2CMS)" August 26-29 2006, Fukuoka Japa

New approach for time-resolved and dynamic investigations on nanoparticles agglomeration

Nanoparticle (NP) colloidal stability plays a crucial role in biomedical application not only for human and environmental safety but also for NP efficiency and functionality. NP agglomeration is considered as a possible process in monodispersed NP colloidal solutions, which drastically affects colloidal stability. This process is triggered by changes in the physicochemical properties of the surrounding media, such as ionic strength (IS), pH value, or presence of biomolecules. Despite different available characterization methods for nanoparticles (NPs), there is a lack of information about the underlying mechanisms at the early stage of dynamic behaviors, namely changing in NP size distribution and structure while placing them from a stable colloidal solution to a new media like biological fluids. In this study, an advanced in situ approach is presented that combines small angle X-ray scattering (SAXS) and microfluidics, allowing label-free, direct, time-resolved, and dynamic observations of the early stage of NP interaction/agglomeration initiated by environmental changes. It is shown for silica NPs that the presence of protein in the media enormously accelerates the NP agglomeration process compared to respective changes in IS and pH. High IS results in a staring agglomeration process after 40 min, though, in case of protein presence in media, this time decreased enormously to 48 s. These time scales show that this method is sensitive and precise in depicting the dynamics of fast and slow NP interactions in colloidal conditions and therefore supports understanding the colloidal stability of NPs in various media concluding in safe and efficient NP designing for various applications

Electromagnetic levitation containerless processing of metallic materials in microgravity: thermophysical properties

Transitions from the liquid to the solid state of matter are omnipresent. They form a crucial step in the industrial solidification of metallic alloy melts and are greatly influenced by the thermophysical properties of the melt. Knowledge of the thermophysical properties of liquid metallic alloys is necessary in order to gain a tight control over the solidification pathway, and over the obtained material structure of the solid. Measurements of thermophysical properties on ground are often difficult, or even impossible, since liquids are strongly influenced by earth’s gravity. Another problem is the reactivity of melts with container materials, especially at high temperature. Finally, deep undercooling, necessary to understand nucleus formation and equilibrium as well as nonequilibrium solidification, can only be achieved in a containerless environment. Containerless experiments in microgravity allow precise benchmark measurements of thermophysical properties. The electromagnetic levitator ISS-EML on the International Space Station (ISS) offers perfect conditions for such experiments. This way, data for process simulations is obtained, and a deeper understanding of nucleation, crystal growth, microstructural evolution, and other details of the transformation from liquid to solid can be gained. Here, we address the scientific questions in detail, show highlights of recent achievements, and give an outlook on future work